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Characterization of dark current in Ge-on-Si photodiodes

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm

IEEE electron device letters, 2007-04, Vol.28 (4), p.285-287

2007

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Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

IEEE electron device letters, 2010-08, Vol.31 (8), p.782-784

2010

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Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

IEEE electron device letters, 1994-03, Vol.15 (3), p.100-102

1994

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Strain relaxation in patterned strained silicon directly on insulator structures

Applied physics letters, 2005-12, Vol.87 (25), p.251926-251926-3

2005

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Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

Applied physics letters, 2002-03, Vol.80 (10), p.1743-1745

2002

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Fabrication and analysis of deep submicron strained-Si n-MOSFET's

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1406-1415

2000

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Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

IBM journal of research and development, 2006-07, Vol.50 (4.5), p.363-376

2006

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On the mechanism of ion-implanted As diffusion in relaxed SiGe

Applied surface science, 2004-03, Vol.224 (1), p.59-62

2004

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Fabrication of ultra-thin strained silicon on insulator

Journal of electronic materials, 2003-09, Vol.32 (9), p.972-975

2003

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Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Applied physics letters, 2003-08, Vol.83 (5), p.875-877

2003

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Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys

Applied physics letters, 2004-01, Vol.84 (3), p.368-370

2004

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A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2069-2072

2004

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Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition

Applied physics letters, 1997-09, Vol.71 (12), p.1688-1690

1997

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Strained silicon MOSFET technology

Digest. International Electron Devices Meeting, 2002, p.23-26

2002

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An Additional Antecedent of Empathic Concern: Valuing the Welfare of the Person in Need

Journal of personality and social psychology, 2007-07, Vol.93 (1), p.65-74

2007

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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

IEEE electron device letters, 2001-07, Vol.22 (7), p.321-323

2001

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Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1021-1029

2006

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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

IEEE electron device letters, 2008-09, Vol.29 (9), p.1074-1077

2008

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Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm

IEEE electron device letters, 2005-09, Vol.26 (9), p.661-663

2005

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Polycrystalline carbon : a novel material for gate electrodes in MOS technology

Japanese Journal of Applied Physics, 1993, Vol.32 (1B), p.380-383

1993

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Measurement of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures using metal-oxide-semiconductor capacitors

Journal of applied physics, 1999-01, Vol.85 (2), p.978-984

1999

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Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layers

Applied physics letters, 1993-02, Vol.62 (6), p.612-614

1993

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Fortified Sera and Their Use in Environmental Virology

Applied and Environmental Microbiology, 2000-05, Vol.66 (5), p.2259-2262

2000

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Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition

Thin solid films, 1998-05, Vol.321 (1-2), p.41-46

1998

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Characterization of dark current in Ge-on-Si photodiodes

Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm

Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

Strain relaxation in patterned strained silicon directly on insulator structures

Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

On the mechanism of ion-implanted As diffusion in relaxed SiGe

Fabrication of ultra-thin strained silicon on insulator

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys

A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition

Strained silicon MOSFET technology

An Additional Antecedent of Empathic Concern: Valuing the Welfare of the Person in Need

Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm

Polycrystalline carbon : a novel material for gate electrodes in MOS technology

Measurement of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures using metal-oxide-semiconductor capacitors

Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layers

Fortified Sera and Their Use in Environmental Virology

Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition

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