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Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional

Materials science forum, 2011-03, Vol.679-680, p.261-264

2011

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Hyperfine coupling of point defects in semiconductors by hybrid density functional calculations: The role of core spin polarization

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (7), Article 075202

2013

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The mechanism of defect creation and passivation at the SiC/SiO2 interface

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6242-6253

2007

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The mechanism of defect creation and passivation at the SiC/SiO2 interface

Journal of physics. D, Applied physics, 2008-02, Vol.41, p.049801

2008

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Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations

Materials science forum, 2014, Vol.778-780, p.285-288

2014

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The mechanism of defect creation and passivation at the SiC/SiO2 interface: Wide band gap semiconductors

Journal of physics. D, Applied physics, 2007, Vol.40 (20), p.6242-6253

2007

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The mechanism of defect creation and passivation at the SiC/SiO 2 interface

Journal of physics. D, Applied physics, 2008-02, Vol.41 (4), p.49801-49801

2008

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The mechanism of defect creation and passivation at the SiC/SiO 2 interface

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6242-6253

2007

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Theoretical Study of Defects in Silicon Carbide and at the Silicon Dioxide Interface

Hornos, Tamás

2008

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The PANDORA Study: Prevalence and Outcome of Acute Hypoxemic Respiratory Failure in the Pre-COVID-19 Era

Critical care explorations, 2022-05, Vol.4 (5), p.e0684-e0684

2022

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Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional

Hyperfine coupling of point defects in semiconductors by hybrid density functional calculations: The role of core spin polarization

The mechanism of defect creation and passivation at the SiC/SiO2 interface

The mechanism of defect creation and passivation at the SiC/SiO2 interface

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations

The mechanism of defect creation and passivation at the SiC/SiO2 interface: Wide band gap semiconductors

The mechanism of defect creation and passivation at the SiC/SiO 2 interface

The mechanism of defect creation and passivation at the SiC/SiO 2 interface

Theoretical Study of Defects in Silicon Carbide and at the Silicon Dioxide Interface

Predicting ICU Mortality in Acute Respiratory Distress Syndrome Patients Using Machine Learning: The Predicting Outcome and STratifiCation of severity in ARDS (POSTCARDS) Study

The PANDORA Study: Prevalence and Outcome of Acute Hypoxemic Respiratory Failure in the Pre-COVID-19 Era

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