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Lattice engineered compliant substrate for defect-free heteroepitaxial growth

Applied physics letters, 1997-03, Vol.70 (13), p.1685-1687

1997

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Dislocation-free InSb grown on GaAs compliant universal substrates

Applied physics letters, 1997-08, Vol.71 (6), p.776-778

1997

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Fuzzy Backstepping Sliding Mode Control for Mismatched Uncertain System

Journal of engineering science and technology review, 2014-06, Vol.7 (2), p.175-181

2014

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InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Applied physics letters, 2000-04, Vol.76 (16), p.2262-2264

2000

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Electrophysiological subtypes and long term prognosis of Guillain-Barré syndrome

Zhong hua yi xue za zhi, 2016-07, Vol.96 (25), p.1987-1990

2016

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InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Applied physics letters, 2000-05, Vol.76 (19), p.2788-2790

2000

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Coherent Dynamics of Excitonic Nonlinear Optical Response in the Nonperturbative Regime

Physical review letters, 1998-10, Vol.81 (15), p.3255-3258

1998

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Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer

IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1329-1335

2002

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Advances in selective wet oxidation of AlGaAs alloys

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.916-926

1997

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Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

IEEE electron device letters, 2001-03, Vol.22 (3), p.113-115

2001

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Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction

IEEE photonics technology letters, 1997-08, Vol.9 (8), p.1069-1071, Article 1069

1997

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High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

Solid-state electronics, 2002-04, Vol.46 (4), p.581-584

2002

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In situ control as composition in InAsP and InGaAsP grown by gas-source molecular beam epitaxy

Applied physics letters, 1992-04, Vol.60 (15), p.1872-1874

1992

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Double-disk structure for output coupling in microdisk lasers

Applied physics letters, 1994-12, Vol.65 (25), p.3167-3169

1994

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Optical property of InAsP/InP strained quantum wells grown on InP (111) B and (100) substrates

Journal of applied physics, 1994-05, Vol.75 (9), p.4673-4679

1994

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Monolithic wavelength-graded VCSEL and resonance-enhanced photodetector arrays for parallel optical interconnects

IEEE photonics technology letters, 1998-05, Vol.10 (5), p.642-644

1998

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Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

IEEE photonics technology letters, 1996-10, Vol.8 (10), p.1285-1287

1996

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VCSELs bonded directly to foundry fabricated GaAs smart pixel arrays

IEEE photonics technology letters, 1997-12, Vol.9 (12), p.1622-1624

1997

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In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy

Journal of crystal growth, 1998-12, Vol.195 (1-4), p.199-204

1998

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Homoepitaxial growth of InP on (111)B substrates by gas-source molecular beam epitaxy

Applied physics letters, 1993-01, Vol.62 (3), p.281-283

1993

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Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy

Applied physics letters, 1991-01, Vol.58 (3), p.254-256

1991

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Spontaneous emission factor in oxide confined vertical-cavity lasers

Applied physics letters, 1997-01, Vol.70 (1), p.13-15

1997

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Field screening in (111)B InAsP/InP strained quantum wells

Journal of electronic materials, 1996, Vol.25 (6), p.1019-1022

1996

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Nearly chirp-free electroabsorption modulation using InGaAs-InGaAlAs-InAlAs coupled quantum wells

IEEE photonics technology letters, 1995-02, Vol.7 (2), p.167-169

1995

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InP and InAsP/InP heterostructures grown on InP (111) B substrates by gas-source molecular beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1), p.199-203

1993

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Lattice engineered compliant substrate for defect-free heteroepitaxial growth

Dislocation-free InSb grown on GaAs compliant universal substrates

Fuzzy Backstepping Sliding Mode Control for Mismatched Uncertain System

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Electrophysiological subtypes and long term prognosis of Guillain-Barré syndrome

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Coherent Dynamics of Excitonic Nonlinear Optical Response in the Nonperturbative Regime

Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer

Advances in selective wet oxidation of AlGaAs alloys

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction

High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

In situ control as composition in InAsP and InGaAsP grown by gas-source molecular beam epitaxy

Double-disk structure for output coupling in microdisk lasers

Optical property of InAsP/InP strained quantum wells grown on InP (111) B and (100) substrates

Monolithic wavelength-graded VCSEL and resonance-enhanced photodetector arrays for parallel optical interconnects

Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

VCSELs bonded directly to foundry fabricated GaAs smart pixel arrays

In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy

Homoepitaxial growth of InP on (111)B substrates by gas-source molecular beam epitaxy

Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy

Spontaneous emission factor in oxide confined vertical-cavity lasers

Field screening in (111)B InAsP/InP strained quantum wells

Nearly chirp-free electroabsorption modulation using InGaAs-InGaAlAs-InAlAs coupled quantum wells

InP and InAsP/InP heterostructures grown on InP (111) B substrates by gas-source molecular beam epitaxy

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