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Intranuclear matrix metalloproteinases promote DNA damage and apoptosis induced by oxygen–glucose deprivation in neurons

Neuroscience, 2012-09, Vol.220, p.277-290

2012

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Impact of a pharmacist medication adherence consultation program on health care costs and risk of hospitalization

Value in health, 2015-05, Vol.18 (3), p.A3-A3

2015

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Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Journal of crystal growth, 2015-10, Vol.427, p.72-79

2015

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Optimizing circadian drug infusion schedules towards personalized cancer chronotherapy

PLoS computational biology, 2020, Vol.16 (1), p.e1007218

2020

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Incidence and survival of soft tissue sarcoma in England between 2013 and 2017, an analysis from the National Cancer Registration and Analysis Service

International journal of cancer, 2023-05, Vol.152 (9), p.1789-1803

2023

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MA1 - Impact of a pharmacist medication adherence consultation program on health care costs and risk of hospitalization

Value in health, 2015-05, Vol.18 (3), p.A3-A3

2015

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GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Journal of applied physics, 2015-09, Vol.118 (10)

2015

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3197-3203

2013

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IEEE_Xplore

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Journal of crystal growth, 2015-09, Vol.426, p.243-247

2015

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Heavily tellurium doped n-type InGaAs grown by MOCVD on 300mm Si wafers

Journal of crystal growth, 2015-09, Vol.426, p.243-247

2015

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High-Speed E-Mode InAs QW MOSFETs With Al2O3 Insulator for Future RF Applications

IEEE electron device letters, 2013-02, Vol.34 (2), p.196-198

2013

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Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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Dry etching device quality high-κ GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Microelectronic engineering, 2010-05, Vol.87 (5-8), p.1587-1589

2010

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Discrimination of interval size in short tone sequences

The Journal of the Acoustical Society of America, 2007-04, Vol.121 (4), p.2376-2383

2007

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Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm"

IEEE electron device letters, 2008-10, Vol.29 (10), p.1085-1086

2008

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IEEE_Xplore

A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.996-999

2008

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Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications

Microelectronic engineering, 2007-09, Vol.84 (9), p.2398-2403

2007

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Communication in graduate management programs: results of a survey

IEEE transactions on professional communication, 1991-03, Vol.34 (1), p.24-35

1991

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IEEE_Xplore

180 nm metal gate, high-k dielectric, implant-free III-V MOSFETs with transconductance of over 425 μS/μm

Electronics letters, 2007-04, Vol.43 (9), p.543-545

2007

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Analysis of recent aluminum wire array experiments on z with k-shell yields of ~ 3 5 0 kj

The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts, 2006, p.278-278

2006

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IEEE_Xplore

EFTEM and EELS SI: tools for investigating the effects of etching processes for III-V MOSFET devices

Journal of physics. Conference series, 2008-08, Vol.126 (1), p.012053

2008

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Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs

Microelectronic engineering, 2007-05, Vol.84 (5-8), p.1124-1127

2007

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Compound semiconductors on silicon for future generation VLSI

2010 IEEE International SOI Conference (SOI), 2010, p.1-3

2010

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IEEE_Xplore

Regulatable endogenous production of cytokinins up to 'toxic' levels in transgenic plants and plant tissues

Plant molecular biology, 1993-04, Vol.22 (1), p.13-23

1993

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Challenges of III-V materials in advanced CMOS logic

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

2012

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IEEE_Xplore

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Intranuclear matrix metalloproteinases promote DNA damage and apoptosis induced by oxygen–glucose deprivation in neurons

Impact of a pharmacist medication adherence consultation program on health care costs and risk of hospitalization

Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Optimizing circadian drug infusion schedules towards personalized cancer chronotherapy

Incidence and survival of soft tissue sarcoma in England between 2013 and 2017, an analysis from the National Cancer Registration and Analysis Service

MA1 - Impact of a pharmacist medication adherence consultation program on health care costs and risk of hospitalization

GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300mm Si wafers

High-Speed E-Mode InAs QW MOSFETs With Al2O3 Insulator for Future RF Applications

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Dry etching device quality high-κ GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Discrimination of interval size in short tone sequences

Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm"

A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs

Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications

Communication in graduate management programs: results of a survey

180 nm metal gate, high-k dielectric, implant-free III-V MOSFETs with transconductance of over 425 μS/μm

Analysis of recent aluminum wire array experiments on z with k-shell yields of ~ 3 5 0 kj

EFTEM and EELS SI: tools for investigating the effects of etching processes for III-V MOSFET devices

Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs

Compound semiconductors on silicon for future generation VLSI

Regulatable endogenous production of cytokinins up to 'toxic' levels in transgenic plants and plant tissues

Challenges of III-V materials in advanced CMOS logic

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