UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Fully depleted charge‐coupled device design and technology development

Astronomische Nachrichten, 2023-10, Vol.344 (8-9), p.n/a

Holland, Stephen E.

2023

Volltextzugriff (PDF)

Multi-amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy

Publications of the Astronomical Society of the Pacific, 2024-09, Vol.136 (9), p.95002

2024

Volltextzugriff (PDF)

Single-Quantum Measurement With a Multiple-Amplifier Sensing Charge-Coupled Device

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3732-3738

2024

Volltextzugriff (PDF)

Search by the SENSEI Experiment for Millicharged Particles Produced in the NuMI Beam

Physical review letters, 2024-08, Vol.133 (7), p.071801, Article 071801

2024

Volltextzugriff (PDF)

Near-100% Quantum Efficiency of Delta Doped Large-Format UV-NIR Silicon Imagers

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3402-3406

2008

Volltextzugriff (PDF)

MOS technology development on 150 mm Ge wafers

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 2021, p.1936-1940

2021

Volltextzugriff (PDF)

Back-Side Readout Silicon Photomultiplier

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2187-2191

2012

Volltextzugriff (PDF)

Discrete Multivariate Analysis Theory and Practice: Theory and Practice

1. Aufl., 2007

Volltextzugriff (PDF)

SENSEI: Characterization of Single-Electron Events Using a Skipper Charge-Coupled Device

Physical review applied, 2022-01, Vol.17 (1), Article 014022

2022

Volltextzugriff (PDF)

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

IEEE transactions on electron devices, 2003-01, Vol.50 (1), p.225-238

2003

Volltextzugriff (PDF)

Skipper Charge-Coupled Device for Low-Energy-Threshold Particle Experiments above Ground

Physical review applied, 2022-04, Vol.17 (4), Article 044050

2022

Volltextzugriff (PDF)

Sub-electron readout noise in a Skipper CCD fabricated on high resistivity silicon

Experimental astronomy, 2012-07, Vol.34 (1), p.43-64

2012

Volltextzugriff (PDF)

Device Design for a 12.3-Megapixel, Fully Depleted, Back-Illuminated, High-Voltage Compatible Charge-Coupled Device

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2612-2622

2009

Volltextzugriff (PDF)

Device Design for a 12.3-Megapixel, Fully Depleted, Back-Illuminated, High-Voltage Compatible : SOLID-STATE IMAGE SENSORS

IEEE transactions on electron devices, 2009, Vol.56 (11), p.2612-2622

2009

Volltextzugriff (PDF)

Reduced Charge Diffusion in Thick, Fully Depleted CCDs With Enhanced Red Sensitivity

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3877-3881

2006

Volltextzugriff (PDF)

Direct detection of 0.1 - 20 keV electrons with delta doped, fully depleted, high purity silicon p - i - n diode arrays

Applied physics letters, 2006-10, Vol.89 (18), p.182114-182114-3

2006

Volltextzugriff (PDF)

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

Applied physics letters, 2005-12, Vol.87 (25)

2005

Volltextzugriff (PDF)

Making the grade: five tips for school district audits

The CPA journal (1975), 2016-04, p.12

Holland, Stephen E

2016

Volltextzugriff (PDF)

Making the Grade Five Tips for School District Audits

The CPA journal (1975), 2016-04, Vol.86 (4), p.36

Holland, Stephen E

2016

Volltextzugriff (PDF)

Enhanced quantum efficiency of high-purity silicon imaging detectorsby ultralow temperature surface modification using Sb doping

Applied physics letters, 2005-12, Vol.87 (25), p.254101-254101-3

2005

Volltextzugriff (PDF)

Direct detection of 0.1–20keV electrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays

Applied physics letters, 2006-10, Vol.89 (18)

2006

Volltextzugriff (PDF)

Back-side readout silicon photomultiplier

2011 IEEE Nuclear Science Symposium Conference Record, 2011, p.1669-1673

2011

Volltextzugriff (PDF)

Improved Spatial Resolution in Thick, Fully-Depleted CCDs withEnhanced Red Sensitivity

IEEE transactions on nuclear science, 2006-03, Vol.2

2006

Volltextzugriff (PDF)

Electrical breakdown in thin gate and tunneling oxides

IEEE transactions on electron devices, 1985-02, Vol.32 (2), p.413-422

1985

Volltextzugriff (PDF)

A compact 16-module camera using 64-pixel CsI(Tl)/Si P-I-Nphotodiode imaging modules

IEEE transactions on nuclear science, 2003-05, Vol.49 (5)

2003

Volltextzugriff (PDF)

1 – 25 von 426

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(372)
Mit Volltextzugriff
(356)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(422)
Russisch
(2)
Spanisch
(1)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(7)

Menü

Weitere Dienste

Einstellungen

Fully depleted charge‐coupled device design and technology development

Multi-amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy

Single-Quantum Measurement With a Multiple-Amplifier Sensing Charge-Coupled Device

Search by the SENSEI Experiment for Millicharged Particles Produced in the NuMI Beam

Near-100% Quantum Efficiency of Delta Doped Large-Format UV-NIR Silicon Imagers

MOS technology development on 150 mm Ge wafers

Back-Side Readout Silicon Photomultiplier

Discrete Multivariate Analysis Theory and Practice: Theory and Practice

SENSEI: Characterization of Single-Electron Events Using a Skipper Charge-Coupled Device

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Skipper Charge-Coupled Device for Low-Energy-Threshold Particle Experiments above Ground

Sub-electron readout noise in a Skipper CCD fabricated on high resistivity silicon

Device Design for a 12.3-Megapixel, Fully Depleted, Back-Illuminated, High-Voltage Compatible Charge-Coupled Device

Device Design for a 12.3-Megapixel, Fully Depleted, Back-Illuminated, High-Voltage Compatible : SOLID-STATE IMAGE SENSORS

Reduced Charge Diffusion in Thick, Fully Depleted CCDs With Enhanced Red Sensitivity

Direct detection of 0.1 - 20 keV electrons with delta doped, fully depleted, high purity silicon p - i - n diode arrays

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

Making the grade: five tips for school district audits

Making the Grade Five Tips for School District Audits

Enhanced quantum efficiency of high-purity silicon imaging detectorsby ultralow temperature surface modification using Sb doping

Direct detection of 0.1–20keV electrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays

Back-side readout silicon photomultiplier

Improved Spatial Resolution in Thick, Fully-Depleted CCDs withEnhanced Red Sensitivity

Electrical breakdown in thin gate and tunneling oxides

A compact 16-module camera using 64-pixel CsI(Tl)/Si P-I-Nphotodiode imaging modules

Suchergebnisse filtern