UB Paderborn / Katalog / Suche / in CDI

Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

Journal of physics. D, Applied physics, 2016-05, Vol.49 (21), p.215303-215309

2016

Volltextzugriff (PDF)

Poly(3,4-ethylenedioxythiophene) Derived from Poly(ionic liquid) for the Use as Hole-Injecting Material in Organic Light-Emitting Diodes

Macromolecular rapid communications., 2009-09, Vol.30 (17), p.1477-1482

2009

Volltextzugriff (PDF)

Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique

Surface & coatings technology, 2013-09, Vol.231, p.131-134

2013

Volltextzugriff (PDF)

Digital Interventions for Reducing Loneliness and Depression in Korean College Students: A Mixed-Methods Evaluation (Preprint)

JMIR formative research, 2024-03

2024

Volltextzugriff (PDF)

Low-temperature fabrication (<150 °C) of amorphous IGZO TFTs via high density CVD and superimposed rf/dc magnetron sputtering

Current applied physics, 2012-12, Vol.12, p.S48-S51

2012

Volltextzugriff (PDF)

Reactive particle beam based deposition process of nano-crystalline silicon thin film at low temperature for the flexible AM-OLED backplane

Thin solid films, 2010-09, Vol.518 (22), p.6299-6303

2010

Volltextzugriff (PDF)

A single gas barrier layer of high-density Al2O3 formed by neutral beam-assisted sputtering at room temperature

Thin solid films, 2019-03, Vol.674, p.52-57

2019

Volltextzugriff (PDF)

The deposition of amorphous carbon thin films for hard mask applications by reactive particle beam assisted sputtering process

Thin solid films, 2009-05, Vol.517 (14), p.3999-4002

2009

Volltextzugriff (PDF)

14.8% perovskite solar cells employing carbazole derivatives as hole transporting materials

Chemical communications (Cambridge, England), 2014-11, Vol.50 (91), p.14161-14163

2014

Volltextzugriff (PDF)

Development of higher performance indium tin oxide films at a very low temperature (< 80 °C) by the neutral beam-assisted sputtering process

Thin solid films, 2011-01, Vol.519 (7), p.2098-2102

2011

Volltextzugriff (PDF)

Study of the inductively coupled plasma assisted DC magnetron sputtering (ICPDMS) during ITO deposition

Thin solid films, 2009-05, Vol.517 (14), p.4165-4169

2009

Volltextzugriff (PDF)

Depletion-mode TFT made of low-temperature poly-Si

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1260-1262

2006

Volltextzugriff (PDF)

Novel Carbazole-Based Hole-Transporting Materials with Star-Shaped Chemical Structures for Perovskite-Sensitized Solar Cells

ACS applied materials & interfaces, 2015-10, Vol.7 (40), p.22213-22217

2015

Volltextzugriff (PDF)

Stoichiometric silicon nitride thin films for gas barrier, with applications to flexible and stretchable OLED encapsulation

Applied physics letters, 2021-05, Vol.118 (18)

2021

Volltextzugriff (PDF)

Etch mechanism of In2O3 and SnO2 thin films in HBr-based inductively coupled plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-03, Vol.28 (2), p.226-231

2010

Volltextzugriff (PDF)

Proposal of Fast-Moving Ball Actuator Mode for Electronic-Paper Displays

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3), p.03CC10-03CC10-5

2011

Volltextzugriff (PDF)

Proposal of Fast-Moving Ball Actuator Mode for Electronic-Paper Displays

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3S), p.3

2011

Volltextzugriff (PDF)

Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas

Jpn J Appl Phys, 2010-08, Vol.49 (8), p.08JB04-08JB04-6

2010

Volltextzugriff (PDF)

New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.0560-0562

2013

Volltextzugriff (PDF)

Analysis of deformation of thin polyimide film by pre-strained silicone elastomer

Materials today communications, 2024-03, Vol.38, p.107728, Article 107728

2024

Volltextzugriff (PDF)

New approaches for micro-controlling of oxygen dopant contents in silicon-based thin films with application to multi-band gap solar cells

Current applied physics, 2012-12, Vol.12, p.S64-S70

2012

Volltextzugriff (PDF)

Influence of argon neutral beam energy on the structural properties of amorphous carbon thin films grown by neutral particle beam assisted sputtering

Thin solid films, 2011-08, Vol.519 (20), p.6703-6707

2011

Volltextzugriff (PDF)

Effect of the high vacuum seasoning process on poly (4-vinyl phenol) as Organic Gate Dielectric in all solution-processed organic thin-film transistors

Thin solid films, 2012-10, Vol.521, p.235-238

2012

Volltextzugriff (PDF)

14.8% perovskite solar cells employing carbazole derivatives as hole transporting materialsElectronic supplementary information (ESI) available: Preparation and characterization of HTMs, solar cell fabrication, device characterization, cyclic voltammograms and DSC/TGA analysis of HTMs. See DOI: 10.1039/c4cc06716a

2014-10

Volltextzugriff (PDF)

Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature

Current Applied Physics, 2014, 14(6), , pp.901-904

2014

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

Poly(3,4-ethylenedioxythiophene) Derived from Poly(ionic liquid) for the Use as Hole-Injecting Material in Organic Light-Emitting Diodes

Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique

Digital Interventions for Reducing Loneliness and Depression in Korean College Students: A Mixed-Methods Evaluation (Preprint)

Low-temperature fabrication (<150 °C) of amorphous IGZO TFTs via high density CVD and superimposed rf/dc magnetron sputtering

Reactive particle beam based deposition process of nano-crystalline silicon thin film at low temperature for the flexible AM-OLED backplane

A single gas barrier layer of high-density Al2O3 formed by neutral beam-assisted sputtering at room temperature

The deposition of amorphous carbon thin films for hard mask applications by reactive particle beam assisted sputtering process

14.8% perovskite solar cells employing carbazole derivatives as hole transporting materials

Development of higher performance indium tin oxide films at a very low temperature (< 80 °C) by the neutral beam-assisted sputtering process

Study of the inductively coupled plasma assisted DC magnetron sputtering (ICPDMS) during ITO deposition

Depletion-mode TFT made of low-temperature poly-Si

Novel Carbazole-Based Hole-Transporting Materials with Star-Shaped Chemical Structures for Perovskite-Sensitized Solar Cells

Stoichiometric silicon nitride thin films for gas barrier, with applications to flexible and stretchable OLED encapsulation

Etch mechanism of In2O3 and SnO2 thin films in HBr-based inductively coupled plasmas

Proposal of Fast-Moving Ball Actuator Mode for Electronic-Paper Displays

Proposal of Fast-Moving Ball Actuator Mode for Electronic-Paper Displays

Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas

New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD

Analysis of deformation of thin polyimide film by pre-strained silicone elastomer

New approaches for micro-controlling of oxygen dopant contents in silicon-based thin films with application to multi-band gap solar cells

Influence of argon neutral beam energy on the structural properties of amorphous carbon thin films grown by neutral particle beam assisted sputtering

Effect of the high vacuum seasoning process on poly (4-vinyl phenol) as Organic Gate Dielectric in all solution-processed organic thin-film transistors

Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature

Suchergebnisse filtern