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Training Medical House Officers

Medical education, 1999-01, Vol.33 (1), p.63-64

1999

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GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

IEEE electron device letters, 2019-06, Vol.40 (6), p.881-884

2019

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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3552-3559

2024

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Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6940-6947

2022

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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

IEEE electron device letters, 2024-05, Vol.45 (5), p.873-876

2024

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PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates

Journal of electronic materials, 2024-06, Vol.53 (6), p.2798-2805

2024

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A Simple Edge Termination Design for Vertical GaN P-N Diodes

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5096-5103

2022

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates

Journal of electronic materials, 2024-06, Vol.53 (6), p.2798-2805

2024

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Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.328-335

2023

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LAPAROSCOPIC RADICAL NEPHROURETERECTOMY FOR UPPER TRACT TRANSITIONAL CELL CARCINOMA: THE CLEVELAND CLINIC EXPERIENCE

The Journal of urology, 2000-11, Vol.164 (5), p.1513-1522

2000

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Laparoscopic radical nephrectomy in 100 patients: A single center experience from the United States

Cancer, 2001-10, Vol.92 (7), p.1843-1855

2001

Volltextzugriff (PDF)

Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes

2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 2024, p.2663-2669

2024

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Laparoscopic renal cryoablation in 32 patients

Urology (Ridgewood, N.J.), 2000-11, Vol.56 (5), p.748-753

2000

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Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.478-482

2019

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RETROPERITONEAL LAPAROSCOPIC RADICAL NEPHRECTOMY: THE CLEVELAND CLINIC EXPERIENCE

The Journal of urology, 2000-06, Vol.163 (6), p.1665-1670

2000

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Immunological Response to Renal Cryoablation in an In Vivo Orthotopic Renal Cell Carcinoma Murine Model

The Journal of urology, 2010, Vol.183 (1), p.333-338

2010

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Characterization and Modeling of a 1.3 kV Vertical GaN Diode

2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 2022, p.928-935

2022

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Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2014-10, Vol.35 (10), p.1013-1015

2014

Volltextzugriff (PDF)

GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

IEEE electron device letters, 2019-06, Vol.40 (6), p.881-884

2019

Volltextzugriff (PDF)

Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023, p.2496-2502

2023

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Researching COVID to enhance recovery (RECOVER) pediatric study protocol: Rationale, objectives and design

PloS one, 2024-01, Vol.19 (5)

2024

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AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices

2022 Device Research Conference (DRC), 2022, p.1-2

2022

Volltextzugriff (PDF)

X-ray analysis of HIV-1 proteinase at 2.7 resolution confirms structural homology among retroviral enzymes

Nature (London), 1989-11, Vol.342 (6247), p.299-302

1989

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Training Medical House Officers

GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates

A Simple Edge Termination Design for Vertical GaN P-N Diodes

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates

Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

LAPAROSCOPIC RADICAL NEPHROURETERECTOMY FOR UPPER TRACT TRANSITIONAL CELL CARCINOMA: THE CLEVELAND CLINIC EXPERIENCE

Laparoscopic radical nephrectomy in 100 patients: A single center experience from the United States

Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes

Laparoscopic renal cryoablation in 32 patients

Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

RETROPERITONEAL LAPAROSCOPIC RADICAL NEPHRECTOMY: THE CLEVELAND CLINIC EXPERIENCE

Immunological Response to Renal Cryoablation in an In Vivo Orthotopic Renal Cell Carcinoma Murine Model

Characterization and Modeling of a 1.3 kV Vertical GaN Diode

Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy

Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode

Researching COVID to enhance recovery (RECOVER) pediatric study protocol: Rationale, objectives and design

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices

X-ray analysis of HIV-1 proteinase at 2.7 resolution confirms structural homology among retroviral enzymes

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