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Formation and stability of silicides on polycrystalline silicon

Materials science & engineering. R, Reports : a review journal, 1996-02, Vol.16 (2), p.43-96

1996

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Salicides: materials, scaling and manufacturability issues for future integrated circuits ( invited)

Microelectronic engineering, 2000, Vol.50 (1), p.87-101

2000

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Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies

Thin solid films, 1998-05, Vol.320 (1), p.110-121

1998

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Composition control and growth mechanisms in solid phase epitaxy of GeSi in Ge Si1−/Pd2Si/Si systems

Thin solid films, 1993-02, Vol.223 (2), p.235-241

1993

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Composition control and growth mechanisms in solid phase epitaxy of GeSi in Ge xSi 1− x/Pd 2Si/Si systems

Thin solid films, 1993, Vol.223 (2), p.235-241

1993

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CURRENT SITUATION AND ADVANCES IN POST-HARVEST STORAGE AND TRANSPORTATION TECHNOLOGIES OF LONGAN FRUIT

Acta horticulturae, 2001 (558), p.343-351

2001

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Scaled CMOS technologies with low sheet resistance at 0.06-μm gate lengths

IEEE electron device letters, 1998-05, Vol.19 (5), p.151-153

1998

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Thermal stability of silicide on polycrystalline Si

Thin solid films, 1994-12, Vol.253 (1-2), p.479-484

1994

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Materials aspects of Ti and Co silicidation of narrow polysilicon lines

Thin solid films, 1996-12, Vol.290, p.473-476

1996

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Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2

Thin solid films, 1998-11, Vol.332 (1-2), p.404-411

1998

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A STUDY OF THE SHELF-LIFE OF COLD-STORED LONGAN FRUIT

Acta horticulturae, 2001 (558), p.353-357

2001

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Thermal stability of Al/barrier/TiSi x multilayer structures

Thin solid films, 1998, Vol.320 (1), p.20-25

1998

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Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys

Journal of applied physics, 1992-02, Vol.71 (4), p.1768-1773

1992

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A Novel Process for Fabricating Conformal and Stable TiN‐Based Barrier Films

Journal of the Electrochemical Society, 1996-12, Vol.143 (12), p.L279-L280

1996

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Thermal stability of Al/barrier/TiSix multilayer structures

Thin solid films, 1998-05, Vol.320 (1), p.20-25

1998

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Thermal and ion induced silicide formation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.414-419

1989

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Thermally and ion-induced phase formation in a Pd/Ge bilayer

Journal of applied physics, 1989-10, Vol.66 (8), p.3600-3603

1989

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Ion mixing in amorphous and crystalline Si/Ge layered structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.989-993

1991

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Ion mixing of near-noble monosilicides with Si substrates

Journal of applied physics, 1989-05, Vol.65 (9), p.3395-3399

1989

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Thermally and ion-induced reaction between Si and binary metallic alloys

Journal of applied physics, 1988-03, Vol.63 (5), p.1749-1753

1988

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A 65 nm CMOS technology for mobile and digital signal processing applications

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.665-668

2004

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Study Of Integration Issues Of Ti Salicide Process With Preamorphization For Sub-0.18 /spl mu/m Gate Length CMOS Technologies

Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications, 1997, p.23-27

1997

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A sub-0.1 /spl mu/m gate length CMOS technology for high performance (1.5 V) and low power (1.0 V)

International Electron Devices Meeting. Technical Digest, 1996, p.563-566

1996

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CoSi/sub 2/ with low diode leakage and low sheet resistance at 0.065 /spl mu/m gate length

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.107-110

1997

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Sources and distribution of carbon within the Yangtze River system

Estuarine, coastal and shelf science, 2007, Vol.71 (1), p.13-25

2007

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Formation and stability of silicides on polycrystalline silicon

Salicides: materials, scaling and manufacturability issues for future integrated circuits ( invited)

Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies

Composition control and growth mechanisms in solid phase epitaxy of GeSi in Ge Si1−/Pd2Si/Si systems

Composition control and growth mechanisms in solid phase epitaxy of GeSi in Ge xSi 1− x/Pd 2Si/Si systems

CURRENT SITUATION AND ADVANCES IN POST-HARVEST STORAGE AND TRANSPORTATION TECHNOLOGIES OF LONGAN FRUIT

Scaled CMOS technologies with low sheet resistance at 0.06-μm gate lengths

Thermal stability of silicide on polycrystalline Si

Materials aspects of Ti and Co silicidation of narrow polysilicon lines

Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2

A STUDY OF THE SHELF-LIFE OF COLD-STORED LONGAN FRUIT

Thermal stability of Al/barrier/TiSi x multilayer structures

Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys

A Novel Process for Fabricating Conformal and Stable TiN‐Based Barrier Films

Thermal stability of Al/barrier/TiSix multilayer structures

Thermal and ion induced silicide formation

Thermally and ion-induced phase formation in a Pd/Ge bilayer

Ion mixing in amorphous and crystalline Si/Ge layered structures

Ion mixing of near-noble monosilicides with Si substrates

Thermally and ion-induced reaction between Si and binary metallic alloys

A 65 nm CMOS technology for mobile and digital signal processing applications

Study Of Integration Issues Of Ti Salicide Process With Preamorphization For Sub-0.18 /spl mu/m Gate Length CMOS Technologies

A sub-0.1 /spl mu/m gate length CMOS technology for high performance (1.5 V) and low power (1.0 V)

CoSi/sub 2/ with low diode leakage and low sheet resistance at 0.065 /spl mu/m gate length

Sources and distribution of carbon within the Yangtze River system

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