UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs

Sensors (Basel, Switzerland), 2023-03, Vol.23 (7), p.3465

2023

Volltextzugriff (PDF)

β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis

Physica status solidi. A, Applications and materials science, 2022-06, Vol.219 (12), p.n/a

2022

Volltextzugriff (PDF)

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

IEEE electron device letters, 2017-08, Vol.38 (8), p.1090-1093

2017

Volltextzugriff (PDF)

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Materials, 2022-03, Vol.15 (6), p.2097

2022

Volltextzugriff (PDF)

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Micromachines (Basel), 2023-11, Vol.14 (11), p.2005

2023

Volltextzugriff (PDF)

Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process

Materials science in semiconductor processing, 2024-08, Vol.179, p.108483, Article 108483

2024

Volltextzugriff (PDF)

Recessed AlGaN/GaN Heterojunction-Based Hydrogen Sensor Operated by Reverse Bias Mode

IEEE sensors journal, 2021-01, Vol.21 (2), p.1244-1249

2021

Volltextzugriff (PDF)

Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer

Micro and nanostructures (2022), 2024-05, Vol.189, p.207802, Article 207802

2024

Volltextzugriff (PDF)

Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors

Materials, 2022-10, Vol.15 (21), p.7475

2022

Volltextzugriff (PDF)

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Materials, 2020-03, Vol.13 (7), p.1538

2020

Volltextzugriff (PDF)

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

Micromachines (Basel), 2021-05, Vol.12 (5), p.537

2021

Volltextzugriff (PDF)

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.581-586

2024

Volltextzugriff (PDF)

On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer

Applied physics letters, 2022-01, Vol.120 (1)

2022

Volltextzugriff (PDF)

Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads

IEEE electron device letters, 2019-01, Vol.40 (1), p.107-110

2019

Volltextzugriff (PDF)

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

IEEE electron device letters, 2013-02, Vol.34 (2), p.214-216

2013

Volltextzugriff (PDF)

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2926-2931

2006

Volltextzugriff (PDF)

Impact Ionization Coefficients in 4H-SiC

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1984-1990

2008

Volltextzugriff (PDF)

Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer

Micromachines (Basel), 2022-07, Vol.13 (8), p.1185

2022

Volltextzugriff (PDF)

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals (Basel), 2021-04, Vol.11 (4), p.405

2021

Volltextzugriff (PDF)

Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy

Results in physics, 2022-09, Vol.40, p.105857, Article 105857

2022

Volltextzugriff (PDF)

4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

IEEE photonics technology letters, 2008-09, Vol.20 (18), p.1551-1553

2008

Volltextzugriff (PDF)

Waveform inversion in the Laplace domain

Geophysical journal international, 2008-06, Vol.173 (3), p.922-931

2008

Volltextzugriff (PDF)

Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

IEEE electron device letters, 2016-12, Vol.37 (12), p.1613-1616

2016

Volltextzugriff (PDF)

Proton Bombardment Effects on Normally- off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.3362-3368

2015

Volltextzugriff (PDF)

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

Volltextzugriff (PDF)

1 – 25 von 639

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(484)
Mit Volltextzugriff
(530)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(368)
Physical Sciences
(162)
Life Sciences & Biomedicine
(154)
Technology
(150)
Physics
(117)
Engineering
(101)
Humans
(98)
Engineering, Electrical & Electronic
(85)
Physics, Applied
(81)
Female
(69)
Male
(67)
Materials Science
(56)
Middle Aged
(53)
Adult
(48)
Exact Sciences And Technology
(44)
Materials Science, Multidisciplinary
(44)
Chemistry
(43)
Aged
(39)
Endocrinology & Metabolism
(36)
Transistors
(34)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs

β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process

Recessed AlGaN/GaN Heterojunction-Based Hydrogen Sensor Operated by Reverse Bias Mode

Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer

Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer

Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

Impact Ionization Coefficients in 4H-SiC

Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy

4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

Waveform inversion in the Laplace domain

Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

Proton Bombardment Effects on Normally- off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Suchergebnisse filtern