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Large fraction of crystal directions leads to ion channeling

Physical review. B, 2016-12, Vol.94 (21), Article 214109

2016

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Assessment of surface potential models by molecular dynamics simulations of atom ejection from (100)-Si surfaces

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-05, Vol.303, p.165-169

Hobler, G.

2013

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Absence of a Crystal Direction Regime in which Sputtering Corresponds to Amorphous Material

Physical review letters, 2020-11, Vol.125 (22), p.225502-225502, Article 225502

2020

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Publisher's Note: Large fraction of crystal directions leads to ion channeling [Phys. Rev. B 94 , 214109 (2016)]

Physical review. B, 2017-03, Vol.95 (9), p.99901, Article 099901

2017

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Sputtering of silicon at glancing incidence

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-05, Vol.303, p.142-147

2013

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Dynamic binary collision simulation of focused ion beam milling of deep trenches

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-07, Vol.269 (14), p.1609-1613

2011

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Crystal-orientation-dependent physical sputtering from four elemental metals

Nuclear materials and energy, 2023-12, Vol.37, p.101559, Article 101559

2023

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Channeling maps for Si ions in Si: Assessing the binary collision approximation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-06, Vol.449, p.17-21

2019

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Dependence of ion channeling on relative atomic number in compounds

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2018-11, Vol.435, p.61-69

2018

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Inverse modeling of FIB milling by dose profile optimization

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-12, Vol.341, p.77-83

2014

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Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots

Journal of applied physics, 2002-10, Vol.92 (7), p.4037-4042

2002

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Amorphous pocket model based on the modified heat transport equation and local lattice collapse

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1229-1231

2009

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Status and open problems in modeling of as-implanted damage in silicon

Materials science in semiconductor processing, 2003-02, Vol.6 (1), p.1-14

2003

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On the useful range of application of molecular dynamics simulations in the recoil interaction approximation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-06, Vol.180 (1), p.203-208

2001

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Ab initio calculations of the interaction between native point defects in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.368-371

2005

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Ion bombardment induced atom redistribution in amorphous targets: MD versus BCA

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-05, Vol.447, p.30-33

2019

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Amorphous pocket model for silicon based on molecular dynamics simulations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206 (Complete), p.81-84

2003

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FIBSIM – dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-06, Vol.180 (1), p.125-129

2001

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Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-04, Vol.202 (Complete), p.114-119

2003

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Modeling of amorphous pocket formation in silicon by numerical solution of the heat transport equation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-01, Vol.228 (1-4), p.226-229

2005

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Range evaluation in SIMS depth profiles of Er-implantations in silicon

Applied surface science, 2005-09, Vol.252 (1), p.271-277

2005

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On the missing single collision peak in low energy heavy ion scattering

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-11, Vol.544, p.165123, Article 165123

2023

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Critical angles and low-energy limits to ion channeling in silicon

Radiation effects and defects in solids, 1996-01, Vol.139 (1), p.21-85

Hobler, G.

1996

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Theoretical estimate of the low-energy limit to ion channeling

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-07, Vol.115 (1), p.323-327

Hobler, G.

1996

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Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga + irradiation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-09, Vol.21 (5), p.1644-1648

2003

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Large fraction of crystal directions leads to ion channeling

Assessment of surface potential models by molecular dynamics simulations of atom ejection from (100)-Si surfaces

Absence of a Crystal Direction Regime in which Sputtering Corresponds to Amorphous Material

Publisher's Note: Large fraction of crystal directions leads to ion channeling [Phys. Rev. B 94 , 214109 (2016)]

Sputtering of silicon at glancing incidence

Dynamic binary collision simulation of focused ion beam milling of deep trenches

Crystal-orientation-dependent physical sputtering from four elemental metals

Channeling maps for Si ions in Si: Assessing the binary collision approximation

Dependence of ion channeling on relative atomic number in compounds

Inverse modeling of FIB milling by dose profile optimization

Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots

Amorphous pocket model based on the modified heat transport equation and local lattice collapse

Status and open problems in modeling of as-implanted damage in silicon

On the useful range of application of molecular dynamics simulations in the recoil interaction approximation

Ab initio calculations of the interaction between native point defects in silicon

Ion bombardment induced atom redistribution in amorphous targets: MD versus BCA

Amorphous pocket model for silicon based on molecular dynamics simulations

FIBSIM – dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling

Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation

Modeling of amorphous pocket formation in silicon by numerical solution of the heat transport equation

Range evaluation in SIMS depth profiles of Er-implantations in silicon

On the missing single collision peak in low energy heavy ion scattering

Critical angles and low-energy limits to ion channeling in silicon

Theoretical estimate of the low-energy limit to ion channeling

Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga + irradiation

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