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Transient overshoot and storage of charge carriers on ligands in quantum dot LEDs

Journal of applied physics, 2019-08, Vol.126 (7)

2019

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Negative capacitance as a diagnostic tool for recombination in purple quantum dot LEDs

Journal of applied physics, 2019-05, Vol.125 (19)

2019

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Ligand memory effect in purple quantum dot LEDs

Applied physics letters, 2019-10, Vol.115 (17)

2019

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[6,6]-Phenyl‑C61-butyric Acid 2‑((2-(Dimethylamino)ethyl)(methyl)amino)-ethyl Ester as an Acceptor and Cathode Interfacial Material in Polymer Solar Cells

ACS applied materials & interfaces, 2014-04, Vol.6 (8), p.5844-5851

2014

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Blue–Green Electroluminescent Carbon Dots Derived from Fenugreek Seeds for Display and Lighting Applications

ACS applied nano materials, 2021-11, Vol.4 (11), p.12472-12480

2021

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A Numerical Device Model and Approach to Degradation Mechanisms in Organic Light Emitting Diodes

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CK02-04CK02-3

2013

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Solvated C70 single crystals for organic field effect transistors

Chemical physics letters, 2022-11, Vol.807, p.140094, Article 140094

2022

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[6,6]-Phenyl-C 61 -butyric Acid 2-((2-(Dimethylamino)ethyl)(methyl)amino)-ethyl Ester as an Acceptor and Cathode Interfacial Material in Polymer Solar Cells

ACS applied materials & interfaces, 2014-04, Vol.6 (8), p.5844-5851

2014

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New blue phosphorescent iridium complexes for OLEDs

Journal of the Society for Information Display, 2012-01, Vol.20 (1), p.70-78

2012

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P-181: Device Parameters Determination by Numerical Model Fitting for Organic Light-Emitting Diodes (OLEDs) using Impedance Spectroscopy Measurement

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1776-1779

2011

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Unconventional, Gram-Scale Synthesis of a Molecular Dimer Organic Luminogen with Aggregation-Induced Emission

ACS applied materials & interfaces, 2021-09, Vol.13 (34), p.40441-40450

2021

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Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

Journal of applied physics, 2002-04, Vol.91 (8), p.5246-5249

2002

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33.1: Invited Paper: A Novel Vertical-Type Light-Emitting Transistor and Panel Design on Amorphous Silicon Backplane for High Resolution TV Application

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.476-478

2015

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Application of the ferroelectric materials to ULSI memories

Applied surface science, 1997-04, Vol.113, p.656-663

1997

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Fabrication and Field Effect Transistor Characteristics of Well-Ordered Pentacene Film

Molecular crystals and liquid crystals (Philadelphia, Pa. : 2003), 2004-01, Vol.424 (1), p.195-202

2004

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Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect Transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures

Japanese journal of applied physics, 1997-09, Vol.36 (9B), p.5908-5911

1997

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Initial stage and growth process of ceria, yttria-stabilized-zirconia and ceria-zirconia mixture thin films on Si(100) surfaces

Japanese Journal of Applied Physics, 1997, Vol.36 (8), p.5253-5258

1997

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Temperature-dependent carrier mobility and threshold voltage of field-effect transistors with tetracene single crystals

Journal of applied physics, 2010-12, Vol.108 (12)

2010

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Characterization of metal/ferroelectric/insulator/semiconductor structure with CeO2 buffer layer

Japanese journal of applied physics, 1995, Vol.34 (8A), p.4163-4166

1995

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Characteristics of metal/ferroelectric/insulator/semiconductor structure using SrBi2Ta2O9 as the ferroelectric material

Japanese journal of applied physics, 1996-12, Vol.35 (12B), p.L1680-L1682

1996

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Temperature-dependent carrier mobility and threshold voltageof field-effect transistors with tetracene single crystals

Journal of applied physics, 2010-12, Vol.108 (12), p.124511-124511-4

2010

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Crystal and electrical characterizations of oriented yttria-stabilized zirconia buffer layer for the metal/ferroelectric/insulator/semiconductor field-effect transistor

Japanese Journal of Applied Physics, 1996, Vol.35 (7), p.4016-4020

1996

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Modeling and Simulation of Tunneling Current in Oxygen-Plasma-Treated Aluminum Oxide Insulating Barrier for Magnetic Tunnel Junction

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 2, No. 4B), p.L458-L461

2002

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Formation of metal/ferroelectric/insulator/semiconductor structure with a CeO2 buffer layer

Japanese journal of applied physics, 1994, Vol.33 (9B), p.5219-5222

1994

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Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer

Japanese Journal of Applied Physics, 1999, Vol.38 (Part 2, No. 4B), p.L451-L453

1999

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Transient overshoot and storage of charge carriers on ligands in quantum dot LEDs

Negative capacitance as a diagnostic tool for recombination in purple quantum dot LEDs

Ligand memory effect in purple quantum dot LEDs

[6,6]-Phenyl‑C61-butyric Acid 2‑((2-(Dimethylamino)ethyl)(methyl)amino)-ethyl Ester as an Acceptor and Cathode Interfacial Material in Polymer Solar Cells

Blue–Green Electroluminescent Carbon Dots Derived from Fenugreek Seeds for Display and Lighting Applications

A Numerical Device Model and Approach to Degradation Mechanisms in Organic Light Emitting Diodes

Solvated C70 single crystals for organic field effect transistors

[6,6]-Phenyl-C 61 -butyric Acid 2-((2-(Dimethylamino)ethyl)(methyl)amino)-ethyl Ester as an Acceptor and Cathode Interfacial Material in Polymer Solar Cells

New blue phosphorescent iridium complexes for OLEDs

P-181: Device Parameters Determination by Numerical Model Fitting for Organic Light-Emitting Diodes (OLEDs) using Impedance Spectroscopy Measurement

Unconventional, Gram-Scale Synthesis of a Molecular Dimer Organic Luminogen with Aggregation-Induced Emission

Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

33.1: Invited Paper: A Novel Vertical-Type Light-Emitting Transistor and Panel Design on Amorphous Silicon Backplane for High Resolution TV Application

Application of the ferroelectric materials to ULSI memories

Fabrication and Field Effect Transistor Characteristics of Well-Ordered Pentacene Film

Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect Transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures

Initial stage and growth process of ceria, yttria-stabilized-zirconia and ceria-zirconia mixture thin films on Si(100) surfaces

Temperature-dependent carrier mobility and threshold voltage of field-effect transistors with tetracene single crystals

Characterization of metal/ferroelectric/insulator/semiconductor structure with CeO2 buffer layer

Characteristics of metal/ferroelectric/insulator/semiconductor structure using SrBi2Ta2O9 as the ferroelectric material

Temperature-dependent carrier mobility and threshold voltageof field-effect transistors with tetracene single crystals

Crystal and electrical characterizations of oriented yttria-stabilized zirconia buffer layer for the metal/ferroelectric/insulator/semiconductor field-effect transistor

Modeling and Simulation of Tunneling Current in Oxygen-Plasma-Treated Aluminum Oxide Insulating Barrier for Magnetic Tunnel Junction

Formation of metal/ferroelectric/insulator/semiconductor structure with a CeO2 buffer layer

Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer

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