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The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor

Journal of applied physics, 2023-02, Vol.133 (7)

2023

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Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

Nanotechnology, 2014-03, Vol.25 (12), p.125201-125201

2014

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Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

IEEE electron device letters, 2013-09, Vol.34 (9), p.1181-1183

2013

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PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-01, Vol.9 (18), p.6006-6013

2021

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Effects of different Bacillus licheniformis and Bacillus subtilis ratios on nutrient digestibility, fecal microflora, and gas emissions of growing pigs

한국축산학회지, 2022, 64(2), , pp.291-301

2022

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Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates

Physica status solidi. PSS-RRL. Rapid research letters, 2013-07, Vol.7 (7), p.493-496

2013

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Effects of different Bacillus licheniformis and Bacillus subtilis ratios on nutrient digestibility, fecal microflora, and gas emissions of growing pigs

Journal of animal science and technology, 2022-03, Vol.64 (2), p.291-301

2022

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Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel 1×1 crossbar array resistive random access memory cells

Microelectronic engineering, 2014-08, Vol.126, p.169-172

2014

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Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-07, Vol.31 (4)

2013

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Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET Characteristics of Phase-Change Memory in Cross-Point Structure

IEEE electron device letters, 2021-12, Vol.42 (12), p.1759-1761

2021

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Amorphous Ge-Se-S chalcogenide alloys via post plasma sulfurization of atomic layer deposition GeSe for ovonic threshold switch applications

Journal of alloys and compounds, 2023-06, Vol.947, p.169514, Article 169514

2023

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Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Thin solid films, 2015-05, Vol.583, p.81-85

2015

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Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Semiconductor science and technology, 2012-12, Vol.27 (12), p.125020

2012

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Forming-free SiN-based resistive switching memory prepared by RF sputtering

Physica status solidi. A, Applications and materials science, 2013-09, Vol.210 (9), p.1822-1827

2013

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Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Materials research bulletin, 2013-12, Vol.48 (12), p.5080-5083

2013

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PE-ALD of GeS amorphous chalcogenide alloys for OTS applications

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-05, Vol.9 (18), p.66-613

2021

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PE-ALD of Ge 1−x S x amorphous chalcogenide alloys for OTS applications

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-05, Vol.9 (18), p.6006-6013

2021

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Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

Physica status solidi. PSS-RRL. Rapid research letters, 2014-03, Vol.8 (3), p.239-242

2014

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Forming-free SiN-based resistive switching memory prepared by RF sputtering: Forming-free SiN-based resistive switching memory

Physica status solidi. A, Applications and materials science, 2013-09, Vol.210 (9), p.1822-1827

2013

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Forming-free Si N -based resistive switching memory prepared by RF sputtering

Physica status solidi. A, Applications and materials science, 2013-09, Vol.210 (9), p.1822-1827

2013

Volltextzugriff (PDF)

Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel lxl crossbar array resistive random access memory cells

Microelectronic engineering, 2014-08, Vol.126, p.169-172

2014

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Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfO x /Pt capacitors

Physica status solidi. PSS-RRL. Rapid research letters, 2013-07, Vol.7 (7), p.497-500

2013

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Improved resistive switching phenomena observed in SiN x ‐based resistive switching memory through oxygen doping process

Physica status solidi. PSS-RRL. Rapid research letters, 2014-03, Vol.8 (3), p.239-242

2014

Volltextzugriff (PDF)

Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

Physica status solidi. PSS-RRL. Rapid research letters, 2013-07, Vol.7 (7), p.497-500

2013

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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications

Effects of different Bacillus licheniformis and Bacillus subtilis ratios on nutrient digestibility, fecal microflora, and gas emissions of growing pigs

Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates

Effects of different Bacillus licheniformis and Bacillus subtilis ratios on nutrient digestibility, fecal microflora, and gas emissions of growing pigs

Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel 1×1 crossbar array resistive random access memory cells

Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET Characteristics of Phase-Change Memory in Cross-Point Structure

Amorphous Ge-Se-S chalcogenide alloys via post plasma sulfurization of atomic layer deposition GeSe for ovonic threshold switch applications

Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Forming-free SiN-based resistive switching memory prepared by RF sputtering

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

PE-ALD of GeS amorphous chalcogenide alloys for OTS applications

PE-ALD of Ge 1−x S x amorphous chalcogenide alloys for OTS applications

Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

Forming-free SiN-based resistive switching memory prepared by RF sputtering: Forming-free SiN-based resistive switching memory

Forming-free Si N -based resistive switching memory prepared by RF sputtering

Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel lxl crossbar array resistive random access memory cells

Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfO x /Pt capacitors

Improved resistive switching phenomena observed in SiN x ‐based resistive switching memory through oxygen doping process

Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

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