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Tunneling magnetoresistance and electron spin resonance study on Co–Al–O granular films

Journal of magnetism and magnetic materials, 2002-02, Vol.239 (1), p.154-156

2002

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Structural, thermal and magnetic properties of Y2Fe2Si2C

Journal of alloys and compounds, 2019-03, Vol.778, p.618-624

2019

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Inherited neuromyotonia as a phenotypic variation associated with a new mutation in the KCNQ2 gene

Journal of the neurological sciences, 2017-10, Vol.381, p.154-154

2017

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Longitudinal pulmonary function testing outcome measures in Duchenne muscular dystrophy: Long-term natural history with and without glucocorticoids

Neuromuscular disorders : NMD, 2018-11, Vol.28 (11), p.897-909

2018

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Factors Influencing Pediatric Outpatient Transthoracic Echocardiography Utilization Before Appropriate Use Criteria Release: A Multicenter Study

Journal of the American Society of Echocardiography, 2017-12, Vol.30 (12), p.1225-1233

2017

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INFLUENCE OF PATIENT FACTORS ON UTILIZATION OF INITIAL OUTPATIENT PEDIATRIC ECHOCARDIOGRAPHY

Journal of the American College of Cardiology, 2016-04, Vol.67 (13), p.1007-1007

2016

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Effect of growth conditions on the GaN thin film by sputtering deposition

Journal of crystal growth, 2007-02, Vol.299 (2), p.268-271

2007

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Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Applied surface science, 2006-01, Vol.252 (6), p.2153-2158

2006

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Association analyses of 47,500 individuals identifies six fracture loci and 82 BMD loci clustering in biological pathways that regulate osteoblast and osteoclast activity

Bone (New York, N.Y.), 2011-05, Vol.48, p.S69-S69

2011

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Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

Journal of crystal growth, 2006-08, Vol.293 (2), p.258-262

2006

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Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er

Journal of crystal growth, 2003-06, Vol.253 (1-4), p.10-15

2003

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Deep level and photoluminescence studies of Er-implanted GaN films

Journal of luminescence, 2007, Vol.122, p.365-367

2007

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Dependence of implantation-induced damage with photoluminescence intensity in GaN:Er

Journal of crystal growth, 2004-04, Vol.265 (1), p.78-82

2004

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Structure and photoluminescence studies of Pr-implanted GaN

Journal of crystal growth, 2004-07, Vol.267 (3), p.400-404

2004

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Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN

Journal of applied physics, 2004-11, Vol.96 (9), p.4930-4934

2004

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Photoluminescence from Er-doped Si-in-SiNx thin films

Optical materials, 2007-04, Vol.29 (8), p.1071-1074

2007

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The Basque country declaration: Gerontechnology comments

Gerontechnology, 2013-03, Vol.11 (4)

2013

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Incidence of complications after temperature-controlled radiofrequency treatment for sleep-disordered breathing: a Singapore sleep centre experience

Journal of laryngology and otology, 2008-05, Vol.122 (5), p.490-494

2008

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A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-μm CMOS technology

IEEE electron device letters, 2005-09, Vol.26 (9), p.634-636

2005

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Functionalization of benzylic carbon-hydrogen bonds. Mechanism and scope of the catalytic synthesis of indoles with [Ru(dmpe)2]

Organometallics, 1994-01, Vol.13 (1), p.385-396

1994

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Study of infrared luminescence from Er-implanted GaN films

Journal of crystal growth, 2004-08, Vol.268 (3), p.466-469

2004

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Photoluminesfcence of Er-doped SiO 2 films containing Si nanocrystals and Er

Journal of crystal growth, 2003, Vol.253 (1), p.10-15

2003

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A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-[micro]m CMOS technology

IEEE electron device letters, 2005-09, Vol.26 (9), p.634

2005

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A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology

IEEE electron device letters, 2005-09, Vol.26 (9), p.634-636

2005

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Microstructure studies ofPdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

Applied surface science, 1996-07, Vol.100, p.530-533

1996

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Tunneling magnetoresistance and electron spin resonance study on Co–Al–O granular films

Structural, thermal and magnetic properties of Y2Fe2Si2C

Inherited neuromyotonia as a phenotypic variation associated with a new mutation in the KCNQ2 gene

Longitudinal pulmonary function testing outcome measures in Duchenne muscular dystrophy: Long-term natural history with and without glucocorticoids

Factors Influencing Pediatric Outpatient Transthoracic Echocardiography Utilization Before Appropriate Use Criteria Release: A Multicenter Study

INFLUENCE OF PATIENT FACTORS ON UTILIZATION OF INITIAL OUTPATIENT PEDIATRIC ECHOCARDIOGRAPHY

Effect of growth conditions on the GaN thin film by sputtering deposition

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Association analyses of 47,500 individuals identifies six fracture loci and 82 BMD loci clustering in biological pathways that regulate osteoblast and osteoclast activity

Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er

Deep level and photoluminescence studies of Er-implanted GaN films

Dependence of implantation-induced damage with photoluminescence intensity in GaN:Er

Structure and photoluminescence studies of Pr-implanted GaN

Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN

Photoluminescence from Er-doped Si-in-SiNx thin films

The Basque country declaration: Gerontechnology comments

Incidence of complications after temperature-controlled radiofrequency treatment for sleep-disordered breathing: a Singapore sleep centre experience

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-μm CMOS technology

Functionalization of benzylic carbon-hydrogen bonds. Mechanism and scope of the catalytic synthesis of indoles with [Ru(dmpe)2]

Study of infrared luminescence from Er-implanted GaN films

Photoluminesfcence of Er-doped SiO 2 films containing Si nanocrystals and Er

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-[micro]m CMOS technology

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology

Microstructure studies ofPdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

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