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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies (Basel), 2017, Vol.10 (2), p.153-153

2017

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GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate

IEEE transactions on power electronics, 2022-10, Vol.37 (10), p.11896-11910

2022

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AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1208-1216

2010

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High-voltage normally OFF GaN power transistors on SiC and Si substrates

MRS bulletin, 2015-05, Vol.40 (5), p.418-424

2015

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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3084-3090

2013

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Self-Heating in GaN Transistors Designed for High-Power Operation

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3429-3434

2014

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SiC and GaN devices – wide bandgap is not all the same

IET circuits, devices & systems, 2014-05, Vol.8 (3), p.227-236

2014

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On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.215-228

2021

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High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1687-1691

2015

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Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.345-348

2012

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Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3878-3883

2018

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Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2334-2339

2016

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AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3050-3058

2010

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Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices

Microelectronics and reliability, 2020-11, Vol.114, p.113951, Article 113951

2020

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Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2427-2429

2011

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Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

IEEE transactions on industry applications, 2016-11, Vol.52 (6), p.4955-4964

2016

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Experimental Investigation of GaN-on-AlN/SiC Transistors with regard to Monolithic Integration

IEEE transactions on power electronics, 2024-07, p.1-10

2024

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Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag

Physica status solidi. A, Applications and materials science, 2024-04

2024

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E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

2015 45th European Solid State Device Research Conference (ESSDERC), 2015, p.60-63

2015

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GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Physica status solidi. PSS-RRL. Rapid research letters, 2024-03

2024

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Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

IEEE electron device letters, 2012-03, Vol.33 (3), p.357-359

2012

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Correlating Interface and Border Traps With Distinctive Features of C – V Curves in Vertical Al 2 O 3 /GaN MOS Capacitors

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1561-1566

2024

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Correlating Interface and Border Traps With Distinctive Features of C-V Curves in Vertical Al } O } /GaN MOS Capacitors

IEEE transactions on electron devices, 2023-11, p.1-6

2023

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Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-07, Vol.41 (4)

2023

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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Self-Heating in GaN Transistors Designed for High-Power Operation

SiC and GaN devices – wide bandgap is not all the same

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETs

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

Experimental Investigation of GaN-on-AlN/SiC Transistors with regard to Monolithic Integration

Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Correlating Interface and Border Traps With Distinctive Features of C – V Curves in Vertical Al 2 O 3 /GaN MOS Capacitors

Correlating Interface and Border Traps With Distinctive Features of C-V Curves in Vertical Al } O } /GaN MOS Capacitors

Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

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