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Enhancement of thermoelectric performance of Mg2Si via co-doping Sb and C by simultaneous tuning of electronic and thermal transport properties

Journal of alloys and compounds, 2022-01, Vol.891, p.161968, Article 161968

2022

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Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2

Journal of materials science, 2024-05, Vol.59 (18), p.7840-7853

2024

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Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study

Science and technology of advanced materials, 2019-01, Vol.20 (1), p.160-172

2019

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Recent Studies on the Environmentally Benign Alkaline-Earth Silicide Mg2Si for Middle-Temperature Thermoelectric Applications

Energies (Basel), 2022-07, Vol.15 (13), p.4859

2022

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Exploratory Study of Substitutional Elements in Mg2Si for Inducing State of Negative Chemical Pressure

Materials transactions, 2018-09, Vol.59 (9), p.1417-1422

2018

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Investigation of local structures and electronic states of Sb-doped Mg2Si by fluorescence XAFS and HAXPES

Applied physics letters, 2020-10, Vol.117 (14)

2020

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Development of an Mg2Si Unileg Thermoelectric Module Using Durable Sb-Doped Mg2Si Legs

Journal of electronic materials, 2013-07, Vol.42 (7), p.2192-2197

2013

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Selection and Evaluation of Thermal Interface Materials for Reduction of the Thermal Contact Resistance of Thermoelectric Generators

Journal of electronic materials, 2014-10, Vol.43 (10), p.3792-3800

2014

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Influence of native defects on structural and electronic properties of magnesium silicide

Japanese Journal of Applied Physics, 2017-05, Vol.56 (5S1), p.05DC05-05DC05

2017

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Linking probabilities of off-lattice self-avoiding polygons and the effects of excluded volume

Journal of physics. A, Mathematical and theoretical, 2009-03, Vol.42 (10), p.105001-105001 (18)

2009

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Analysis of energy states where electrons and holes coexist in pseudomorphically strained InAs high-electron-mobility transistors

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Comparison between theoretical and experimental results for energy states of two-dimensional electron gas in pseudomorphically strained InAs high-electron-mobility transistors

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EF09-5

2014

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Topological Interaction between Loop Structures in Polymer Networks and the Nonlinear Rubber Elasticity

Nihon Reoroji Gakkaishi, 2011/05/10, Vol.39(1_2), pp.65-73

2011

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Conduction band engineering of Mg2Si by isotropic strain for enhancement of thermoelectric performance: A first-principles study

Journal of applied physics, 2020-05, Vol.127 (20)

2020

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First-principles study of the effects of native defects on the thermoelectric properties of narrow-gap semiconducting α-SrSi2 using the hybrid functional method

Physica. B, Condensed matter, 2022-06, Vol.634, p.413795, Article 413795

2022

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Melt growth of crystalline α-SrSi2 by the vertical Bridgman method and its thermoelectric characteristics

Journal of crystal growth, 2024-11, Vol.645, p.127838, Article 127838

2024

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Current-Induced Cooling Phenomenon in a Two-Dimensional Electron Gas Under a Magnetic Field

Journal of low temperature physics, 2013-07, Vol.172 (1-2), p.132-153

2013

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Electronic band engineering of Mg2Si by isoelectronic impurity doping: a first-principles study for enhancing thermoelectric properties

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1007

2023

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Electronic band engineering of Mg 2 Si by isoelectronic impurity doping: a first-principles study for enhancing thermoelectric properties

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1007

2023

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Temperature distribution in nano-devices under a strong magnetic field

Computer physics communications, 2011, Vol.182 (1), p.90-92

2011

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First-principles study of the structural and thermoelectric properties of Y-doped α-SrSi 2

Japanese Journal of Applied Physics, 2022-03, Vol.61 (3), p.31002

2022

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Transport-Coefficient Dependence of Current-Induced Cooling Effect in a Two-Dimensional Electron Gas

Journal of electronic materials, 2012-06, Vol.41 (6), p.1535-1539

2012

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Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance

Journal of applied physics, 2021-12, Vol.130 (21)

2021

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Publisher's Note: “Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance” [J. Appl. Phys. 130, 190903 (2021)]

Journal of applied physics, 2021-12, Vol.130 (24)

2021

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Ultralow‐Temperature Sintering of Titanium Powder by Spark Plasma Sintering Under Cyclic Pressure

Advanced engineering materials, 2024-08

2024

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Enhancement of thermoelectric performance of Mg2Si via co-doping Sb and C by simultaneous tuning of electronic and thermal transport properties

Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2

Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study

Recent Studies on the Environmentally Benign Alkaline-Earth Silicide Mg2Si for Middle-Temperature Thermoelectric Applications

Exploratory Study of Substitutional Elements in Mg2Si for Inducing State of Negative Chemical Pressure

Investigation of local structures and electronic states of Sb-doped Mg2Si by fluorescence XAFS and HAXPES

Development of an Mg2Si Unileg Thermoelectric Module Using Durable Sb-Doped Mg2Si Legs

Selection and Evaluation of Thermal Interface Materials for Reduction of the Thermal Contact Resistance of Thermoelectric Generators

Influence of native defects on structural and electronic properties of magnesium silicide

Linking probabilities of off-lattice self-avoiding polygons and the effects of excluded volume

Analysis of energy states where electrons and holes coexist in pseudomorphically strained InAs high-electron-mobility transistors

Comparison between theoretical and experimental results for energy states of two-dimensional electron gas in pseudomorphically strained InAs high-electron-mobility transistors

Topological Interaction between Loop Structures in Polymer Networks and the Nonlinear Rubber Elasticity

Conduction band engineering of Mg2Si by isotropic strain for enhancement of thermoelectric performance: A first-principles study

First-principles study of the effects of native defects on the thermoelectric properties of narrow-gap semiconducting α-SrSi2 using the hybrid functional method

Melt growth of crystalline α-SrSi2 by the vertical Bridgman method and its thermoelectric characteristics

Current-Induced Cooling Phenomenon in a Two-Dimensional Electron Gas Under a Magnetic Field

Electronic band engineering of Mg2Si by isoelectronic impurity doping: a first-principles study for enhancing thermoelectric properties

Electronic band engineering of Mg 2 Si by isoelectronic impurity doping: a first-principles study for enhancing thermoelectric properties

Temperature distribution in nano-devices under a strong magnetic field

First-principles study of the structural and thermoelectric properties of Y-doped α-SrSi 2

Transport-Coefficient Dependence of Current-Induced Cooling Effect in a Two-Dimensional Electron Gas

Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance

Publisher's Note: “Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance” [J. Appl. Phys. 130, 190903 (2021)]

Ultralow‐Temperature Sintering of Titanium Powder by Spark Plasma Sintering Under Cyclic Pressure

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