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Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits

ACS nano, 2014-08, Vol.8 (8), p.7663-7670

2014

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Transmission Lines-Based Impedance Matching Technique for Broadband Rectifier

IEEE access, 2021-01, Vol.9, p.4665-4672

2021

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Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

ACS applied materials & interfaces, 2019-02, Vol.11 (6), p.6336-6343

2019

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A Multi-ESD-Path Low-Noise Amplifier With a 4.3-A TLP Current Level in 65-nm CMOS

IEEE transactions on microwave theory and techniques, 2010-12, Vol.58 (12), p.4004-4011

2010

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CMOS Distributed Amplifiers Using Gate-Drain Transformer Feedback Technique

IEEE transactions on microwave theory and techniques, 2013-08, Vol.61 (8), p.2901-2910

2013

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High-Power Wire Bonded GaN Rectifier for Wireless Power Transmission

IEEE access, 2020, Vol.8, p.82035-82041

2020

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Electro-Static Discharge Protection Design for V-Band Low-Noise Amplifier Using Radio Frequency Junction Varactor

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CE09-04CE09-6

2013

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AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio

IEEE electron device letters, 2010-02, Vol.31 (2), p.102-104

2010

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An Inductorless 20-Gbaud Overshoot Suppression Modulator Driver Using Interleave Frequency Variant Feedback in 90-nm CMOS

IEEE transactions on microwave theory and techniques, 2023-03, Vol.71 (3), p.1-11

2023

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An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS

IEEE microwave and wireless components letters, 2012-04, Vol.22 (4), p.197-199

2012

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A 10-Gb/s Low Jitter Single-Loop Clock and Data Recovery Circuit With Rotational Phase Frequency Detector

IEEE transactions on circuits and systems. I, Regular papers, 2014-11, Vol.61 (11), p.3278-3287

2014

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A 76.2-89.1 GHz Phase-Locked Loop With 15.6% Tuning Range in 90 nm CMOS for W-Band Applications

IEEE microwave and wireless components letters, 2015-08, Vol.25 (8), p.538-540

2015

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A Compact V-Band Bandpass Filter in IPD Technology

IEEE microwave and wireless components letters, 2011-10, Vol.21 (10), p.531-533

2011

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A Miniature 300-MHz Resonant DC-DC Converter With GaN and CMOS Integrated in IPD Technology

IEEE transactions on power electronics, 2018-11, Vol.33 (11), p.9656-9668

2018

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Second Harmonic Exploitation for High-Efficiency Wireless Power Transfer Using Duplexing Rectenna

IEEE transactions on microwave theory and techniques, 2021-01, Vol.69 (1), p.482-494

2021

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A 17.5-26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

IEEE microwave and wireless components letters, 2012-09, Vol.22 (9), p.483-485

2012

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Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications

IEEE transactions on microwave theory and techniques, 2018-12, Vol.66 (12), p.5676-5684

2018

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Ultracompact Inductorless Noise-Canceling LNAs in 40-nm CMOS Achieving 2.2-K Noise Temperature for Qubit Readout

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2168-2178

2024

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A 40-Gb/s Modulator Driver Using Cascade Swing Compensation in 90 nm CMOS

IEEE microwave and wireless components letters, 2022-09, Vol.32 (9), p.1103-1106

2022

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ESD-Protected K-Band Low-Noise Amplifiers Using RF Junction Varactors in 65-nm CMOS

IEEE transactions on microwave theory and techniques, 2011-12, Vol.59 (12), p.3455-3462

2011

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A 24 GHz Low-Noise Amplifier Using RF Junction Varactors for Noise Optimization and CDM ESD Protection in 90 nm CMOS

IEEE microwave and wireless components letters, 2011-07, Vol.21 (7), p.374-376

2011

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2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga's Figure-of-Merit

IEEE electron device letters, 2016-01, Vol.37 (1), p.70-73

2016

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AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

IEEE electron device letters, 2013-08, Vol.34 (8), p.981-983

2013

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101-GHz InAlN/GaN HEMTs on Silicon With High Johnson's Figure-of-Merit

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2675-2678

2015

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A 0.01-to-2.6-GHz Two-Fold Current Reuse Dual Noise-Canceling LNA Achieving 6.8-K Noise Temperature for Quantum Applications

IEEE transactions on circuits and systems. II, Express briefs, 2024-05, Vol.71 (5), p.2504-2508

2024

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Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits

Transmission Lines-Based Impedance Matching Technique for Broadband Rectifier

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

A Multi-ESD-Path Low-Noise Amplifier With a 4.3-A TLP Current Level in 65-nm CMOS

CMOS Distributed Amplifiers Using Gate-Drain Transformer Feedback Technique

High-Power Wire Bonded GaN Rectifier for Wireless Power Transmission

Electro-Static Discharge Protection Design for V-Band Low-Noise Amplifier Using Radio Frequency Junction Varactor

AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio

An Inductorless 20-Gbaud Overshoot Suppression Modulator Driver Using Interleave Frequency Variant Feedback in 90-nm CMOS

An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS

A 10-Gb/s Low Jitter Single-Loop Clock and Data Recovery Circuit With Rotational Phase Frequency Detector

A 76.2-89.1 GHz Phase-Locked Loop With 15.6% Tuning Range in 90 nm CMOS for W-Band Applications

A Compact V-Band Bandpass Filter in IPD Technology

A Miniature 300-MHz Resonant DC-DC Converter With GaN and CMOS Integrated in IPD Technology

Second Harmonic Exploitation for High-Efficiency Wireless Power Transfer Using Duplexing Rectenna

A 17.5-26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications

Ultracompact Inductorless Noise-Canceling LNAs in 40-nm CMOS Achieving 2.2-K Noise Temperature for Qubit Readout

A 40-Gb/s Modulator Driver Using Cascade Swing Compensation in 90 nm CMOS

ESD-Protected K-Band Low-Noise Amplifiers Using RF Junction Varactors in 65-nm CMOS

A 24 GHz Low-Noise Amplifier Using RF Junction Varactors for Noise Optimization and CDM ESD Protection in 90 nm CMOS

2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga's Figure-of-Merit

AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

101-GHz InAlN/GaN HEMTs on Silicon With High Johnson's Figure-of-Merit

A 0.01-to-2.6-GHz Two-Fold Current Reuse Dual Noise-Canceling LNA Achieving 6.8-K Noise Temperature for Quantum Applications

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