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A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.31005

2024

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Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

Journal of electronic materials, 2021-09, Vol.50 (9), p.5453-5461

2021

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Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Journal of electronic materials, 2021-03, Vol.50 (3), p.1162-1166

2021

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Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Trap-Profile Extraction Using High-Voltage Capacitance-Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.835-839

2015

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Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.507-511

2015

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Flip-Chip-Assembled W-Band CMOS Chip Modules on Ceramic Integrated Passive Device With Transition Compensation for Millimeter-Wave System-in-Package Integration

IEEE transactions on microwave theory and techniques, 2012-03, Vol.60 (3), p.766-777

2012

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An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

ECS journal of solid state science and technology, 2024-01, Vol.13 (1), p.15004

2024

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A Fully SiP Integrated V-Band Butler Matrix End-Fire Beam-Switching Transmitter Using Flip-Chip Assembled CMOS Chips on LTCC

IEEE transactions on microwave theory and techniques, 2012-05, Vol.60 (5), p.1424-1436

2012

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Effect of Deep N-Well Bias in an 850-nm Si Photodiode Fabricated Using the CMOS Process

IEEE photonics technology letters, 2013-04, Vol.25 (7), p.659-662

2013

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Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Semiconductor science and technology, 2021-12, Vol.36 (12), p.125021

2021

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Design and Analysis of a Ka-Band Monolithic High-Efficiency Frequency Quadrupler Using GaAs HBT - HEMT Common-Base/Common-Source Balanced Topology

IEEE transactions on microwave theory and techniques, 2013-10, Vol.61 (10), p.3674-3689

2013

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Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1099-1103

2015

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High-Speed, High-Efficiency, Large-Area p-i-n Photodiode for Application to Optical Interconnects from 0.85 to 1.55 μm Wavelengths

Journal of lightwave technology, 2013-12, Vol.31 (24), p.3956-3961

2013

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Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

IET microwaves, antennas & propagation, 2015-04, Vol.9 (6), p.502-507

2015

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Large-Area p-i-n Photodiode With High-Speed and High-Efficiency Across a Wide Optical Operation Window (0.85 to 1.55 μm)

IEEE journal of selected topics in quantum electronics, 2014-11, Vol.20 (6), p.22-28

2014

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A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect

IEEE transactions on microwave theory and techniques, 2006-10, Vol.54 (10), p.3641-3647

2006

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A Broadband High Efficiency High Output Power Frequency Doubler

IEEE microwave and wireless components letters, 2010-04, Vol.20 (4), p.226-228

2010

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High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor

MRS communications, 2021-08, Vol.11 (4), p.517-522

2021

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High-performance normally-off recessed tri-gate GaN MIS-FETs in micrometer scale

Semiconductor science and technology, 2022-01, Vol.37 (1), p.15002

2022

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Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

ECS journal of solid state science and technology, 2024-05, Vol.13 (5), p.55003

2024

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Design and Analysis for a 850 nm Si Photodiode Using the Body Bias Technique for Low-voltage Operation

Journal of lightwave technology, 2013-03, Vol.31 (6), p.936-941

2013

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A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

IEEE photonics technology letters, 2007-02, Vol.19 (4), p.197-199

2007

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Silicon Photodiodes in Standard CMOS Technology

IEEE journal of selected topics in quantum electronics, 2011-05, Vol.17 (3), p.730-740

2011

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A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Trap-Profile Extraction Using High-Voltage Capacitance-Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

Flip-Chip-Assembled W-Band CMOS Chip Modules on Ceramic Integrated Passive Device With Transition Compensation for Millimeter-Wave System-in-Package Integration

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

A Fully SiP Integrated V-Band Butler Matrix End-Fire Beam-Switching Transmitter Using Flip-Chip Assembled CMOS Chips on LTCC

Effect of Deep N-Well Bias in an 850-nm Si Photodiode Fabricated Using the CMOS Process

Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Design and Analysis of a Ka-Band Monolithic High-Efficiency Frequency Quadrupler Using GaAs HBT - HEMT Common-Base/Common-Source Balanced Topology

Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements

High-Speed, High-Efficiency, Large-Area p-i-n Photodiode for Application to Optical Interconnects from 0.85 to 1.55 μm Wavelengths

Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

Large-Area p-i-n Photodiode With High-Speed and High-Efficiency Across a Wide Optical Operation Window (0.85 to 1.55 μm)

A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect

A Broadband High Efficiency High Output Power Frequency Doubler

High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor

High-performance normally-off recessed tri-gate GaN MIS-FETs in micrometer scale

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Design and Analysis for a 850 nm Si Photodiode Using the Body Bias Technique for Low-voltage Operation

A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

Silicon Photodiodes in Standard CMOS Technology

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