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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

IEEE electron device letters, 2008-09, Vol.29 (9), p.1074-1077

2008

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Fabrication and analysis of deep submicron strained-Si n-MOSFET's

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1406-1415

2000

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Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2644-2651, Article 2644

2009

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Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter

IEEE electron device letters, 2009-04, Vol.30 (4), p.401-403

2009

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A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2069-2072

2004

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Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2687-2694

2008

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Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm

IEEE electron device letters, 2007-04, Vol.28 (4), p.285-287

2007

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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

IEEE electron device letters, 2001-07, Vol.22 (7), p.321-323

2001

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Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1021-1029

2006

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Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

IEEE electron device letters, 1994-03, Vol.15 (3), p.100-102

1994

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Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm

IEEE electron device letters, 2005-09, Vol.26 (9), p.661-663

2005

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Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

IEEE electron device letters, 2008-05, Vol.29 (5), p.468-470

2008

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Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

IEEE electron device letters, 2003-04, Vol.24 (4), p.248-250

2003

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Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2136-2144

2004

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Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology

IEEE electron device letters, 2004-06, Vol.25 (6), p.402-404

2004

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Building Many-Core Processor-to-DRAM Networks with Monolithic CMOS Silicon Photonics

IEEE MICRO, 2009-07, Vol.29 (4), p.8-21

2009

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Mobility enhancement in dual-channel P-MOSFETs

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1424-1431

2004

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Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface

IEEE electron device letters, 2004-03, Vol.25 (3), p.147-149

2004

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Strained-[Formula Omitted] Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2264

2009

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Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.52-53

2004

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Comparison of Si/Si1−−Ge C and Si/Si1−C heterojunctions grown by rapid thermal chemical vapor deposition

Thin solid films, 1998-05, Vol.321 (1-2), p.41-46

1998

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Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.494-501

1998

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Strained- \hbox\hbox/\hbox Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2264-2269

2009

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Strain dependence of the performance enhancement in strained-Si n-MOSFETs

International Electron Devices Meeting. I E D M Technical Digest. pp. 373-376. 1994, 1994, p.373-376

1994

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Effect of band alignment and density of states on the collector current in p-Si/n-Si/sub 1-y/C/sub y//p-Si HBTs

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.425-432

2003

Volltextzugriff (PDF)

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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter

A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs

Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm

Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs

Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm

Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology

Building Many-Core Processor-to-DRAM Networks with Monolithic CMOS Silicon Photonics

Mobility enhancement in dual-channel P-MOSFETs

Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface

Strained-[Formula Omitted] Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique

Comparison of Si/Si1−−Ge C and Si/Si1−C heterojunctions grown by rapid thermal chemical vapor deposition

Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors

Strained- \hbox\hbox/\hbox Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

Strain dependence of the performance enhancement in strained-Si n-MOSFETs

Effect of band alignment and density of states on the collector current in p-Si/n-Si/sub 1-y/C/sub y//p-Si HBTs

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