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Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate‐transfer technique

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.n/a

2017

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Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Journal of crystal growth, 2013-11, Vol.382, p.36-40

2013

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Transport characteristics in Au/pentacene/Au diodes

Japanese Journal of Applied Physics, 2018-03, Vol.57 (3S2), p.3

2018

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High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers

IEEE electron device letters, 2022-03, Vol.43 (3), p.350-353

2022

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Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105 , 193509 (2014)]

Applied physics letters, 2015-01, Vol.106 (4)

2015

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High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures

Applied physics express, 2012-08, Vol.5 (8), p.84201

2012

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Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content

Physica status solidi. A, Applications and materials science, 2024-11, Vol.221 (21), p.n/a

2024

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Systematic Study of Insulator Deposition Effect (Si 3 N 4 , SiO 2 , AlN, and Al 2 O 3 ) on Electrical Properties in AlGaN/GaN Heterostructures

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2R), p.547

2007

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Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF02-04CF02-7

2013

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Electrical properties and device characteristics of InAlN/AlGaN/ AlN/GaN heterostructure field effect transistors

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1056-S1060

2009

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Flat Surfaces and Interfaces in AlN/GaN Heterostructures and Superlattices Grown by Flow-Rate Modulation Epitaxy

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.2305-2308

2003

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Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness

IEICE transactions on electronics, 2010, Vol.E93-C (5), p.579-584

2010

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Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique: Transfer of AlGaN/GaN HEMTs

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8)

2017

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Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1049-S1052

2009

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Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility

Applied physics express, 2008-11, Vol.1, p.111102

2008

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Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

Japanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.1930

2004

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High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN18-08JN18-4

2013

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Substrate-transfer Technique Using h-BN for GaN-based High-power Transistors

NTT Technical Review, 2016-08, Vol.14 (8), p.44-49

2016

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Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245{\mbox{--}}0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DF13-04DF13-6

2010

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Compressively Strained In x Al 1-x N/Al 0.22 Ga 0.78 N/GaN (x = 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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RF and DC characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1861-1865

2006

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SAW characteristics of GaN layers with surfaces exposed by dry etching

IEICE Electronics Express, 2005, Vol.2 (19), p.501-505

2005

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High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al 2 O 3 /Si 3 N 4 Bilayer

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.7889

2005

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Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate‐transfer technique

Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Transport characteristics in Au/pentacene/Au diodes

High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers

Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105 , 193509 (2014)]

High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures

Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content

Systematic Study of Insulator Deposition Effect (Si 3 N 4 , SiO 2 , AlN, and Al 2 O 3 ) on Electrical Properties in AlGaN/GaN Heterostructures

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

Electrical properties and device characteristics of InAlN/AlGaN/ AlN/GaN heterostructure field effect transistors

Flat Surfaces and Interfaces in AlN/GaN Heterostructures and Superlattices Grown by Flow-Rate Modulation Epitaxy

Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique: Transfer of AlGaN/GaN HEMTs

Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures

Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility

Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures

Substrate-transfer Technique Using h-BN for GaN-based High-power Transistors

Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245{\mbox{--}}0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers

Compressively Strained In x Al 1-x N/Al 0.22 Ga 0.78 N/GaN (x = 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers

RF and DC characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

SAW characteristics of GaN layers with surfaces exposed by dry etching

High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al 2 O 3 /Si 3 N 4 Bilayer

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