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Investigating the thermal stability of the chemical vapour deposited zirconium carbide layers

Journal of alloys and compounds, 2020-09, Vol.834, p.155003, Article 155003

2020

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Measurement of L-shell X-ray production cross sections in 89Y, 158Gd and 209Bi due to 0.3 MeV/u – 1.0 MeV/u 12C ions

Applied radiation and isotopes, 2021-11, Vol.177, p.109930-109930, Article 109930

2021

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Isothermal annealing of selenium (Se)-implanted silicon carbide: Structural evolution and migration behavior of implanted Se

Materials chemistry and physics, 2022-01, Vol.276, p.125334, Article 125334

2022

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The effects of varying the annealing period on the structure, morphology and optical properties of MgAl2O4:0.1% Mn2+ nanophosphors

Applied physics. A, Materials science & processing, 2020, Vol.126 (1), Article 75

2020

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Study of the effect of implantation temperature on the migration behaviour of Xe implanted into glassy carbon

Applied radiation and isotopes, 2024-04, Vol.206, p.111239-111239, Article 111239

2024

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Effects of annealing temperature on the structure and photoluminescence properties of the ZnO/ZnAl2O4/Ca5Al6O14/Ca3Al4ZnO10:0.1% Ce3+ mixed-phases nanophosphor prepared by citrate sol–gel process

Applied physics. A, Materials science & processing, 2020, Vol.126 (10), Article 821

2020

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The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

Frontiers in materials, 2023-11, Vol.10

2023

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Surface and interface structural analysis of W deposited on 6H-SiC substrates annealed in argon

RSC advances, 2017-01, Vol.7 (1), p.2-7

2017

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Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

RSC advances, 2016-01, Vol.6 (72), p.68292-6831

2016

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The Effect of Annealing Time on the Structural and Optical Properties of ZnAl2O4:0.01% Cr3+ Nanophosphor Prepared via the Sol–Gel Method

Journal of electronic materials, 2018, Vol.47 (1), p.521-529

2018

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The effects of helium, strontium, and silver triple ions implanted into SiC

Heliyon, 2023-10, Vol.9 (10), p.e20877-e20877, Article e20877

2023

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Effects of varying Sm3+ concentration on the structure, morphology and photoluminescence properties of the BaAl2O4 /CaAl2O4/Ca4Al6O13/Ca3Al2O6:x% Sm3+ (0 ≤ x ≤ 1.9) mixed phases using citrate sol-gel method

Heliyon, 2022-12, Vol.8 (12), p.e12573-e12573, Article e12573

2022

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Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Journal of physics. D, Applied physics, 2015-11, Vol.48 (46), p.465306-465312

2015

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Influence of radiation damage on xenon diffusion in silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-08, Vol.332, p.415-420

2014

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Ion beam effects of 26.0MeV Cu7+ ions in thin metallic and insulating films during Heavy Ion ERDA measurements

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-04, Vol.349, p.79-84

2015

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Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-03, Vol.371, p.263-267

2016

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Effects of Er3+ concentration on the structure and optical properties of the MgAl2O4/MgO/Sr3Al2O6/SrAl2O4 mixed phases prepared by the citrate sol gel method

Materials research express, 2020-10, Vol.7 (10), p.106302

2020

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Study of silver diffusion in silicon carbide

Journal of nuclear materials, 2009-05, Vol.389 (2), p.326-331

2009

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Influence of radiation damage on krypton diffusion in silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-07, Vol.354, p.42-46

2015

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Interfacial reactions and surface analysis of W thin film on 6H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-03, Vol.371, p.235-239

2016

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Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-07, Vol.354, p.249-254

2015

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The new Heavy Ion ERDA set up at iThemba LABS Gauteng: Multilayer thin film depth profiling using direct calculation and Monte Carlo simulation codes

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-02, Vol.296, p.54-60

2013

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Comparative study of the effect of swift heavy ion irradiation at 500 °C and annealing at 500 °C on implanted silicon carbide

RSC advances, 2016, Vol.6 (73), p.68593-68598

2016

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The effects of varying the Eu3+ concentration on the structural and optical properties of Mg1.5Al2O4.5:x% Eu3+ (0 ≤ x ≤ 2) nanophosphors prepared by sol–gel method

Nanomaterials and nanotechnology, 2018-09, Vol.8

2018

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Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.342-346

2015

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Investigating the thermal stability of the chemical vapour deposited zirconium carbide layers

Measurement of L-shell X-ray production cross sections in 89Y, 158Gd and 209Bi due to 0.3 MeV/u – 1.0 MeV/u 12C ions

Isothermal annealing of selenium (Se)-implanted silicon carbide: Structural evolution and migration behavior of implanted Se

The effects of varying the annealing period on the structure, morphology and optical properties of MgAl2O4:0.1% Mn2+ nanophosphors

Study of the effect of implantation temperature on the migration behaviour of Xe implanted into glassy carbon

Effects of annealing temperature on the structure and photoluminescence properties of the ZnO/ZnAl2O4/Ca5Al6O14/Ca3Al4ZnO10:0.1% Ce3+ mixed-phases nanophosphor prepared by citrate sol–gel process

The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

Surface and interface structural analysis of W deposited on 6H-SiC substrates annealed in argon

Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

The Effect of Annealing Time on the Structural and Optical Properties of ZnAl2O4:0.01% Cr3+ Nanophosphor Prepared via the Sol–Gel Method

The effects of helium, strontium, and silver triple ions implanted into SiC

Effects of varying Sm3+ concentration on the structure, morphology and photoluminescence properties of the BaAl2O4 /CaAl2O4/Ca4Al6O13/Ca3Al2O6:x% Sm3+ (0 ≤ x ≤ 1.9) mixed phases using citrate sol-gel method

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Influence of radiation damage on xenon diffusion in silicon carbide

Ion beam effects of 26.0MeV Cu7+ ions in thin metallic and insulating films during Heavy Ion ERDA measurements

Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Effects of Er3+ concentration on the structure and optical properties of the MgAl2O4/MgO/Sr3Al2O6/SrAl2O4 mixed phases prepared by the citrate sol gel method

Study of silver diffusion in silicon carbide

Influence of radiation damage on krypton diffusion in silicon carbide

Interfacial reactions and surface analysis of W thin film on 6H-SiC

Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation

The new Heavy Ion ERDA set up at iThemba LABS Gauteng: Multilayer thin film depth profiling using direct calculation and Monte Carlo simulation codes

Comparative study of the effect of swift heavy ion irradiation at 500 °C and annealing at 500 °C on implanted silicon carbide

The effects of varying the Eu3+ concentration on the structural and optical properties of Mg1.5Al2O4.5:x% Eu3+ (0 ≤ x ≤ 2) nanophosphors prepared by sol–gel method

Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

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