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Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2438-2447

2006

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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3152-3158

2007

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IEEE_Xplore

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

IEEE electron device letters, 2009-02, Vol.30 (2), p.103-106

2009

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IEEE_Xplore

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.13-19

2009

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IEEE_Xplore

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Electronics letters, 2007, Vol.43 (14), p.777-779

2007

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Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

IEEE electron device letters, 2004-07, Vol.25 (7), p.456-458

2004

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IEEE_Xplore

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

IEEE electron device letters, 2008-05, Vol.29 (5), p.416-418

2008

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IEEE_Xplore

Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

Solid-state electronics, 2005-02, Vol.49 (2), p.279-282

2005

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Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

IEEE electron device letters, 2007-02, Vol.28 (2), p.86-89

2007

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IEEE_Xplore

Experimental gallium nitride microwave Doherty amplifier

Electronics letters, 2005, Vol.41 (23), p.1284-1285

2005

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A phased array optical scanning (PHAROS) device used as a 1-to-9 way switch

IEEE journal of quantum electronics, 1992-03, Vol.28 (3), p.678-685

1992

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Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate

Journal of lightwave technology, 1999-02, Vol.17 (2), p.267-281

1999

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IEEE_Xplore

Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

Solid-state electronics, 2000-11, Vol.44 (11), p.1879-1885

2000

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Indium Antimonide Based Technology for RF Applications

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.121-124

2006

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IEEE_Xplore

Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.503-509

2005

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IEEE_Xplore

Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs

2007 70th ARFTG Microwave Measurement Conference (ARFTG), 2007, p.1-4

2007

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IEEE_Xplore

Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.345-348

1999

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High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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IEEE_Xplore

Surface patterning of GaAs by CCl 2F 2 reactive ion etching

Vacuum, 1988, Vol.38 (7), p.519-525

1988

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Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.468-471

2002

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Single-tone and two-tone time-domain large signal characterization of GaN HFETs operated in class A

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.2, p.825-828 Vol.2

2004

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IEEE_Xplore

Generation of coherent GHz acoustic phonons in AlGaN/GaN microwave field effect transistors

61st Device Research Conference. Conference Digest (Cat. No.03TH8663), 2003, p.65-66

2003

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IEEE_Xplore

Thermal management and device failure assessment of high-power AlGaN/GaN HFETs

60th DRC. Conference Digest Device Research Conference, 2002, p.99-100

2002

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IEEE_Xplore

High-performance InSb based quantum well field effect transistors for low-power dissipation applications

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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IEEE_Xplore

X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

2008 European Microwave Integrated Circuit Conference, 2008, p.190-193

2008

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IEEE_Xplore

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Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

Experimental gallium nitride microwave Doherty amplifier

A phased array optical scanning (PHAROS) device used as a 1-to-9 way switch

Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate

Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

Indium Antimonide Based Technology for RF Applications

Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs

Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

Surface patterning of GaAs by CCl 2F 2 reactive ion etching

Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates

Single-tone and two-tone time-domain large signal characterization of GaN HFETs operated in class A

Generation of coherent GHz acoustic phonons in AlGaN/GaN microwave field effect transistors

Thermal management and device failure assessment of high-power AlGaN/GaN HFETs

High-performance InSb based quantum well field effect transistors for low-power dissipation applications

X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

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