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Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Atomic-Level Analysis of Sub-5-nm-Thick Hf0.5Zr0.5O2 and Characterization of Nearly Hysteresis-Free Ferroelectric FinFET

IEEE electron device letters, 2019-08, Vol.40 (8), p.1233-1236

2019

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Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

IEEE electron device letters, 2021-12, Vol.42 (12), p.1727-1730

2021

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Suspended Diamond-Shaped Nanowire With Four Facets for High-Performance Ge Gate-All-Around FETs

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3837-3843

2016

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32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1808-1813

2016

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High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

Nanomaterials (Basel, Switzerland), 2023-04, Vol.13 (8), p.1310

2023

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3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.408-412

2022

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High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2054-2060

2017

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Investigation of 5-nm-Thick Hf0.5Zr0.5O2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.1033-1037

2019

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Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

IEEE journal of the Electron Devices Society, 2016-09, Vol.4 (5), p.286-293

2016

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3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process

IEEE electron device letters, 2024-10, Vol.45 (10), p.2013-2016

2024

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Low-temperature self-assembly of copper phthalocyanine nanofibers

Organic electronics, 2006-10, Vol.7 (5), p.428-434

2006

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Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance

ECS journal of solid state science and technology, 2021-06, Vol.10 (6), p.65002

2021

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High-performance p-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions

IEEE electron device letters, 2003-02, Vol.24 (2), p.102-104

2003

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Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO

2023 Silicon Nanoelectronics Workshop (SNW), 2023, p.127-128

2023

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Fabrication and characterization of three-dimensional all metallic photonic crystals for near infrared applications

Applied physics letters, 2009-01, Vol.94 (4), p.041122-041122-3

2009

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Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor

Japanese Journal of Applied Physics, 2002-06, Vol.41 (Part 2, No. 6A), p.L626-L628

2002

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Growth enhancement and field emission characteristics of one-dimensional 3,4,9,10-perylenetetracarboxylic dianhydride nanostructures on pillared titanium substrate

Organic electronics, 2007-10, Vol.8 (5), p.505-512

2007

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High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.6.2.1-6.2.4

2015

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Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four facets by dry etch technology

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.15.1.1-15.1.4

2015

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High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization

IEEE electron device letters, 2024-10, p.1-1

2024

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SiGe/Si Superlattice Ferroelectric HfZrO2 ΩFET and CMOS Inverter with SSmin,n = 62.4 mV/dec, ION/IOFF > 1.0 × 107, and Voltage Gain = 111.4 V/V

IEEE electron device letters, 2024-02, p.1-1

2024

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SiGe/Si Superlattice Ferroelectric HfZrO 2 ΩFET and CMOS Inverter With SS min,n = 62.4 mV/dec, I ON /I OFF > 1.0 × 10 7 , and Voltage Gain = 111.4 V/V

IEEE electron device letters, 2024-02, Vol.45 (2), p.260-263

2024

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High-Reliability HfO 2 /ZrO 2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization

IEEE electron device letters, 2024, p.1-1

2024

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Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor

Atomic-Level Analysis of Sub-5-nm-Thick Hf0.5Zr0.5O2 and Characterization of Nearly Hysteresis-Free Ferroelectric FinFET

Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

Suspended Diamond-Shaped Nanowire With Four Facets for High-Performance Ge Gate-All-Around FETs

32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO

High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications

Investigation of 5-nm-Thick Hf0.5Zr0.5O2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope

Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process

Low-temperature self-assembly of copper phthalocyanine nanofibers

Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance

High-performance p-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions

Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO

Fabrication and characterization of three-dimensional all metallic photonic crystals for near infrared applications

Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor

Growth enhancement and field emission characteristics of one-dimensional 3,4,9,10-perylenetetracarboxylic dianhydride nanostructures on pillared titanium substrate

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four facets by dry etch technology

High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization

SiGe/Si Superlattice Ferroelectric HfZrO2 ΩFET and CMOS Inverter with SSmin,n = 62.4 mV/dec, ION/IOFF > 1.0 × 107, and Voltage Gain = 111.4 V/V

SiGe/Si Superlattice Ferroelectric HfZrO 2 ΩFET and CMOS Inverter With SS min,n = 62.4 mV/dec, I ON /I OFF > 1.0 × 10 7 , and Voltage Gain = 111.4 V/V

High-Reliability HfO 2 /ZrO 2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization

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