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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.21-26

2012

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Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

Applied physics letters, 2014-06, Vol.104 (22)

2014

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GaN vertical and lateral polarity heterostructures on GaN substrates

Journal of crystal growth, 2011-10, Vol.332 (1), p.43-47

2011

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Approach for dislocation free GaN epitaxy

Journal of crystal growth, 2010-10, Vol.312 (21), p.3143-3146

2010

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Applied physics letters, 2013-08, Vol.103 (8), p.82110

2013

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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Journal of crystal growth, 2018-09, Vol.498, p.352-356

2018

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Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

Applied physics letters, 2005-01, Vol.86 (5), p.52101

2005

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Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Applied physics letters, 2010-05, Vol.96 (22)

2010

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Long range, non-destructive characterization of GaN substrates for power devices

Journal of crystal growth, 2019-01, Vol.506, p.178-184

2019

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Nature of luminescence and strain in gallium nitride nanowires

Journal of crystal growth, 2009-05, Vol.311 (10), p.2982-2986

2009

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Correlation of threading screw dislocation density to GaN 2‐DEG mobility

Electronics letters, 2014-11, Vol.50 (23), p.1722-1724

2014

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Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

Journal of applied physics, 2011-06, Vol.109 (12)

2011

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Journal of electronic materials, 2010-05, Vol.39 (5), p.478-481

2010

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GaN single crystals of different habit grown from solution at near atmospheric pressure

Journal of crystal growth, 2010-09, Vol.312 (18), p.2551-2557

2010

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Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.565-568

2014

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Effect of growth conditions on the magnetic characteristics of GaGdN

Applied physics letters, 2006-08, Vol.89 (9), p.092119-092119-3

2006

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Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN

Physica status solidi. C, 2014-04, Vol.11 (3-4), p.898-901

2014

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Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Journal of electronic materials, 2007-04, Vol.36 (4), p.391-396

2007

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Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

ECS journal of solid state science and technology, 2019, Vol.8 (9), p.P527-P535

2019

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Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN

New journal of physics, 2008-05, Vol.10 (5), p.055005, Article 055005

2008

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Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-11, Vol.33 (6)

2015

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Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Materials science forum, 2010-01, Vol.645-648, p.633-636

2010

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Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires

Journal of applied physics, 2011-08, Vol.110 (4), p.044303-044303-4

2011

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Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

ECS journal of solid state science and technology, 2016, Vol.5 (6), p.Q176-Q178

2016

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

GaN vertical and lateral polarity heterostructures on GaN substrates

Approach for dislocation free GaN epitaxy

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Long range, non-destructive characterization of GaN substrates for power devices

Nature of luminescence and strain in gallium nitride nanowires

Correlation of threading screw dislocation density to GaN 2‐DEG mobility

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

GaN single crystals of different habit grown from solution at near atmospheric pressure

Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

Effect of growth conditions on the magnetic characteristics of GaGdN

Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN

Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN

Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires

Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

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