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Designing novel lightweight, high-strength and high-plasticity Tix(AlCrNb)100-x medium-entropy alloys

Intermetallics, 2020-02, Vol.117, p.1, Article 106673

2020

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Effect of Al concentration on the microstructural and mechanical properties of lightweight Ti60Alx(VCrNb)40-x medium-entropy alloys

Intermetallics, 2021-08, Vol.135, p.107213, Article 107213

2021

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Standing 8-Electrode Bioelectrical Impedance Analysis as an Alternative Method to Estimate Visceral Fat Area and Body Fat Mass in Athletes

International journal of general medicine, 2021-01, Vol.14, p.539-548

2021

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Magnetosphere Imaging Instrument (MIMI) on the Cassini Mission to Saturn/Titan

Space science reviews, 2004-09, Vol.114 (1-4), p.233-329

2004

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Plasma Acceleration Above Martian Magnetic Anomalies

Science (American Association for the Advancement of Science), 2006-02, Vol.311 (5763), p.980-983

2006

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The metabotropic glutamate (mGLU)2/3 receptor antagonist LY341495 [2S-2-amino-2-(1S,2S-2-carboxycyclopropyl-1-yl)-3-(xanth-9-yl)propanoic acid] stimulates waking and fast electroencephalogram power and blocks the effects of the mGLU2/3 receptor agonist ly379268 [(-)-2-oxa-4-aminobicyclo[3.1.0]hexane-4,6-dicarboxylate] in rats

The Journal of pharmacology and experimental therapeutics, 2005-02, Vol.312 (2), p.826-833

2005

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One-stage reconstruction of Large midline abdominal wall defects using a composite free anterolateral thigh flap with vascularized fascia lata

Annals of surgery, 2004-03, Vol.239 (3), p.352-358

2004

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Bulkier glass formability enhanced by minor alloying additions

Applied physics letters, 2005-10, Vol.87 (17), p.171914-171914-3

2005

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Characterization of GaAs-based n-n and p-n interface junctions prepared by direct wafer bonding

Journal of applied physics, 2002-12, Vol.92 (12), p.7544-7549

2002

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Direct Measurements of Energetic Neutral Hydrogen in the Interplanetary Medium

The Astrophysical journal, 2006-06, Vol.644 (2), p.1317-1325

2006

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Heliospheric energetic neutral atoms as a means to determine the anomalous cosmic ray spectrum at the termination shock

Astronomy and astrophysics (Berlin), 2005-03, Vol.431 (3), p.1061-1068

2005

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Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

Applied physics letters, 2000-01, Vol.76 (3), p.312-314

2000

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The formation and growth of intermetallic compounds in Sn-Zn and Sn-Zn-Al solder with Ni/Au surface finish bond pad

Journal of electronic materials, 2006-03, Vol.35 (3), p.399-405

2006

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Surface morphology control of InAs nanostructures grown on InGaAs/InP

Applied physics letters, 2003-06, Vol.82 (25), p.4555-4557

2003

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Imaging two geomagnetic storms in energetic neutral atoms

Geophysical research letters, 2001-03, Vol.28 (6), p.1151-1154

2001

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High energy neutral atom (hena) imager for the IMAGE mission

Space science reviews, 2000-01, Vol.91 (1-2), p.67-112

2000

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The effect of Pd and Cu in the intermetallic growth of alloy Au wire

Journal of electronic materials, 2003-11, Vol.32 (11), p.1182-1187

2003

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Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength

Journal of applied physics, 2003-05, Vol.93 (9), p.5750-5756

2003

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High indium metamorphic HEMT on a GaAs substrate

Journal of crystal growth, 2003-04, Vol.251 (1), p.827-831

2003

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Kinetic study of thermally induced electronic and morphological transitions of a wafer-bonded GaAs/GaAs interface

Journal of applied physics, 2003-08, Vol.94 (4), p.2423-2425

2003

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Bromine- and chlorine-induced degradation of gold-aluminum bonds

Journal of electronic materials, 2004-10, Vol.33 (10), p.1111-1117

2004

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Site-controlled InAs quantum dots regrown on nonlithographically patterned GaAs

Applied physics letters, 2005-04, Vol.86 (15), p.153114-153114-3

2005

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CELIAS-charge, element and isotope analysis system for SOHO

Solar physics, 1995-12, Vol.162 (1-2), p.441-481

1995

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Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors

Journal of applied physics, 2004-02, Vol.95 (3), p.909-912

2004

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The joint strength and microstructure of fluxless Au/Sn solders in InP-based laser diode packages

Journal of electronic materials, 2005-10, Vol.34 (10), p.1318-1323

2005

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Designing novel lightweight, high-strength and high-plasticity Tix(AlCrNb)100-x medium-entropy alloys

Effect of Al concentration on the microstructural and mechanical properties of lightweight Ti60Alx(VCrNb)40-x medium-entropy alloys

Standing 8-Electrode Bioelectrical Impedance Analysis as an Alternative Method to Estimate Visceral Fat Area and Body Fat Mass in Athletes

Magnetosphere Imaging Instrument (MIMI) on the Cassini Mission to Saturn/Titan

Plasma Acceleration Above Martian Magnetic Anomalies

One-stage reconstruction of Large midline abdominal wall defects using a composite free anterolateral thigh flap with vascularized fascia lata

Bulkier glass formability enhanced by minor alloying additions

Characterization of GaAs-based n-n and p-n interface junctions prepared by direct wafer bonding

Direct Measurements of Energetic Neutral Hydrogen in the Interplanetary Medium

Heliospheric energetic neutral atoms as a means to determine the anomalous cosmic ray spectrum at the termination shock

Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

The formation and growth of intermetallic compounds in Sn-Zn and Sn-Zn-Al solder with Ni/Au surface finish bond pad

Surface morphology control of InAs nanostructures grown on InGaAs/InP

Imaging two geomagnetic storms in energetic neutral atoms

High energy neutral atom (hena) imager for the IMAGE mission

The effect of Pd and Cu in the intermetallic growth of alloy Au wire

Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength

High indium metamorphic HEMT on a GaAs substrate

Kinetic study of thermally induced electronic and morphological transitions of a wafer-bonded GaAs/GaAs interface

Bromine- and chlorine-induced degradation of gold-aluminum bonds

Site-controlled InAs quantum dots regrown on nonlithographically patterned GaAs

CELIAS-charge, element and isotope analysis system for SOHO

Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors

The joint strength and microstructure of fluxless Au/Sn solders in InP-based laser diode packages

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