UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Stress Modulation of Silicon Nitride Film by Initial Deposition Conditions for Transistor Carrier Mobility Enhancement

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05FB01-05FB01-4

2010

Volltextzugriff (PDF)

Underfill selection methodology for fine pitch Cu/low-k FCBGA packages

Microelectronics and reliability, 2009-02, Vol.49 (2), p.150-162

2009

Volltextzugriff (PDF)

Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-07, Vol.24 (4), p.1404-1409

2006

Volltextzugriff (PDF)

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

Materials Science Forum, 2016-05, Vol.858, p.229-232

2016

Volltextzugriff (PDF)

Effects of low k film properties on electromigration performance

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.621-622

2004

Volltextzugriff (PDF)

Wafer level microarcing model in 90 nm chemical-vapor deposition low- k via etch on 300 mm silicon-on-insulator substrate

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-07, Vol.24 (4), p.1404-1409

2006

Volltextzugriff (PDF)

Towards Unification of MOS Compact Models with the Unified Regional Approach

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.1193-1197

2006

Volltextzugriff (PDF)

BEOL Advance Interconnect Technology Overview and Challenges

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.28-29

2008

Volltextzugriff (PDF)

Integration of a poisoning-free dual damascene CDO film stack for 90 nm & beyond low-k BEOL

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), 2005, p.70-71

2005

Volltextzugriff (PDF)

Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-09, Vol.16 (5), p.2712-2719

1998

Volltextzugriff (PDF)