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Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-03, Vol.395, p.34-38

2017

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Annealing of silver implanted 6H–SiC and the diffusion of the silver

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-03, Vol.274, p.120-125

2012

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Characterisation of Cs ion implanted GaN by DLTS

Physica. B, Condensed matter, 2018-04, Vol.535, p.96-98

2018

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Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC

Applied surface science, 2019-11, Vol.493, p.1291-1298

2019

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Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis

Applied surface science, 2021-02, Vol.538, p.148099, Article 148099

2021

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Citrate sol-gel synthesis of BaAl2O4:x% Cu2+ (0 ≤ x ≤ 1) nano-phosphors: Structural, morphological and photoluminescence properties

Optical materials, 2020-11, Vol.109, p.110244, Article 110244

2020

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Deep level transient spectroscopy characterisation of Xe irradiated GaN

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-10, Vol.409, p.69-71

2017

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Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.342-346

2015

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Defects in swift heavy ion irradiated n-4H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.119-124

2019

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Design and fabrication of a chemical vapour deposition system with special reference to ZrC layer growth characteristics

Journal of the Southern African Institute of Mining and Metallurgy, 2017-10, Vol.117 (10), p.931-938

Biira, S.

2017

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Diffusion behavior of cesium in silicon carbide at T>1000°C

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-09, Vol.286, p.102-107

2012

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Diffusion of a mono-energetic implanted species with a Gaussian profile

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-09, Vol.406, p.708-713

2017

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Effect of 710 MeV Bi+51 swift heavy ions irradiation on Se pre-implanted polycrystalline SiC

Vacuum, 2024-06, Vol.224, p.113189, Article 113189

2024

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Effect of a silicon dioxide diffusion barrier layer and its sublimation on the migration of strontium implanted into SiC

Materials chemistry and physics, 2023-11, Vol.309, p.128441, Article 128441

2023

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Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2021-01, Vol.487, p.30-37

2021

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Effect of high temperature annealing and SHI irradiation on the migration behaviour of Xe implanted into glassy carbon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2021-02, Vol.489, p.11-19

2021

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Effect of radiation damage on the migration behaviour of europium implanted into polycrystalline SiC at RT, 350 °C and 600 °C

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2020-09, Vol.478, p.260-268

2020

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Effect of sequential isochronal annealing on the structure and migration behaviour of selenium-ion implanted in glassy carbon

Vacuum, 2020-12, Vol.182, p.109689, Article 109689

2020

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Effect of SHI irradiation and high temperature annealing on the microstructure of SiC implanted with Ag

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2022-01, Vol.511, p.18-29

2022

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Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN

Vacuum, 2019-05, Vol.163, p.59-68

2019

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Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.461, p.201-209

2019

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Effect of swift heavy ions irradiation on the migration behavior of strontium implanted into polycrystalline SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-07, Vol.451, p.113-121

2019

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Effect of Tb3+ concentration on the structure and optical properties of triply doped ZnAl2O4:1% Ce3+,1% Eu3+,x% Tb3+ nano-phosphors synthesized via citrate sol-gel method

Journal of molecular structure, 2019-01, Vol.1175, p.241-252

2019

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Effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.273, p.61-64

2012

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The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

Vacuum, 2016-07, Vol.129, p.161-165

2016

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Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Annealing of silver implanted 6H–SiC and the diffusion of the silver

Characterisation of Cs ion implanted GaN by DLTS

Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC

Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis

Citrate sol-gel synthesis of BaAl2O4:x% Cu2+ (0 ≤ x ≤ 1) nano-phosphors: Structural, morphological and photoluminescence properties

Deep level transient spectroscopy characterisation of Xe irradiated GaN

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Defects in swift heavy ion irradiated n-4H-SiC

Design and fabrication of a chemical vapour deposition system with special reference to ZrC layer growth characteristics

Diffusion behavior of cesium in silicon carbide at T>1000°C

Diffusion of a mono-energetic implanted species with a Gaussian profile

Effect of 710 MeV Bi+51 swift heavy ions irradiation on Se pre-implanted polycrystalline SiC

Effect of a silicon dioxide diffusion barrier layer and its sublimation on the migration of strontium implanted into SiC

Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC

Effect of high temperature annealing and SHI irradiation on the migration behaviour of Xe implanted into glassy carbon

Effect of radiation damage on the migration behaviour of europium implanted into polycrystalline SiC at RT, 350 °C and 600 °C

Effect of sequential isochronal annealing on the structure and migration behaviour of selenium-ion implanted in glassy carbon

Effect of SHI irradiation and high temperature annealing on the microstructure of SiC implanted with Ag

Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN

Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC

Effect of swift heavy ions irradiation on the migration behavior of strontium implanted into polycrystalline SiC

Effect of Tb3+ concentration on the structure and optical properties of triply doped ZnAl2O4:1% Ce3+,1% Eu3+,x% Tb3+ nano-phosphors synthesized via citrate sol-gel method

Effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C

The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

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