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Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

IEEE transactions on microwave theory and techniques, 2019-07, Vol.67 (7), p.2495-2504

2019

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Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1688-1693

2019

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All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

IEEE transactions on power electronics, 2017-11, Vol.32 (11), p.8743-8750

2017

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Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Subthreshold Mobility in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1861-1865

2016

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Analytical Modeling of Speed Response of Heterojunction Bipolar Phototransistors

Journal of lightwave technology, 2007-05, Vol.25 (5), p.1247-1255

2007

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Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

IEEE journal of quantum electronics, 2009-07, Vol.45 (7), p.833-839

2009

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High current effects in double heterojunction bipolar transistors

Semiconductor science and technology, 2005-05, Vol.20 (5), p.412-417

2005

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Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2776-2781

2013

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A 624 V 5 A All‐GaN Integrated Cascode for Power‐Switching Applications

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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A 624V 5A All‐GaN Integrated Cascode for Power‐Switching Applications

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7)

2020

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Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers

Microelectronics and reliability, 2019-04, Vol.95, p.81-86

2019

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Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2464-2469

2015

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied physics express, 2015-03, Vol.8 (3), p.36502

2015

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Peter Neville Robson OBE FREng. 23 November 1930 — 10 January 2010

Biographical memoirs of fellows of the Royal Society, 2011-01, Vol.57, p.423-434

2011

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Selective area LPE growth and open tube diffusion in InGaAs/InP

Journal of electronic materials, 1985, Vol.14 (1), p.9-24

1985

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Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1207-1212

1998

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Modelling the closely-coupled cascode switching process

2016 IEEE Energy Conversion Congress and Exposition (ECCE), 2016, p.1-8

2016

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Analysis of the temperature dependence of current gain in heterojunction bipolar transistors

IEEE transactions on electron devices, 1997-01, Vol.44 (1), p.17-24

1997

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Generalized analytical transport modeling of the DC characteristics of heterojunction bipolar transistors

IEEE transactions on electron devices, 1993-08, Vol.40 (8), p.1390-1397

1993

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Gain of a heterojunction bipolar phototransistor

IEEE transactions on electron devices, 1985-03, Vol.32 (3), p.622-627

1985

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Predicted performance of high-speed integrated-injection logic using InGaAs/InP heterojunction bipolar transistors

IEEE transactions on electron devices, 1992-05, Vol.39 (5), p.1080-1084

1992

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Novel electro-optically controlled directional-coupler switch in GaAs epitaxial layers at 1.15 mu m

IEEE transactions on electron devices, 1982, Vol.ED-29 (9), p.1477-1483

1982

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MBASED: allele-specific expression detection in cancer tissues and cell lines

Genome biology, 2014-08, Vol.15 (8), p.405-405, Article 405

2014

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Möbius strip of memory and history, faith, and fascism: in an Italian Prisoner of War memoir

Stellenbosch theological journal, 2023-01, Vol.8 (1)

Houston, Peter

2023

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Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Subthreshold Mobility in AlGaN/GaN HEMTs

Analytical Modeling of Speed Response of Heterojunction Bipolar Phototransistors

Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s

High current effects in double heterojunction bipolar transistors

Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs

A 624 V 5 A All‐GaN Integrated Cascode for Power‐Switching Applications

A 624V 5A All‐GaN Integrated Cascode for Power‐Switching Applications

Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Peter Neville Robson OBE FREng. 23 November 1930 — 10 January 2010

Selective area LPE growth and open tube diffusion in InGaAs/InP

Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors

Modelling the closely-coupled cascode switching process

Analysis of the temperature dependence of current gain in heterojunction bipolar transistors

Generalized analytical transport modeling of the DC characteristics of heterojunction bipolar transistors

Gain of a heterojunction bipolar phototransistor

Predicted performance of high-speed integrated-injection logic using InGaAs/InP heterojunction bipolar transistors

Novel electro-optically controlled directional-coupler switch in GaAs epitaxial layers at 1.15 mu m

MBASED: allele-specific expression detection in cancer tissues and cell lines

Möbius strip of memory and history, faith, and fascism: in an Italian Prisoner of War memoir

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