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Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

IEEE journal of quantum electronics, 2009-01, Vol.45 (1), p.66-78

2009

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IEEE_Xplore

Synthesis of wide bandgap Ga2O3 (Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.1002-1009

2016

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Optical gain characteristics of staggered InGaN quantum wells lasers

Journal of applied physics, 2010-06, Vol.107 (11), p.113110-113110-12

2010

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Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Applied physics letters, 2010-09, Vol.97 (13), p.131114-131114-3

2010

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Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes

Journal of applied physics, 2018-07, Vol.124 (3)

2018

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Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

Applied physics letters, 2010-09, Vol.97 (11), p.111105-111105-3

2010

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Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

Applied physics letters, 2011-04, Vol.98 (17)

2011

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Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1218-1225

2009

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IEEE_Xplore

Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films

Crystal growth & design, 2018-08, Vol.18 (8), p.4495-4502

2018

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Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

IEEE journal of quantum electronics, 2008-06, Vol.44 (6), p.573-580

2008

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IEEE_Xplore

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

Applied physics letters, 2011-04, Vol.98 (15), p.151115-151115-3

2011

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Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters

APL materials, 2019-02, Vol.7 (2), p.022514-022514-8

2019

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Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

Journal of display technology, 2013-04, Vol.9 (4), p.212-225

2013

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IEEE_Xplore

Improved Prediction of Aqueous Solubility of Novel Compounds by Going Deeper With Deep Learning

Frontiers in oncology, 2020-02, Vol.10, p.121-121

2020

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Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Solid-state electronics, 2010-10, Vol.54 (10), p.1119-1124

2010

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Self-consistent gain analysis of type-II ' W ' InGaN-GaNAs quantum well lasers

Journal of applied physics, 2008-08, Vol.104 (4), p.043104-043104-7

2008

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Study of intersubband transitions in GaN-ZnGeN2 coupled quantum wells

Journal of applied physics, 2017-03, Vol.121 (9)

2017

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Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 205207

2015

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Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

APL materials, 2020-03, Vol.8 (3), p.031104-031104-8

2020

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Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates

APL materials, 2021-10, Vol.9 (10), p.101109-101109-15

2021

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Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition

Journal of applied physics, 2019-04, Vol.125 (13)

2019

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Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1104-1114

2009

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IEEE_Xplore

Discontinued Drugs for the Treatment of Cardiovascular Disease from 2016 to 2018

International journal of molecular sciences, 2019-09, Vol.20 (18), p.4513

2019

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Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3

Journal of applied physics, 2021-06, Vol.129 (22)

2021

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Type-II InGaN-GaNAs quantum wells for lasers applications

Applied physics letters, 2008-01, Vol.92 (1), p.011104-011104-3

2008

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Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Synthesis of wide bandgap Ga2O3 (Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition

Optical gain characteristics of staggered InGaN quantum wells lasers

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters

Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

Improved Prediction of Aqueous Solubility of Novel Compounds by Going Deeper With Deep Learning

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Self-consistent gain analysis of type-II ' W ' InGaN-GaNAs quantum well lasers

Study of intersubband transitions in GaN-ZnGeN2 coupled quantum wells

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates

Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm

Discontinued Drugs for the Treatment of Cardiovascular Disease from 2016 to 2018

Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3

Type-II InGaN-GaNAs quantum wells for lasers applications

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