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Statistical Noise Analysis of CMOS Image Sensors in Dark Condition

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2481-2488

2009

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A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3325-3335

2007

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A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions

Journal of applied physics, 2006-06, Vol.99 (12), p.123719-123719-10

2006

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A new charge pump without degradation in threshold voltage due to body effect [memory applications]

IEEE journal of solid-state circuits, 2000-08, Vol.35 (8), p.1227-1230

2000

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Prediction of data retention time distribution of DRAM by physics-based statistical Simulation

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2422-2429

2005

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Physics-Based Analysis and Simulation of Phase Noise in Oscillators

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2195-2201

2006

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A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAM

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2344-2350

2006

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Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.554-560

2005

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A new weight redistribution technique for electron-electron scattering in the MC simulation

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1448-1454

2004

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Partial SOI type isolation for improvement of DRAM cell transistor characteristics

IEEE electron device letters, 2005-05, Vol.26 (5), p.332-334

2005

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An anomalous device degradation of SOI narrow width devices caused by STI edge influence

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.605-612

2002

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Physics-Based Analysis and Simulation of 1/f Noise in MOSFETs Under Large-Signal Operation

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.1110-1118

2010

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Electron mobility behavior in extremely thin SOI MOSFET's

IEEE electron device letters, 1995-11, Vol.16 (11), p.527-529

1995

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Statistical analysis of random telegraph noise in CMOS image sensors

2008 International Conference on Simulation of Semiconductor Processes and Devices, 2008, p.77-80

2008

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A novel bipolar imaging device - BASIC (BAse stored imager in CMOS Process)

IEEE transactions on electron devices, 2003-11, Vol.50 (11), p.2189-2195

2003

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Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits

IEEE transactions on microwave theory and techniques, 1998-10, Vol.46 (10), p.1436-1443

1998

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Physics-Based Analysis and Simulation of \hbox/f Noise in MOSFETs Under Large-Signal Operation

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.1110-1118

2010

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Investigation of noise in silicon nanowire transistors through quantum simulations

2008 International Conference on Simulation of Semiconductor Processes and Devices, 2008, p.73-76

2008

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A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

IEEE microwave and wireless components letters, 2002-09, Vol.12 (9), p.342-344

2002

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Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs

IEEE electron device letters, 2002-05, Vol.23 (5), p.288-290

2002

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Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

IEEE electron device letters, 2001-09, Vol.22 (9), p.449-451

2001

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SOI MOSFET structure with a junction-type body contact for suppression of pass gate leakage

IEEE transactions on electron devices, 2001-07, Vol.48 (7), p.1360-1365

2001

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A charge pumping device with a potential barrier using inversion charge transfer

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1216-1221

2001

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A dual body SOI structure for mixed analog-digital mode circuits

IEEE transactions on electron devices, 2000-08, Vol.47 (8), p.1617-1623

2000

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Simple frequency-domain analysis of MOSFET-including nonquasi-static effect

IEEE transactions on computer-aided design of integrated circuits and systems, 2001-07, Vol.20 (7), p.867-876

2001

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Statistical Noise Analysis of CMOS Image Sensors in Dark Condition

A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor

A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions

A new charge pump without degradation in threshold voltage due to body effect [memory applications]

Prediction of data retention time distribution of DRAM by physics-based statistical Simulation

Physics-Based Analysis and Simulation of Phase Noise in Oscillators

A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAM

Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

A new weight redistribution technique for electron-electron scattering in the MC simulation

Partial SOI type isolation for improvement of DRAM cell transistor characteristics

An anomalous device degradation of SOI narrow width devices caused by STI edge influence

Physics-Based Analysis and Simulation of 1/f Noise in MOSFETs Under Large-Signal Operation

Electron mobility behavior in extremely thin SOI MOSFET's

Statistical analysis of random telegraph noise in CMOS image sensors

A novel bipolar imaging device - BASIC (BAse stored imager in CMOS Process)

Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits

Physics-Based Analysis and Simulation of \hbox/f Noise in MOSFETs Under Large-Signal Operation

Investigation of noise in silicon nanowire transistors through quantum simulations

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs

Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

SOI MOSFET structure with a junction-type body contact for suppression of pass gate leakage

A charge pumping device with a potential barrier using inversion charge transfer

A dual body SOI structure for mixed analog-digital mode circuits

Simple frequency-domain analysis of MOSFET-including nonquasi-static effect

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