UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 215

Sortiert nach

An Ultra-Wideband, High Power and High Isolation Single-Pole-Double-Throw Switch Using Capacitive Loading Approach

IEEE transactions on circuits and systems. II, Express briefs, 2023-11, Vol.70 (11), p.1-1

2023

Link zum Volltext
IEEE_Xplore

A dual‐band polarization switchable antenna switch module for 5G new‐radio applications

International journal of circuit theory and applications, 2024-02, Vol.52 (2), p.483-493

2024

Link zum Volltext

Verfügbarkeit prüfen

A 20‐W wideband voltage controlled attenuator for millimeter‐wave applications

International journal of circuit theory and applications, 2023-05, Vol.51 (5), p.2065-2078

2023

Link zum Volltext

Verfügbarkeit prüfen

Design of a Compact RF Front-end Transceiver Module for 5G New-Radio Applications

IEEE transactions on instrumentation and measurement, 2023-01, Vol.72, p.1-1

2023

Link zum Volltext
IEEE_Xplore

Highly Robust GaN Power Amplifier at Millimeter-Wave Frequencies Using Sputtered Iridium Gate MMIC Technology

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6244-6249

2023

Link zum Volltext
IEEE_Xplore

A 52-58 GHz Power Amplifier With 18.6-dBm Saturated Output Power for Space Applications

IEEE transactions on circuits and systems. II, Express briefs, 2021-06, Vol.68 (6), p.1927-1931

2021

Link zum Volltext
IEEE_Xplore

A Koch-Shaped Log-Periodic Dipole Array (LPDA) Antenna for Universal Ultra-High-Frequency (UHF) Radio Frequency Identification (RFID) Handheld Reader

IEEE transactions on antennas and propagation, 2013-09, Vol.61 (9), p.4852-4856

2013

Link zum Volltext
IEEE_Xplore

Dual-Band and Dual-Polarization CPW Fed MIMO Antenna for Fifth-Generation Mobile Communications Technology at 28 and 38 GHz

IEEE access, 2022, Vol.10, p.46853-46863

2022

Link zum Volltext

Verfügbarkeit prüfen

Circulating tumor cells as a “real-time liquid biopsy”: Recent advances and the application in ovarian cancer

Taiwanese journal of obstetrics & gynecology, 2022-01, Vol.61 (1), p.34-39

2022

Link zum Volltext

Verfügbarkeit prüfen

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

Link zum Volltext

Verfügbarkeit prüfen

The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration

Results in physics, 2024-04, Vol.59, p.107612, Article 107612

2024

Link zum Volltext

Verfügbarkeit prüfen

Compact phase shifter using arbitrary length of two coupled transmission lines

IET circuits, devices & systems, 2021-08, Vol.15 (5), p.403-414

2021

Link zum Volltext

Verfügbarkeit prüfen

UWB Connected Ground Transparent 4-Port Flexible MIMO Antenna for IoT Applications

IEEE internet of things journal, 2024-04, Vol.11 (7), p.1-1

2024

Link zum Volltext
IEEE_Xplore

A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications

IEEE electron device letters, 2022-10, Vol.43 (10), p.1629-1632

2022

Link zum Volltext
IEEE_Xplore

Dual-band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications

IEEE access, 2022, Vol.10, p.1-1

2022

Link zum Volltext

Verfügbarkeit prüfen

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

IEEE electron device letters, 2017-06, Vol.38 (6), p.771-774

2017

Link zum Volltext
IEEE_Xplore

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3876-3881

2016

Link zum Volltext
IEEE_Xplore

A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.36-42

2023

Link zum Volltext

Verfügbarkeit prüfen

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Materials, 2021-11, Vol.14 (21), p.6558

2021

Link zum Volltext

Verfügbarkeit prüfen

Rigorous Analysis and Investigation of the Bandwidth Broadening Mechanism in a Compact Power Divider with Physical Port Isolation

IEEE access, 2022-01, Vol.10, p.1-1

2022

Link zum Volltext

Verfügbarkeit prüfen

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications

IEEE journal of the Electron Devices Society, 2024-01, Vol.12, p.1-1

2024

Link zum Volltext

Verfügbarkeit prüfen

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Micromachines (Basel), 2023-04, Vol.14 (5), p.931

2023

Link zum Volltext

Verfügbarkeit prüfen

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Materials, 2022-01, Vol.15 (3), p.703

2022

Link zum Volltext

Verfügbarkeit prüfen

Thickness-Dependent Transmission in a Finite Photonic Crystal Containing Nearly Ferroelectric Superconductor

IEEE journal of selected topics in quantum electronics, 2015-03, Vol.21 (2), p.1-5

2015

Link zum Volltext

Verfügbarkeit prüfen

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Micromachines (Basel), 2020-02, Vol.11 (2), p.222

2020

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 215

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(135)
Mit Volltextzugriff
(196)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(148)
Technology
(114)
Engineering
(100)
Engineering, Electrical & Electronic
(98)
Physical Sciences
(55)
Physics
(52)
Physics, Applied
(48)
Telecommunications
(47)
Hemts
(32)
High Electron Mobility Transistors
(26)
Radio Frequency
(24)
Semiconductor Devices
(24)
Antenna Measurements
(23)
Antennas
(20)
Gallium Nitrides
(20)
Life Sciences & Biomedicine
(19)
Logic Gates
(18)
Modfets
(18)
Transistors
(18)
Computer Science
(14)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

An Ultra-Wideband, High Power and High Isolation Single-Pole-Double-Throw Switch Using Capacitive Loading Approach

A dual‐band polarization switchable antenna switch module for 5G new‐radio applications

A 20‐W wideband voltage controlled attenuator for millimeter‐wave applications

Design of a Compact RF Front-end Transceiver Module for 5G New-Radio Applications

Highly Robust GaN Power Amplifier at Millimeter-Wave Frequencies Using Sputtered Iridium Gate MMIC Technology

A 52-58 GHz Power Amplifier With 18.6-dBm Saturated Output Power for Space Applications

A Koch-Shaped Log-Periodic Dipole Array (LPDA) Antenna for Universal Ultra-High-Frequency (UHF) Radio Frequency Identification (RFID) Handheld Reader

Dual-Band and Dual-Polarization CPW Fed MIMO Antenna for Fifth-Generation Mobile Communications Technology at 28 and 38 GHz

Circulating tumor cells as a “real-time liquid biopsy”: Recent advances and the application in ovarian cancer

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration

Compact phase shifter using arbitrary length of two coupled transmission lines

UWB Connected Ground Transparent 4-Port Flexible MIMO Antenna for IoT Applications

A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications

Dual-band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Rigorous Analysis and Investigation of the Bandwidth Broadening Mechanism in a Compact Power Divider with Physical Port Isolation

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Thickness-Dependent Transmission in a Finite Photonic Crystal Containing Nearly Ferroelectric Superconductor

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Suchergebnisse filtern