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Forward Body Biasing as a Bulk-Si CMOS Technology Scaling Strategy

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2657-2664

2008

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Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography

Applied surface science, 2012-10, Vol.259, p.726-730

2012

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MOSFET hot-carrier reliability improvement by forward-body bias

IEEE electron device letters, 2006-07, Vol.27 (7), p.605-608

2006

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MOSFET design for forward body biasing scheme

IEEE electron device letters, 2006-05, Vol.27 (5), p.387-389

2006

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High-preformance diamond surface-channel field-effect transistors and their operation mechanism

Diamond and related materials, 1999, Vol.8 (2), p.927-933

1999

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High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

IEEE transactions on electron devices, 2002-12, Vol.49 (12), p.2263-2270

2002

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Randomized Head-to-Head Comparison of Pitavastatin, Atorvastatin, and Rosuvastatin for Safety and Efficacy (Quantity and Quality of LDL): The PATROL Trial

Circulation Journal, 2011, Vol.75(6), pp.1493-1505

2011

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Enhancement/depletion MESFETs of diamond and their logic circuits

Diamond and related materials, 1997-03, Vol.6 (2), p.339-343

1997

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Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond

2008 Symposium on VLSI Technology, 2008, p.112-113

2008

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SODEL FET: novel channel and source/drain profile engineering schemes by selective Si epitaxial growth technology

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1401-1408

2004

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Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds

Japanese Journal of Applied Physics, 1996-09, Vol.35 (9B), p.L1165-L1168

1996

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Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3778-3786

2011

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Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

Solid-state electronics, 1999-08, Vol.43 (8), p.1465-1471

1999

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Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

Diamond and related materials, 1997-04, Vol.6 (5), p.865-868

1997

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A hp22 nm node low operating power (LOP) technology with sub-10 nm gate length planar bulk CMOS devices

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.84-85

2004

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25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1302-1310

2011

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Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Applied physics letters, 1998-04, Vol.72 (15), p.1878-1880

1998

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150 GHz FMAX with high drain breakdown voltage immunity by multi gate oxide dual work-function (MGO-DWF)-MO SFET

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.25.8.1-25.8.4

2015

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Scaling strategy for low power RF applications with multi gate oxide Dual Work function (DWF) MOSFETs utilizing self-aligned integration scheme

2013 Symposium on VLSI Technology, 2013, p.T144-T145

2013

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MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces

Materials science forum, 1998-02, Vol.264-268, p.977-980

1998

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Quality Evaluation on Composition, Texture and Flavor of Deordorized Soybean

Nippon Shokuhin Kagaku Kogaku Kaishi, 2005, Vol.52(5), pp.236-240

2005

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Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Analysis of creep test on gel-type precessed food, mainly sausage

Nihon Shokuhin Kagaku Kōgaku kaishi, 2005-11, Vol.52 (11)

2005

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Effects of salt and polyphosphate on physical properties of meat gel treated with microbial transglutaminase

Nippon Shokuhin Kagaku Kogaku Kaishi, 2006/02/15, Vol.53(2), pp.109-113

2006

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Application and device modeling of diamond FET using surface semiconductive layers

Electronics & communications in Japan. Part 2, Electronics, 1998-07, Vol.81 (7), p.19-27

1998

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Forward Body Biasing as a Bulk-Si CMOS Technology Scaling Strategy

Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography

MOSFET hot-carrier reliability improvement by forward-body bias

MOSFET design for forward body biasing scheme

High-preformance diamond surface-channel field-effect transistors and their operation mechanism

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

Randomized Head-to-Head Comparison of Pitavastatin, Atorvastatin, and Rosuvastatin for Safety and Efficacy (Quantity and Quality of LDL): The PATROL Trial

Enhancement/depletion MESFETs of diamond and their logic circuits

Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond

SODEL FET: novel channel and source/drain profile engineering schemes by selective Si epitaxial growth technology

Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds

Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

A hp22 nm node low operating power (LOP) technology with sub-10 nm gate length planar bulk CMOS devices

25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)

Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

150 GHz FMAX with high drain breakdown voltage immunity by multi gate oxide dual work-function (MGO-DWF)-MO SFET

Scaling strategy for low power RF applications with multi gate oxide Dual Work function (DWF) MOSFETs utilizing self-aligned integration scheme

MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces

Quality Evaluation on Composition, Texture and Flavor of Deordorized Soybean

Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling

Analysis of creep test on gel-type precessed food, mainly sausage

Effects of salt and polyphosphate on physical properties of meat gel treated with microbial transglutaminase

Application and device modeling of diamond FET using surface semiconductive layers

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