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First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

IEEE electron device letters, 2016-05, Vol.37 (5), p.553-555

2016

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IEEE_Xplore

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

IEEE photonics technology letters, 2018-09, Vol.30 (17), p.1567-1570

2018

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IEEE_Xplore

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

IEEE electron device letters, 2006-01, Vol.27 (1), p.7-9

2006

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IEEE_Xplore

3-D Printed Monolithic GRIN Dielectric-Loaded Double-Ridged Horn Antennas

IEEE transactions on antennas and propagation, 2020-01, Vol.68 (1), p.533-539

2020

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IEEE_Xplore

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

IEEE electron device letters, 2011-02, Vol.32 (2), p.143-145

2011

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IEEE_Xplore

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Semiconductor science and technology, 2017-03, Vol.32 (3), p.35011

2017

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Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1054-1059

2013

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IEEE_Xplore

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

IEEE electron device letters, 2011-11, Vol.32 (11), p.1537-1539

2011

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IEEE_Xplore

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

Solid-state electronics, 2013-12, Vol.90, p.73-78

2013

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Monte Carlo simulator for the design optimization of low-noise HEMTs

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1950-1956

2000

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IEEE_Xplore

435mS/mm transconductance for AlGaN/ GaN HEMTs on HR-Si substrate with optimised gate-source spacing

Electronics letters, 2012-01, Vol.48 (2), p.69-71

2012

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RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Electronics letters, 2011-02, Vol.47 (3), p.212-214

2011

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The effect of gate length variation on InAlGaN GaN HFET device characteristics

Semiconductor science and technology, 2012-03, Vol.27 (3), p.35009-1-4

2012

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AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

IEEE electron device letters, 2004-07, Vol.25 (7), p.453-455

2004

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IEEE_Xplore

Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.250-253

2000

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Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

Electronics letters, 2010-06, Vol.46 (13), p.949-950

2010

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AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX

IEEE electron device letters, 2013, Vol.34, p.36-38

2013

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AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2843-2848

2007

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IEEE_Xplore

First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

Electronics letters, 2008, Vol.44 (3), p.238-239

2008

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High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates

IEEE electron device letters, 2004-04, Vol.25 (4), p.167-169

2004

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IEEE_Xplore

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Electronics letters, 2005-01, Vol.41 (1), p.46-47

2005

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Journal of crystal growth, 2008-11, Vol.310 (23), p.5232-5236

2008

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Les systèmes neuroinspirés appliqués à la vision artificielle : pédagogie et interdisciplinarité

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2022-06, Vol.21, p.1023

2022

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Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

IEEE microwave and wireless components letters, 2003-03, Vol.13 (3), p.99-101

2003

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IEEE_Xplore

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

Journal of crystal growth, 2004-12, Vol.272 (1), p.305-311

2004

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First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

3-D Printed Monolithic GRIN Dielectric-Loaded Double-Ridged Horn Antennas

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

Monte Carlo simulator for the design optimization of low-noise HEMTs

435mS/mm transconductance for AlGaN/ GaN HEMTs on HR-Si substrate with optimised gate-source spacing

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

The effect of gate length variation on InAlGaN GaN HFET device characteristics

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Les systèmes neuroinspirés appliqués à la vision artificielle : pédagogie et interdisciplinarité

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

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