UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

Jpn J Appl Phys, 2011-02, Vol.50 (2), p.021001-021001-7

2011

Volltextzugriff (PDF)

Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

Jpn J Appl Phys, 2010-08, Vol.49 (8), p.080201-080201-3

2010

Volltextzugriff (PDF)

Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography

Journal of applied physics, 2017-12, Vol.122 (22)

2017

Volltextzugriff (PDF)

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100213-1-100213-10

2014

Volltextzugriff (PDF)

Accurate measurement of electric potentials in biased GaAs compound semiconductors by phase-shifting electron holography

Microscopy, 2019-04, Vol.68 (2), p.159-166

2019

Volltextzugriff (PDF)

Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures

Physica status solidi. C, 2012-06, Vol.9 (6), p.1356-1360

2012

Volltextzugriff (PDF)

Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation

Applied physics express, 2011-02, Vol.4 (2), p.21002

2011

Volltextzugriff (PDF)

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

Jpn J Appl Phys, 2012-06, Vol.51 (6), p.060201-060201-3

2012

Volltextzugriff (PDF)

A XANES Study of Natural Oxide Films on Plated Tin

2018 IEEE Holm Conference on Electrical Contacts, 2018, p.130-135

2018

Volltextzugriff (PDF)

Precise Potential Observation of a Biased GaAs p-n Junction by in situ Phase-shifting Electron Holography

Materia Japan, 2019/02/01, Vol.58(2), pp.101-101

2019

Volltextzugriff (PDF)

Interface state characterization of ALD‐Al 2 O 3 /GaN and ALD‐Al 2 O 3 /AlGaN/GaN structures

Physica status solidi. C, 2012-06, Vol.9 (6), p.1356-1360

2012

Volltextzugriff (PDF)

Effects of Cl 2 -Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al 2 O 3 /AlGaN/GaN Heterostructures

Applied physics express, 2013-01, Vol.6 (1), p.16502

2013

Volltextzugriff (PDF)

Microstructure of fretting debris on tin-plated terminals

2016 IEEE 62nd Holm Conference on Electrical Contacts (Holm), 2016, p.141-145

2016

Volltextzugriff (PDF)

Process Conditions for Improvement of Electrical Properties of Al 2 O 3 /n-GaN Structures Prepared by Atomic Layer Deposition

Japanese Journal of Applied Physics, 2010-08, Vol.49 (8R), p.80201

2010

Volltextzugriff (PDF)

Capacitance–Voltage Characteristics of Al 2 O 3 /AlGaN/GaN Structures and State Density Distribution at Al 2 O 3 /AlGaN Interface

Japanese Journal of Applied Physics, 2011-02, Vol.50 (2R), p.21001

2011

Volltextzugriff (PDF)

Capacitance–Voltage Characteristics of Al 2 O 3 /AlGaN/GaN Structures and State Density Distribution at Al 2 O 3 /AlGaN Interface

Japanese Journal of Applied Physics, 2011-02, Vol.50 (2R), p.21001

2011

Volltextzugriff (PDF)

電圧印加時GaAs p-n接合の高精度電子線ホログラフィーその場観察

まてりあ, 2019/02/01, Vol.58(2), pp.101-101

2019

Volltextzugriff (PDF)

Interface Properties of Al 2 O 3 /n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

Japanese Journal of Applied Physics, 2012-06, Vol.51 (6R), p.60201

2012

Volltextzugriff (PDF)

Interface Properties of Al 2 O 3 /n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

Japanese Journal of Applied Physics, 2012-06, Vol.51 (6R), p.60201

2012

Volltextzugriff (PDF)

Control of insulated gate interfaces on AlGaN/GaN heterostructures for power devices

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 2013, p.143-146

2013

Volltextzugriff (PDF)

Genome-wide assessment of genetic risk loci for childhood acute lymphoblastic leukemia in Japanese patients

Haematologica (Roma), 2024-04, Vol.109 (4), p.1247

2024

Volltextzugriff (PDF)

Full Three-Dimensional Seismic Response Analysis of Underground Structures with Large Complex Cross Sections and Two-Step Analysis Method for Reducing the Computational Costs

Journal of earthquake and tsunami, 2016-12, Vol.10 (5), p.1640016

2016

Volltextzugriff (PDF)

P-63. Construction of gingival epithelium and gingival vascular network for observation of bacterial invasion into gingival tissue

Alternatives to Animal Testing and Experimentation, 2023-12, Vol.28 (suppl), p.141-141

2023

Volltextzugriff (PDF)

Information Sharing via Projection Function for Coexistence of Robot and Human

Autonomous robots, 2001-05, Vol.10 (3), p.267-277

2001

Volltextzugriff (PDF)

1 – 24 von 24

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(18)
Mit Volltextzugriff
(19)

Publikationsform

Artikel
(21)
Tagungsberichte
(3)

Sprache

Englisch
(22)
Japanisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(13)
Physical Sciences
(8)
Physics
(7)
Physics, Applied
(7)
Technology
(4)
P-N Junction
(3)
Contacts
(2)
Cooling Focused Ion Beam
(2)
Electron Beam Holography
(2)
Engineering
(2)
Engineering, Electrical & Electronic
(2)
Fretting
(2)
General Engineering
(2)
General Physics And Astronomy
(2)
Plating
(2)
Terminal
(2)
Tin Oxide
(2)
Tin-Coated
(2)
Absorption
(1)
Al2o3
(1)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Accurate measurement of electric potentials in biased GaAs compound semiconductors by phase-shifting electron holography

Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures

Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

A XANES Study of Natural Oxide Films on Plated Tin

Precise Potential Observation of a Biased GaAs p-n Junction by in situ Phase-shifting Electron Holography

Interface state characterization of ALD‐Al 2 O 3 /GaN and ALD‐Al 2 O 3 /AlGaN/GaN structures

Effects of Cl 2 -Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al 2 O 3 /AlGaN/GaN Heterostructures

Microstructure of fretting debris on tin-plated terminals

Process Conditions for Improvement of Electrical Properties of Al 2 O 3 /n-GaN Structures Prepared by Atomic Layer Deposition

Capacitance–Voltage Characteristics of Al 2 O 3 /AlGaN/GaN Structures and State Density Distribution at Al 2 O 3 /AlGaN Interface

Capacitance–Voltage Characteristics of Al 2 O 3 /AlGaN/GaN Structures and State Density Distribution at Al 2 O 3 /AlGaN Interface

電圧印加時GaAs p-n接合の高精度電子線ホログラフィーその場観察

Interface Properties of Al 2 O 3 /n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

Interface Properties of Al 2 O 3 /n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

Control of insulated gate interfaces on AlGaN/GaN heterostructures for power devices

Genome-wide assessment of genetic risk loci for childhood acute lymphoblastic leukemia in Japanese patients

Full Three-Dimensional Seismic Response Analysis of Underground Structures with Large Complex Cross Sections and Two-Step Analysis Method for Reducing the Computational Costs

P-63. Construction of gingival epithelium and gingival vascular network for observation of bacterial invasion into gingival tissue

Information Sharing via Projection Function for Coexistence of Robot and Human

Suchergebnisse filtern