UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 3.936

Sortiert nach

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

Volltextzugriff (PDF)

Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling

Applied physics letters, 2005-10, Vol.87 (14)

2005

Volltextzugriff (PDF)

Singlemode InAs quantum dot photonic crystal VCSELs

Electronics letters, 2005-09, Vol.41 (20), p.1130-1132

2005

Volltextzugriff (PDF)

Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices

Semiconductor science and technology, 2007-09, Vol.22 (9), p.1077-1080

2007

Volltextzugriff (PDF)

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

Applied physics. B, Lasers and optics, 2005-12, Vol.81 (8), p.1097-1100

2005

Volltextzugriff (PDF)

Effect of growth rate on the composition fluctuation of InGaAsN∕GaAs single quantum wells

Journal of applied physics, 2006-06, Vol.99 (12)

2006

Volltextzugriff (PDF)

Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1176-1180

2006

Volltextzugriff (PDF)

Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots

Nanotechnology, 2007-09, Vol.18 (35), p.355401-355401 (7)

2007

Volltextzugriff (PDF)

Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures

Nanotechnology, 2007-01, Vol.18 (1), p.015401-015401 (5)

2007

Volltextzugriff (PDF)

Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells

Nanotechnology, 2007-06, Vol.18 (23), p.235402-235402 (5)

2007

Volltextzugriff (PDF)

Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847-849

2006

Volltextzugriff (PDF)

Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 μm application grown by molecular beam epitaxy

Journal of crystal growth, 2006-05, Vol.291 (1), p.27-33

2006

Volltextzugriff (PDF)

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

Nanotechnology, 2006-12, Vol.17 (23), p.5722-5725

2006

Volltextzugriff (PDF)

Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs

Journal of applied physics, 2005-07, Vol.98 (1), p.013716-013716-5

2005

Volltextzugriff (PDF)

Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots

Journal of applied physics, 2006-01, Vol.99 (1), p.014303-014303-4

2006

Volltextzugriff (PDF)

Characterization of self-assembled InAs quantum dots with InAlAs ∕ InGaAs strain-reduced layers by photoluminescence spectroscopy

Journal of applied physics, 2005-04, Vol.97 (8), p.083511-083511-4

2005

Volltextzugriff (PDF)

High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Journal of crystal growth, 2004-02, Vol.262 (1), p.84-88

2004

Volltextzugriff (PDF)

Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time

Journal of applied physics, 2006-01, Vol.99 (2), p.023711-023711-5

2006

Volltextzugriff (PDF)

Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

Physica status solidi. C, 2003-07 (4), p.1339-1342

2003

Volltextzugriff (PDF)

N incorporation into InGaAs cap layer in InAs self-assembled quantum dots

Journal of applied physics, 2005-12, Vol.98 (11)

2005

Volltextzugriff (PDF)

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Semiconductors (Woodbury, N.Y.), 2007-10, Vol.41 (10), p.1224-1229

2007

Volltextzugriff (PDF)

1.3 μm quantum dot vertical-cavity surface-emitting laser with external light injection

Electronics letters, 2005-10, Vol.41 (22), p.1222-1223

2005

Volltextzugriff (PDF)

Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Applied physics letters, 2006-06, Vol.88 (23), p.233113

2006

Volltextzugriff (PDF)

Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range

Semiconductors (Woodbury, N.Y.), 2004-06, Vol.38 (6), p.727-731

2004

Volltextzugriff (PDF)

Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2010-01, Vol.166 (1), p.46-49

2010

Volltextzugriff (PDF)

1 – 25 von 3.936

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(3.360)
Mit Volltextzugriff
(3.533)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

3 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(2.716)
Life Sciences & Biomedicine
(1.479)
Humans
(997)
Physical Sciences
(789)
Technology
(650)
Animals
(589)
Male
(571)
Female
(530)
Biological And Medical Sciences
(527)
Exact Sciences And Technology
(372)
Medical Sciences
(363)
Engineering
(353)
Physics
(300)
Adult
(299)
Mice
(286)
Middle Aged
(266)
Applied Sciences
(244)
Chemistry
(217)
Biochemistry & Molecular Biology
(216)
Engineering, Electrical & Electronic
(216)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling

Singlemode InAs quantum dot photonic crystal VCSELs

Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

Effect of growth rate on the composition fluctuation of InGaAsN∕GaAs single quantum wells

Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs

Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots

Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures

Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells

Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB

Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 μm application grown by molecular beam epitaxy

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs

Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots

Characterization of self-assembled InAs quantum dots with InAlAs ∕ InGaAs strain-reduced layers by photoluminescence spectroscopy

High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time

Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots

N incorporation into InGaAs cap layer in InAs self-assembled quantum dots

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

1.3 μm quantum dot vertical-cavity surface-emitting laser with external light injection

Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range

Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Suchergebnisse filtern