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Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths

Electronics letters, 2016-09, Vol.52 (20), p.1707-1708

2016

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The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

Applied physics letters, 2014-01, Vol.104 (3)

2014

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Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

Electronics letters, 2008, Vol.44 (1), p.52-53

2008

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A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

IEEE photonics technology letters, 2007-02, Vol.19 (4), p.197-199

2007

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Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs

Electronics letters, 2013-08, Vol.49 (16), p.1026-1028

2013

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Development of capacitance measurement system for human serum albumin detection

Electronics letters, 2010-05, Vol.46 (10), p.678-680

2010

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DC characteristics of AZO/GaN heterojunction bipolar transistors

Electronics letters, 2009, Vol.45 (4), p.230-231

2009

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Haem oxygenase-1 plays a central role in NNK-mediated lung carcinogenesis

The European respiratory journal, 2008-10, Vol.32 (4), p.911-923

2008

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Flip-Chip Assembled GaAs pHEMT Ka-Band Oscillator

IEEE microwave and wireless components letters, 2007-01, Vol.17 (1), p.67-69

2007

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A new PZT piezoelectric sensor for gravimetric applications using the resonance-frequency detection

Sensors and actuators. B, Chemical, 2009-06, Vol.139 (2), p.259-264

2009

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Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches

Solid-state electronics, 2005-03, Vol.49 (3), p.295-300

2005

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Pioglitazone prevents smoking carcinogen-induced lung tumor development in mice

Current cancer drug targets, 2012-07, Vol.12 (6), p.597

2012

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36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InP HBT/evanescently coupled photodiode

IET optoelectronics, 2008-02, Vol.2 (1), p.6-9

2008

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Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Physica status solidi. A, Applied research, 2004-07, Vol.201 (9), p.2190-2193

2004

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Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Journal of electronic materials, 2003-09, Vol.32 (9), p.948-951

2003

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Haem oxygenase-1 plays a central role in NNK-mediated lung carcinogenesis

The European respiratory journal, 2008-10, Vol.32 (4), p.911

2008

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Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases

Solid-state electronics, 2000-04, Vol.44 (4), p.587-592

2000

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Scaling Effect Of GaAs pHEMTs Small Signal And Noise Model

Noise and Fluctuations (AIP Conference Proceedings Volume 1129), 2009, Vol.1129, p.305-308

2009

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GaAs Metal-Semiconductor Field-Effect Transistor with Surface Oxygen Implantation

Japanese Journal of Applied Physics, 2001-10, Vol.40 (10B), p.L1084-L1085

2001

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AlGaAs/GaAs HBTs with extrinsic base regrowth

Journal of crystal growth, 1998-06, Vol.188 (1), p.355-358

1998

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Needlescopic video-assisted thoracic surgery pleurodesis for primary pneumothorax

Multimedia manual of cardiothoracic surgery, 2014, Vol.2014, p.mmu012-mmu012

2014

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15-Lipoxygenases and its metabolites 15(S)-HETE and 13(S)-HODE in the development of non-small cell lung cancer

Thorax, 2010-04, Vol.65 (4), p.321-326

2010

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4-Methylnitrosamino-1-3-pyridyl-1-butanone (NNK) promotes lung cancer cell survival by stimulating thromboxane A and its receptor

Oncogene, 2011-01, Vol.30 (1), p.106-116

2011

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Publisher's Note: “The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors” [Appl. Phys. Lett. 104, 033503 (2014)]

Applied physics letters, 2014-02, Vol.104 (6)

2014

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A pseudomorphic GaInP/InP MESFET with improved device performance

IEEE transactions on electron devices, 1993-12, Vol.40 (12), p.2361-2362

1993

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Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths

The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs

Development of capacitance measurement system for human serum albumin detection

DC characteristics of AZO/GaN heterojunction bipolar transistors

Haem oxygenase-1 plays a central role in NNK-mediated lung carcinogenesis

Flip-Chip Assembled GaAs pHEMT Ka-Band Oscillator

A new PZT piezoelectric sensor for gravimetric applications using the resonance-frequency detection

Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches

Pioglitazone prevents smoking carcinogen-induced lung tumor development in mice

36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InP HBT/evanescently coupled photodiode

Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Haem oxygenase-1 plays a central role in NNK-mediated lung carcinogenesis

Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases

Scaling Effect Of GaAs pHEMTs Small Signal And Noise Model

GaAs Metal-Semiconductor Field-Effect Transistor with Surface Oxygen Implantation

AlGaAs/GaAs HBTs with extrinsic base regrowth

Needlescopic video-assisted thoracic surgery pleurodesis for primary pneumothorax

15-Lipoxygenases and its metabolites 15(S)-HETE and 13(S)-HODE in the development of non-small cell lung cancer

4-Methylnitrosamino-1-3-pyridyl-1-butanone (NNK) promotes lung cancer cell survival by stimulating thromboxane A and its receptor

Publisher's Note: “The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors” [Appl. Phys. Lett. 104, 033503 (2014)]

A pseudomorphic GaInP/InP MESFET with improved device performance

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