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On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Applied physics letters, 2016-02, Vol.108 (8)

2016

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Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Journal of crystal growth, 2015-09, Vol.426, p.75-81

2015

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Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Journal of applied physics, 2014-12, Vol.116 (21)

2014

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Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

Thin solid films, 2012-02, Vol.520 (8), p.3326-3331

2012

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Fabrication and Analysis of a / Heterojunction Line Tunnel FET

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.707-715

2014

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Layout Scaling of \hbox\hbox \hbox pFETs

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2544-2550

2011

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Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

Jpn J Appl Phys, 2013-04, Vol.52 (4), p.04CC01-04CC01-4

2013

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Application of Cl2 for low temperature etch and epitaxy

Semiconductor science and technology, 2019-06, Vol.34 (7)

2019

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Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide

Journal of crystal growth, 2002-02, Vol.234 (4), p.690-698

2002

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Application of Cl 2 for low temperature etch and epitaxy

Semiconductor science and technology, 2019-07, Vol.34 (7), p.74003

2019

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Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1043

2023

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Investigation of Cl2 etch in view of extremely low temperature selective epitaxial processes

Semiconductor science and technology, 2017-10, Vol.32 (11)

2017

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Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5380-5385

2021

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Compressively strained epitaxial Ge layers for quantum computing applications

Materials science in semiconductor processing, 2024-05, Vol.174, p.108231, Article 108231

2024

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Investigation of Cl 2 etch in view of extremely low temperature selective epitaxial processes

Semiconductor science and technology, 2017-11, Vol.32 (11), p.114006

2017

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Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.4

2024

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Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB)

2019

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High depth resolution analysis of Si/SiGe multilayers with the atom probe

Applied physics letters, 2009-10, Vol.95 (14), p.144106-144106-3

2009

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Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4032-4039

2014

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Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBA04

2019

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High-Performance Si0.45Ge0.55 Implant-Free Quantum Well pFET With Enhanced Mobility by Low-Temperature Process and Transverse Strain Relaxation

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.3985-3990

2014

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High-Performance Si 0.45 Ge 0.55 Implant-Free Quantum Well pFET With Enhanced Mobility by Low-Temperature Process and Transverse Strain Relaxation

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.3985-3990

2014

Volltextzugriff (PDF)

TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1079-1084

2015

Volltextzugriff (PDF)

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On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

Fabrication and Analysis of a / Heterojunction Line Tunnel FET

Layout Scaling of \hbox\hbox \hbox pFETs

Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

Application of Cl2 for low temperature etch and epitaxy

Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide

Application of Cl 2 for low temperature etch and epitaxy

Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices

Investigation of Cl2 etch in view of extremely low temperature selective epitaxial processes

Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

Compressively strained epitaxial Ge layers for quantum computing applications

Investigation of Cl 2 etch in view of extremely low temperature selective epitaxial processes

Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

High depth resolution analysis of Si/SiGe multilayers with the atom probe

Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme

Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

High-Performance Si0.45Ge0.55 Implant-Free Quantum Well pFET With Enhanced Mobility by Low-Temperature Process and Transverse Strain Relaxation

High-Performance Si 0.45 Ge 0.55 Implant-Free Quantum Well pFET With Enhanced Mobility by Low-Temperature Process and Transverse Strain Relaxation

TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs

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