UB Paderborn / Katalog / Suche / in CDI

Effects of crystallinity and impurities on the electrical conductivity of Li–La–Zr–O thin films

Thin solid films, 2015-02, Vol.576 (C), p.55-60

2015

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Reaction Sintering of ZnO-AI2O3

Journal of the American Ceramic Society, 1995-12, Vol.78 (12), p.3217-3224

1995

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Use of neural network to characterize a low pressure temperature effect on refractive property of silicon nitride film deposited by PECVD

IEEE transactions on plasma science, 2004-02, Vol.32 (1), p.84-89

2004

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IEEE_Xplore

Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Journal of the Society for Information Display, 2011-09, Vol.19 (9), p.623-626

2011

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Fabrication of Nanocrystalline Silicon Gratings Embedded within a Silicon Nitride Matrix by Femtosecond Laser-Induced Crystallization

Japanese Journal of Applied Physics, 2010-01, Vol.49 (1), p.015502-015502-4

2010

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Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD

한국세라믹학회지, 2015, 52(3), 358, pp.209-214

2015

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Characteristics of bottom-gate low temperature nanocrystalline silicon thin film transistor fabricated by hydrogen annealing of gate dielectric layer

Thin solid films, 2010-09, Vol.518 (22), p.6311-6314

2010

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Formation of nanocrystals embedded in a silicon nitride film at a low temperature (⩽200 °C)

Scripta materialia, 2008-12, Vol.59 (11), p.1190-1192

2008

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Facile fabrication of YSZ/GDC multi-layers by using a split target in pulsed laser deposition and their structural and electrical properties

Journal of electroceramics, 2014-10, Vol.33 (1-2), p.25-30

2014

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P-93: Silicon Nanocrystals Embedded in Silicon-rich Silicon Nitride Films for Application of Light Emitting Diodes in Flexible Display

SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1595-1598

2010

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Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (⩽200 °C)

Scripta materialia, 2009-04, Vol.60 (8), p.703-705

2009

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Optoelectronic Characteristics of HgSe Nanoparticle Films Spin-Coated on Flexible Plastic Substrates

Japanese Journal of Applied Physics, 2010-03, Vol.49 (3), p.030210-030210-3

2010

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Gate Insulator Inhomogeneity in Thin Film Transistors Having a Polycrystalline Silicon Layer Prepared Directly by Catalytic Chemical Vapor Deposition at a Low Temperature

Japanese Journal of Applied Physics, 2007-12, Vol.46 (12L), p.L1228

2007

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High-rate, low-temperature deposition of multifunctional nano-crystalline silicon nitride films

Journal of Information Display, 2010, 11(3), , pp.109-112

2010

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Use of Neural Network to Control a Refractive Index of SiN Film Deposited by Plasma Enhanced Chemical Vapor Deposition

Plasma chemistry and plasma processing, 2004-03, Vol.24 (1), p.29-40

2004

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Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200 °C

Current applied physics, 2009-03, Vol.9 (2), p.e108-e110

2009

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Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

Microelectronic engineering, 2008-12, Vol.85 (12), p.2370-2373

2008

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Influence of filament geometry on film uniformity in a catalytic CVD system for low-temperature processing

Journal of Information Display, 2014, 15(1), , pp.25-30

2014

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Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (<150 °C) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

Japanese Journal of Applied Physics, 2006-03, Vol.45 (3L), p.L227

2006

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Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes

Microelectronic engineering, 2008-12, Vol.85 (12), p.2366-2369

2008

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Plasma control using neural network and optical emission spectroscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-03, Vol.23 (2), p.355-358

2005

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Development of a low temperature doping technique for applications in poly-si TFT on plastic substrates

Journal of Information Display, 2003-01, Vol.4 (3), p.17-21

2003

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Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD

Hanʼguk Seramik Hakhoe chi, 2015, Vol.52 (3), p.209-214

2015

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Direct Deposition of Poly-Si Films at a High Rate by Using Catalytic CVD at a Low Temperature (180 ¨?C)

Journal of the Korean Physical Society, 2009, 54(1), , pp.478-483

2009

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Wavelet characterization of plasma etch nonuniformity

Thin solid films, 2004-11, Vol.467 (1), p.162-167

2004

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Effects of crystallinity and impurities on the electrical conductivity of Li–La–Zr–O thin films

Reaction Sintering of ZnO-AI2O3

Use of neural network to characterize a low pressure temperature effect on refractive property of silicon nitride film deposited by PECVD

Annealing effect of low-temperature (<150°C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Fabrication of Nanocrystalline Silicon Gratings Embedded within a Silicon Nitride Matrix by Femtosecond Laser-Induced Crystallization

Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD

Characteristics of bottom-gate low temperature nanocrystalline silicon thin film transistor fabricated by hydrogen annealing of gate dielectric layer

Formation of nanocrystals embedded in a silicon nitride film at a low temperature (⩽200 °C)

Facile fabrication of YSZ/GDC multi-layers by using a split target in pulsed laser deposition and their structural and electrical properties

P-93: Silicon Nanocrystals Embedded in Silicon-rich Silicon Nitride Films for Application of Light Emitting Diodes in Flexible Display

Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (⩽200 °C)

Optoelectronic Characteristics of HgSe Nanoparticle Films Spin-Coated on Flexible Plastic Substrates

Gate Insulator Inhomogeneity in Thin Film Transistors Having a Polycrystalline Silicon Layer Prepared Directly by Catalytic Chemical Vapor Deposition at a Low Temperature

High-rate, low-temperature deposition of multifunctional nano-crystalline silicon nitride films

Use of Neural Network to Control a Refractive Index of SiN Film Deposited by Plasma Enhanced Chemical Vapor Deposition

Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200 °C

Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

Influence of filament geometry on film uniformity in a catalytic CVD system for low-temperature processing

Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (<150 °C) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes

Plasma control using neural network and optical emission spectroscopy

Development of a low temperature doping technique for applications in poly-si TFT on plastic substrates

Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD

Direct Deposition of Poly-Si Films at a High Rate by Using Catalytic CVD at a Low Temperature (180 ¨?C)

Wavelet characterization of plasma etch nonuniformity

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