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A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices

Crystals (Basel), 2023-03, Vol.13 (3), p.387

Hite, Jennifer K.

2023

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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

IEEE electron device letters, 2014-08, Vol.35 (8), p.826-828

2014

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IEEE_Xplore

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

ACS nano, 2010-02, Vol.4 (2), p.1108-1114

2010

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Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

Crystals (Basel), 2023-04, Vol.13 (5), p.736

2023

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Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

IEEE transactions on semiconductor manufacturing, 2016-11, Vol.29 (4), p.343-348

2016

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IEEE_Xplore

Electron Backscatter Diffraction Study of Hexagonal Boron Nitride Growth on Cu Single-Crystal Substrates

ACS applied materials & interfaces, 2015-07, Vol.7 (28), p.15200-15205

2015

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GaN Power Devices - Current Status and Future Directions

The Electrochemical Society interface, 2018-01, Vol.27 (4), p.43-47

2018

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Chemical etching behaviors of semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) gallium nitride films

Physical chemistry chemical physics : PCCP, 2014-08, Vol.16 (3), p.1578-15783

2014

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Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Applied physics letters, 2012-07, Vol.101 (3)

2012

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Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3

Applied physics letters, 2019-06, Vol.114 (24)

2019

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Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy

Ultramicroscopy, 2023-11, Vol.253, p.113819-113819, Article 113819

2023

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Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Thin solid films, 2015-08, Vol.589, p.47-51

2015

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Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride Substrates

Langmuir, 2010-07, Vol.26 (13), p.10725-10730

2010

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Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

Journal of crystal growth, 2011-07, Vol.326 (1), p.65-68

2011

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Frontiers in Electronics and Photonics

The Electrochemical Society interface, 2018-01, Vol.27 (4), p.41-41

Hite, Jennifer K.

2018

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Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene

Nano letters, 2010-10, Vol.10 (10), p.3962-3965

2010

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Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films

Applied physics letters, 2023-11, Vol.123 (22)

2023

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Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Journal of physics. D, Applied physics, 2021-01, Vol.54 (3)

2021

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Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Applied physics letters, 2024-04, Vol.124 (15)

2024

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Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Advanced functional materials, 2020-03, Vol.30 (10), p.n/a

2020

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Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

IEEE electron device letters, 2016-01, Vol.37 (1), p.28-30

2016

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IEEE_Xplore

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

Applied physics letters, 2011-10, Vol.99 (14), p.143101-143101-3

2011

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A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

Electron Backscatter Diffraction Study of Hexagonal Boron Nitride Growth on Cu Single-Crystal Substrates

GaN Power Devices - Current Status and Future Directions

Chemical etching behaviors of semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) gallium nitride films

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3

Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation

Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride Substrates

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

Frontiers in Electronics and Photonics

Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene

Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

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