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Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition

Semiconductor science and technology, 2021-01, Vol.36 (1), p.14004

2021

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Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)

Japanese Journal of Applied Physics, 1998-06, Vol.37 (6A), p.L630

1998

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In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si1−xGex on Si(001)

Thin solid films, 1998-12, Vol.334 (1-2), p.1-5

1998

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In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si sub(1-x)Ge sub(x) on Si(001)

Thin solid films, 1998-12, Vol.334 (1-2), p.1-5

1998

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Raman spectroscopy and positron lifetime studies of structural relaxation and defect evolution in amorphous silicon

Japanese Journal of Applied Physics, 1995, Vol.34 (10), p.5515-5519

1995

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Role of vacancy-type defects during structural relaxation of amorphous Si

Japanese Journal of Applied Physics, 1995, Vol.34 (2A), p.L149-L152

1995

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Amorphization processes and structural relaxation in ion implanted Si

Japanese Journal of Applied Physics, 1993, Vol.32 (1B), p.318-321

1993

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Structural relaxation in amorphous silicon prepared by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993, Vol.80, p.982-985

1993

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In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-09, Vol.16 (5), p.2956-2960

1998

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Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

MRS proceedings, 1998, Vol.537, Article G3.9

1998

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Secondary defects in low-energy As- and BF 2-implanted Si

Materials chemistry and physics, 1998, Vol.54 (1), p.23-27

1998

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Al mole fraction dependence of deep levels in AlGaN/GaN-HEMT structures estimated by CV profiling

MRS proceedings, 2005, Vol.892, Article 0892-FF10-01

2005

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Correlation Between Resistivity and Yellow Luminescence Intensity of MOCVD-Grown GaN Layers

MRS proceedings, 2005, Vol.892, Article 0892-FF23-14

2005

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Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.155-160

1999

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Secondary defects in low-energy As- and BF2-implanted Si

Materials chemistry and physics, 1998-07, Vol.54 (1-3), p.23-27

1998

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Chemical implication of the partition coefficient of 137 Cs between the suspended and dissolved phases in natural water

Journal of environmental radioactivity, 2024-09, Vol.278, p.107486

2024

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Chemical implication of the partition coefficient of 137Cs between the suspended and dissolved phases in natural water

Journal of environmental radioactivity, 2024-09, Vol.278, p.107486, Article 107486

2024

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Effectiveness of vitamin K2 on osteoporosis in adults with cerebral palsy

Brain & development (Tokyo. 1979), 2017-11, Vol.39 (10), p.846-850

2017

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Fcα/μ receptor mediates endocytosis of IgM-coated microbes

Nature immunology, 2000-11, Vol.1 (5), p.441-446

2000

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Genetic marking of hematopoietic stem and endothelial cells: identification of the Tmtsp gene encoding a novel cell surface protein with the thrombospondin-1 domain

Blood, 2006-06, Vol.107 (11), p.4317-4325

2006

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Fc[alpha]/[mu] receptor mediates endocytosis of IgM-coated microbes

Nature immunology, 2000-11, Vol.1 (5), p.441

2000

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Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition

Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)

In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si1−xGex on Si(001)

In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si sub(1-x)Ge sub(x) on Si(001)

Raman spectroscopy and positron lifetime studies of structural relaxation and defect evolution in amorphous silicon

Role of vacancy-type defects during structural relaxation of amorphous Si

Amorphization processes and structural relaxation in ion implanted Si

Structural relaxation in amorphous silicon prepared by ion implantation

In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber

Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

Secondary defects in low-energy As- and BF 2-implanted Si

Al mole fraction dependence of deep levels in AlGaN/GaN-HEMT structures estimated by CV profiling

Correlation Between Resistivity and Yellow Luminescence Intensity of MOCVD-Grown GaN Layers

Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

Secondary defects in low-energy As- and BF2-implanted Si

Chemical implication of the partition coefficient of 137 Cs between the suspended and dissolved phases in natural water

Chemical implication of the partition coefficient of 137Cs between the suspended and dissolved phases in natural water

Effectiveness of vitamin K2 on osteoporosis in adults with cerebral palsy

Fcα/μ receptor mediates endocytosis of IgM-coated microbes

Genetic marking of hematopoietic stem and endothelial cells: identification of the Tmtsp gene encoding a novel cell surface protein with the thrombospondin-1 domain

Fc[alpha]/[mu] receptor mediates endocytosis of IgM-coated microbes

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