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Low Dark Current InGaAs(P)/InP p–i–n Photodiodes

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 7A), p.4249-4252

2003

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Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1181-1186

1996

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InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Solid-state electronics, 2005-02, Vol.49 (2), p.163-166

2005

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Annealing effect on the buffer layer of high-quality crystalline GaN

Physics of Semiconductors; Part A, 2007, Vol.893, p.23-24

2007

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Emitter edge-thinning effect on InGaAs/InP double-heterostructure-emitter bipolar transistor

Japanese Journal of Applied Physics, 1995, Vol.34 (11), p.5908-5911

1995

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Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 1994-12, Vol.33 (12R), p.6514

1994

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On the improvement of gate voltage swings in δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic heterostructures

IEEE transactions on electron devices, 1993-09, Vol.40 (9), p.1630-1635

1993

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25 Gb/s directly modulation of 1550 nm DFB lasers with coplanar waveguide

2012 17th Opto-Electronics and Communications Conference, 2012, p.525-526

2012

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Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors

Japanese Journal of Applied Physics, 1996, Vol.35 (4R), p.2085

1996

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Characteristics of In0.52Al0.48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels

Solid-state electronics, 2004-01, Vol.48 (1), p.119-124

2004

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Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Semiconductor science and technology, 2006-06, Vol.21 (6), p.781-785

2006

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Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-11, Vol.21 (6), p.2555-2557

2003

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Characteristics of In0.52Al0.48As/InxGa1−xAsyP1−y/In0.52Al0.48As high electron-mobility transistors

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-05, Vol.22 (3), p.1044-1047

2004

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Comparative study of In 0.52 Al 0.48 As/In x Ga 1− x As/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Semiconductor science and technology, 2006-06, Vol.21 (6), p.781-785

2006

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Characteristics of In 0.52Al 0.48As/In xGa 1− xAs HEMT’s with various In xGa 1− xAs channels

Solid-state electronics, 2004, Vol.48 (1), p.119-124

2004

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Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe4

Nature nanotechnology, 2021-04, Vol.16 (4), p.421-425

2021

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Investigation of the electron transfer characteristics in multi-/spl delta/-doped GaAs FET's

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1181-1186

1996

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Investigation of the electron transfer characteristics inmulti-delta -doped GaAs FET' s

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1181-1186

1996

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Large‐Area and High‐Quality 2D Transition Metal Telluride

Advanced materials (Weinheim), 2017-01, Vol.29 (3), p.np-n/a

2017

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Observation of the nonlinear Hall effect under time-reversal-symmetric conditions

Nature (London), 2019-01, Vol.565 (7739), p.337-342

2019

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A high-performance delta -doped GaAs/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor utilizing a graded In/sub x/Ga/sub 1-x/As channel

IEEE electron device letters, 1993-12, Vol.14 (12), p.581-583

1993

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A high-performance delta -dopedGaAs/In(x)Ga(1-x)As pseudomorphic high electronmobility transistor utilizing a graded In(x)Ga(1-x)Aschannel

IEEE electron device letters, 1993-12, Vol.14 (12), p.581-583

1993

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A high-performance delta-doped GaAs/In(x)Ga(1-x)As pseudomorphic high electron mobility transistor utilizing a graded In(x)Ga(1-x)As channel

IEEE electron device letters, 1993-12, Vol.14 (12), p.581-583

1993

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Evidence of indirect gap in monolayer WSe2

Nature communications, 2017-10, Vol.8 (1), p.1-7, Article 929

2017

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Nexus fermions in topological symmorphic crystalline metals

Scientific reports, 2017-05, Vol.7 (1), p.1688-13, Article 1688

2017

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Low Dark Current InGaAs(P)/InP p–i–n Photodiodes

Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Annealing effect on the buffer layer of high-quality crystalline GaN

Emitter edge-thinning effect on InGaAs/InP double-heterostructure-emitter bipolar transistor

Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

On the improvement of gate voltage swings in δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic heterostructures

25 Gb/s directly modulation of 1550 nm DFB lasers with coplanar waveguide

Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors

Characteristics of In0.52Al0.48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels

Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base

Characteristics of In0.52Al0.48As/InxGa1−xAsyP1−y/In0.52Al0.48As high electron-mobility transistors

Comparative study of In 0.52 Al 0.48 As/In x Ga 1− x As/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Characteristics of In 0.52Al 0.48As/In xGa 1− xAs HEMT’s with various In xGa 1− xAs channels

Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe4

Investigation of the electron transfer characteristics in multi-/spl delta/-doped GaAs FET's

Investigation of the electron transfer characteristics inmulti-delta -doped GaAs FET' s

Large‐Area and High‐Quality 2D Transition Metal Telluride

Observation of the nonlinear Hall effect under time-reversal-symmetric conditions

A high-performance delta -doped GaAs/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor utilizing a graded In/sub x/Ga/sub 1-x/As channel

A high-performance delta -dopedGaAs/In(x)Ga(1-x)As pseudomorphic high electronmobility transistor utilizing a graded In(x)Ga(1-x)Aschannel

A high-performance delta-doped GaAs/In(x)Ga(1-x)As pseudomorphic high electron mobility transistor utilizing a graded In(x)Ga(1-x)As channel

Evidence of indirect gap in monolayer WSe2

Nexus fermions in topological symmorphic crystalline metals

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