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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3152-3158

2007

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Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

IEEE electron device letters, 2007-02, Vol.28 (2), p.86-89

2007

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Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Electronics letters, 2007, Vol.43 (14), p.777-779

2007

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Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias

Applied physics letters, 2006-03, Vol.88 (10)

2006

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Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Applied physics letters, 2003-01, Vol.82 (1), p.124-126

2003

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Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

IEEE electron device letters, 2008-05, Vol.29 (5), p.416-418

2008

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Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

Semiconductor science and technology, 2005-03, Vol.20 (3), p.271-278

2005

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Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

Solid-state electronics, 2005-02, Vol.49 (2), p.279-282

2005

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Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors

Semiconductor science and technology, 2004-06, Vol.19 (6), p.L65-L67

2004

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Novel 1-to-N way integrated optical beam splitters using symmetric mode mixing in GaAs/AlGaAs multimode waveguides

Applied physics letters, 1992-10, Vol.61 (15), p.1754-1756

1992

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Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

IEEE electron device letters, 2004-07, Vol.25 (7), p.456-458

2004

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Experimental gallium nitride microwave Doherty amplifier

Electronics letters, 2005, Vol.41 (23), p.1284-1285

2005

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Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC

Semiconductor science and technology, 2000-12, Vol.15 (12), p.1107-1114

2000

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Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate

Journal of lightwave technology, 1999-02, Vol.17 (2), p.267-281

1999

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Insights into electroluminescent emission from AlGaN ∕ GaN field effect transistors using micro-Raman thermal analysis

Applied physics letters, 2006-01, Vol.88 (2), p.023507-023507-3

2006

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Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2438-2447

2006

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Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Applied physics letters, 2005-09, Vol.87 (10)

2005

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Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content

Journal of applied physics, 2004-11, Vol.96 (10), p.5588-5595

2004

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High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Materials science forum, 2007-01, Vol.556-557, p.873-876

2007

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Novel phased array optical scanning device implemented using GaAs/AlGaAs technology

Applied physics letters, 1991-08, Vol.59 (8), p.899-901

1991

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Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.345-348

1999

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Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.13-19

2009

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Time-resolved nanosecond sub-micron resolution thermal analysis of high-power AlGaN/GaN HFETs

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2014-2018

2007

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High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

Materials science forum, 2007-01, Vol.556-557, p.987-990

2007

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High Temperature Characterisation of 4H-SiC VJFET

Materials science forum, 2007-01, Vol.556-557, p.799-802

2007

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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias

Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors

Novel 1-to-N way integrated optical beam splitters using symmetric mode mixing in GaAs/AlGaAs multimode waveguides

Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

Experimental gallium nitride microwave Doherty amplifier

Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC

Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate

Insights into electroluminescent emission from AlGaN ∕ GaN field effect transistors using micro-Raman thermal analysis

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Novel phased array optical scanning device implemented using GaAs/AlGaAs technology

Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Time-resolved nanosecond sub-micron resolution thermal analysis of high-power AlGaN/GaN HFETs

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

High Temperature Characterisation of 4H-SiC VJFET

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