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How does the molecular linker in dynamic force spectroscopy affect probing molecular interactions at the single-molecule level?

Japanese Journal of Applied Physics, 2016-08, Vol.55 (8S1), p.8

2016

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Force measurement enabling precise analysis by dynamic force spectroscopy

International journal of molecular sciences, 2012-01, Vol.13 (1), p.453-465

2012

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High Soft-Error Tolerance Body-Tied Silicon-on-Insulator Technology with Partial Trench Isolation

Japanese Journal of Applied Physics, 2008-01, Vol.47 (1R), p.74

2008

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A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4R), p.2092

2008

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A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices

2007 IEEE Symposium on VLSI Technology, 2007, p.78-79

2007

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IEEE_Xplore

A 0.5V 100MHz PD-SOI SRAM with enhanced read stability and write margin by asymmetric MOSFET and forward body bias

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.356-357

2010

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IEEE_Xplore

Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation

Japanese Journal of Applied Physics, 1999-04, Vol.38 (4S), p.2487

1999

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Development of Strain Distribution Sensor Having Curved Surface for Grip Force Control

Transactions of the Japan Society of Mechanical Engineers Series C, 1998/11/25, Vol.64(627), pp.4264-4270

1998

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A Novel Low-Power and High-Speed SOI SRAM With Actively Body-Bias Controlled (ABC) Technology for Emerging Generations

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.365-371

2008

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IEEE_Xplore

Grip Force Control by Detecting the Internal Strain Distribution Inside the Elastic Finger Having Curved Surface

Transactions of the Japan Society of Mechanical Engineers Series C, 1998/04/25, Vol.64(620), pp.1258-1265

1998

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Feasibility of 0.18 μm SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.2065-2073

2001

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Bulk-layout-compatible 0.18-μm SOI-CMOS technology using body-tied partial-trench-isolation (PTI)

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2816-2822

2001

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Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs

IEEE transactions on electron devices, 2002-01, Vol.49 (1), p.55-60

2002

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Substrate-bias effect and source-drain breakdown characteristics in body-tied short-channel SOI MOSFET's

IEEE transactions on electron devices, 1999-01, Vol.46 (1), p.151-158

1999

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IEEE_Xplore

Body bias controlled SOI technology with HTI

International Meeting for Future of Electron Devices, 2004, 2004, p.131-132

2004

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IEEE_Xplore

High soft-error tolerance body-tied SOI technology with partial trench isolation (PTI) for next generation devices

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.48-49

2002

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IEEE_Xplore

Active Body-bias SOI-CMOS Driver Circuits

Symposium 1997 on VLSI Circuits, 1997, p.29-30

1997

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IEEE_Xplore

Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

Scientific reports, 2021-01, Vol.11 (1), p.185-185, Article 185

2021

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Adipose-derived stem cell transplantation for therapeutic lymphangiogenesis in a mouse secondary lymphedema model

Regenerative medicine, 2015-08, Vol.10 (5), p.549-562

2015

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Experimental characterization of ultrafast phenomena of secondary-ion emission induced by nanoscale energy deposition processes of energetic C60 impacts

Journal of applied physics, 2020-06, Vol.127 (21)

2020

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Secondary ion mass spectrometry using energetic cluster ion beams: Toward highly sensitive imaging mass spectrometry

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2020-09, Vol.479, p.240-245

2020

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0.12–0.54 MeV C60 ion impacts on a poly(methyl methacrylate) target: Characterization through emission properties of negative secondary ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.161-164

2019

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Novel Approaches for Intensifying Negative C60 Ion Beams Using Conventional Ion Sources Installed on a Tandem Accelerator

Quantum beam science, 2020-03, Vol.4 (1), p.13

2020

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Matrix-material dependence on the elongation of embedded gold nanoparticles induced by 4 MeV C60 and 200 MeV Xe ion irradiation

Nanotechnology, 2020-04, Vol.31 (26), p.265606-265606

2020

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Cloning and Expression of the Human Interleukin-6 (BSF-2/IFN$\beta $ 2) Receptor

Science (American Association for the Advancement of Science), 1988-08, Vol.241 (4867), p.825-828

1988

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How does the molecular linker in dynamic force spectroscopy affect probing molecular interactions at the single-molecule level?

Force measurement enabling precise analysis by dynamic force spectroscopy

High Soft-Error Tolerance Body-Tied Silicon-on-Insulator Technology with Partial Trench Isolation

A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology

A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices

A 0.5V 100MHz PD-SOI SRAM with enhanced read stability and write margin by asymmetric MOSFET and forward body bias

Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation

Development of Strain Distribution Sensor Having Curved Surface for Grip Force Control

A Novel Low-Power and High-Speed SOI SRAM With Actively Body-Bias Controlled (ABC) Technology for Emerging Generations

Grip Force Control by Detecting the Internal Strain Distribution Inside the Elastic Finger Having Curved Surface

Feasibility of 0.18 μm SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications

Bulk-layout-compatible 0.18-μm SOI-CMOS technology using body-tied partial-trench-isolation (PTI)

Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs

Substrate-bias effect and source-drain breakdown characteristics in body-tied short-channel SOI MOSFET's

Body bias controlled SOI technology with HTI

High soft-error tolerance body-tied SOI technology with partial trench isolation (PTI) for next generation devices

Active Body-bias SOI-CMOS Driver Circuits

Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

Adipose-derived stem cell transplantation for therapeutic lymphangiogenesis in a mouse secondary lymphedema model

Experimental characterization of ultrafast phenomena of secondary-ion emission induced by nanoscale energy deposition processes of energetic C60 impacts

Secondary ion mass spectrometry using energetic cluster ion beams: Toward highly sensitive imaging mass spectrometry

0.12–0.54 MeV C60 ion impacts on a poly(methyl methacrylate) target: Characterization through emission properties of negative secondary ions

Novel Approaches for Intensifying Negative C60 Ion Beams Using Conventional Ion Sources Installed on a Tandem Accelerator

Matrix-material dependence on the elongation of embedded gold nanoparticles induced by 4 MeV C60 and 200 MeV Xe ion irradiation

Cloning and Expression of the Human Interleukin-6 (BSF-2/IFN$\beta $ 2) Receptor

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