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Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

IEEE electron device letters, 2021-10, Vol.42 (10), p.1464-1467

2021

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Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

Nanoscale, 2014-06, Vol.6 (11), p.5698-5702

2014

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Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.1-6

2024

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Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4201-4207

2020

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Exploiting analogue OxRAM conductance modulation for contrast enhancement application

Electronics letters, 2020-06, Vol.56 (12), p.594-597

2020

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Mobile guide system using problem-solving strategy for museum learning: a sequential learning behavioural pattern analysis

Journal of computer assisted learning, 2010-04, Vol.26 (2), p.106-115

2010

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Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2142

2023

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FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations

Nanoscale, 2014-06, Vol.6 (11), p.5698-5702

2014

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Characterising aluminium oxide barrier layers on flexible substrates deposited by atomic layer deposition

Materials research innovations, 2014-05, Vol.18 (sup3), p.S3-38-S3-41

2014

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Processing robustness for a phenylethynyl-terminated polyimide composite

Journal of applied polymer science, 2006-05, Vol.100 (4), p.3212-3221

Hou, T. H.

2006

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Hygrothermal aging of composite single lap shear specimens comprised of AF-555M adhesive and T800H/3900-2 adherends

International journal of adhesion and adhesives, 2012-12, Vol.39, p.1-7

2012

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Double-vacuum-bag technology for volatile management in composite fabrication

Polymer composites, 2008-08, Vol.29 (8), p.906-914

2008

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Fermi-Level Pinning in Nanocrystal Memories

IEEE electron device letters, 2007-02, Vol.28 (2), p.103-106

2007

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Boundary-based corner detection using eigenvalues of covariance matrices

Pattern recognition letters, 1999, Vol.20 (1), p.31-40

1999

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Simulation study of total ionizing dose effect of gamma radiation on 15 nm bulk FinFET

Journal of instrumentation, 2023-10, Vol.18 (10), p.P10027

2023

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Processing and Properties of IM7/PETI Composites

Journal of composite materials, 1996-01, Vol.30 (1), p.109-122

1996

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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric \text}\text}\mathrm for Quantum Computing Applications

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

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Processing and Properties of a Phenolic Composite System

Journal of reinforced plastics and composites, 2006-03, Vol.25 (5), p.495-502

2006

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Correlation between Access Polarization and High Endurance (˜ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P9-1-P9-4

2022

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Behavior of volatile depletion for LaRC™-PETI-5 amide acid/N-methylpyrrolidinone solution

Journal of applied polymer science, 2003-11, Vol.90 (7), p.1906-1916

2003

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First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Applied physics letters, 2003-07, Vol.83 (2), p.308-310

2003

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Applying Skype in English as a Foreign Language Instruction: Effect on Students’ Speaking Errors

Advances in Web-Based Learning – ICWL 2013, 2013, p.312-319

2013

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Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

Exploiting analogue OxRAM conductance modulation for contrast enhancement application

Mobile guide system using problem-solving strategy for museum learning: a sequential learning behavioural pattern analysis

Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations

Characterising aluminium oxide barrier layers on flexible substrates deposited by atomic layer deposition

Processing robustness for a phenylethynyl-terminated polyimide composite

Hygrothermal aging of composite single lap shear specimens comprised of AF-555M adhesive and T800H/3900-2 adherends

Double-vacuum-bag technology for volatile management in composite fabrication

Fermi-Level Pinning in Nanocrystal Memories

Boundary-based corner detection using eigenvalues of covariance matrices

Simulation study of total ionizing dose effect of gamma radiation on 15 nm bulk FinFET

Processing and Properties of IM7/PETI Composites

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric \text}\text}\mathrm for Quantum Computing Applications

Processing and Properties of a Phenolic Composite System

Correlation between Access Polarization and High Endurance (˜ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2

Behavior of volatile depletion for LaRC™-PETI-5 amide acid/N-methylpyrrolidinone solution

First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Applying Skype in English as a Foreign Language Instruction: Effect on Students’ Speaking Errors

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