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Gas Adsorption Mechanism on 2D Materials: The Hyperpolarizability Evolution Analyzed by Nonlinear Optics

Advanced functional materials, 2024-10, Vol.34 (42), p.n/a

2024

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Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS2

Advanced optical materials, 2019-01, Vol.7 (2), p.n/a

2019

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Layered MoS2 grown on c -sapphire by pulsed laser deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2015-03, Vol.9 (3), p.187-191

2015

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The Role of GaN in the Heterostructure WS2/GaN for SERS Applications

Materials, 2023-04, Vol.16 (8), p.3054

2023

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RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

IEEE electron device letters, 2019-10, Vol.40 (10), p.1662-1665

2019

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2D Niobium-Doped MoS2: Tuning the Exciton Transitions and Potential Applications

ACS applied electronic materials, 2021-06, Vol.3 (6), p.2564-2572

2021

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Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2015-10, Vol.212 (10), p.2201-2204

2015

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Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (6), p.1406

2021

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Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

Nanomaterials (Basel, Switzerland), 2022-07, Vol.12 (14), p.2435

2022

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Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Frontiers in materials, 2022-03, Vol.9

2022

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Complex Optical Conductivity of Two-Dimensional MoS2: A Striking Layer Dependency

The journal of physical chemistry letters, 2019-10, Vol.10 (20), p.6246-6252

2019

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Interfacial structure of a-plane ZnO grown on r-plane sapphire by pulsed laser deposition

Materials letters, 2013-03, Vol.94, p.165-168

2013

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Domain boundaries and growth manner of a-plane ZnO film on symmetric (001)LaAlO3 substrate

Journal of crystal growth, 2024-01, Vol.625, p.127452, Article 127452

2024

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Growth of nonpolar (112¯) ZnO films on LaAlO3 (001) substrates

Applied physics letters, 2008-09, Vol.93 (12)

2008

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Microstructure of a-plane ZnO grown on LaAlO3 (001)

Thin solid films, 2010-03, Vol.518 (11), p.2967-2970

2010

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Crystalline domain orientation of a two-dimensional WS2 film deposited on a (0001) sapphire substrate

Thin solid films, 2024-03, Vol.792, p.140250, Article 140250

2024

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Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2011-05, Vol.29 (3)

2011

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Growth of a-plane ZnO thin films on LaAlO3(100) substrate by metal-organic chemical vapor deposition

Journal of crystal growth, 2008-02, Vol.310 (4), p.777-782

2008

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Semipolar (11bar 2bar 2) ZnO thin films grown on LaAlO3-buffered LSAT (112) single crystals by pulsed laser deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2013-04, Vol.7 (4), p.293-296

2013

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Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition

Crystal research and technology (1979), 2013-05, Vol.48 (5), p.308-313

2013

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2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

Electronic Materials Letters, 2015, 11(3), , pp.352-359

2015

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Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

Electronic materials letters, 2015-03, Vol.11 (2), p.217-224

2015

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The ultra-thin AlN epitaxy on monolayer WS2 by helicon sputtering at 400 °C

Vacuum, 2023-01, Vol.207, p.111681, Article 111681

2023

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The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on ( 0 01 ) LaAlO3

Journal of crystal growth, 2010-04, Vol.312 (8), p.1175-1178

2010

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Gas Adsorption Mechanism on 2D Materials: The Hyperpolarizability Evolution Analyzed by Nonlinear Optics

Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS2

Layered MoS2 grown on c -sapphire by pulsed laser deposition

The Role of GaN in the Heterostructure WS2/GaN for SERS Applications

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

2D Niobium-Doped MoS2: Tuning the Exciton Transitions and Potential Applications

Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Complex Optical Conductivity of Two-Dimensional MoS2: A Striking Layer Dependency

Interfacial structure of a-plane ZnO grown on r-plane sapphire by pulsed laser deposition

Domain boundaries and growth manner of a-plane ZnO film on symmetric (001)LaAlO3 substrate

Growth of nonpolar (112¯) ZnO films on LaAlO3 (001) substrates

Microstructure of a-plane ZnO grown on LaAlO3 (001)

Crystalline domain orientation of a two-dimensional WS2 film deposited on a (0001) sapphire substrate

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Growth of a-plane ZnO thin films on LaAlO3(100) substrate by metal-organic chemical vapor deposition

Semipolar (11bar 2bar 2) ZnO thin films grown on LaAlO3-buffered LSAT (112) single crystals by pulsed laser deposition

Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

The ultra-thin AlN epitaxy on monolayer WS2 by helicon sputtering at 400 °C

The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on ( 0 01 ) LaAlO3

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