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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Journal of crystal growth, 2011-11, Vol.334 (1), p.103-107

2011

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Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Molecular beam epitaxy control and photoluminescence properties of InAsBi

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

2012

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Background and interface electron populations in InAs0.58Sb0.42

Semiconductor science and technology, 2015-03, Vol.30 (3)

2015

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Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices

Journal of electronic materials, 2014-09, Vol.43 (9), p.3184-3190

2014

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Dual-side Processed demultiplexer using grating-assisted codirectional coupler

IEEE photonics technology letters, 2005-03, Vol.17 (3), p.600-602

2005

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Structural and luminescent properties of bulk InAsSb

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

2012

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Background and interface electron populations in InAs 0.58 Sb 0.42

Semiconductor science and technology, 2015-03, Vol.30 (3), p.35018

2015

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Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors

Electronics letters, 1999-09, Vol.35 (19), p.1673

1999

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Lesser Scaup diets during migration and winter in the Mississippi flyway

Canadian journal of zoology, 1991-02, Vol.69 (2), p.328-333

1991

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Effect of barrier material on the two-dimensional electron gas in δ-doped GaInAs-based quantum wells

Journal of applied physics, 1996-06, Vol.79 (12), p.9196-9199

1996

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Multi-use, low SWaP, ultra-sensitive photoreceiver arrays for ladar & remote sensing

2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720), 2004, Vol.3, p.1744 Vol.3

2004

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Monolithic photoreceiver technology for free space optical networks

2003 IEEE Aerospace Conference Proceedings (Cat. No.03TH8652), 2003, Vol.4, p.4_1669-4_1675

2003

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High-performance InAlAs/InGaAs HEMTs and MESFETs

IEEE electron device letters, 1988-07, Vol.9 (7), p.328-330

1988

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Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device

Electronics letters, 1988-05, Vol.24 (11), p.681-683

1988

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InAlAs/InGaAs heterojunction bipolar transistors with AlAs etch-stop layer

Electronics letters, 1992-07, Vol.28 (15), p.1388-1390

1992

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Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

IEEE electron device letters, 1988-12, Vol.9 (12), p.630-632

1988

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Diets of Lesser Scaup Breeding in Manitoba (Dieta de Individuos de Aythya Affinis que se Están Reproduciendo)

Journal of field ornithology, 1991-07, Vol.62 (3), p.325-334

1991

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Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results

Applied physics letters, 1990-07, Vol.57 (1), p.58-60

1990

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Microwave performance of pulse-doped-heterostructure GaInAs MESFETs

Electronics letters, 1988-01, Vol.24 (2), p.93-94

1988

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Microwave performance of pulse-doped-heterostructure GalnAs MESFETs

Electronics letters, 1988-01, Vol.24, p.93

1988

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High-current pulse-doped GaInAs MESFET

Electronics letters, 1988-04, Vol.24 (8), p.498-499

1988

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Trajectory domains in a wide-well double-barrier tunneling structure in crossed electric and magnetic fields

Applied physics letters, 1990-04, Vol.56 (18), p.1772-1774

1990

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Submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxy

Applied physics letters, 1989-03, Vol.54 (12), p.1136-1138

1989

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DC and RF characteristics of doped multichannel AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As field effect transistors with variable gate-lengths

IEEE electron device letters, 2001-01, Vol.22 (1), p.5-7

2001

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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures

Molecular beam epitaxy control and photoluminescence properties of InAsBi

Background and interface electron populations in InAs0.58Sb0.42

Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices

Dual-side Processed demultiplexer using grating-assisted codirectional coupler

Structural and luminescent properties of bulk InAsSb

Background and interface electron populations in InAs 0.58 Sb 0.42

Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors

Lesser Scaup diets during migration and winter in the Mississippi flyway

Effect of barrier material on the two-dimensional electron gas in δ-doped GaInAs-based quantum wells

Multi-use, low SWaP, ultra-sensitive photoreceiver arrays for ladar & remote sensing

Monolithic photoreceiver technology for free space optical networks

High-performance InAlAs/InGaAs HEMTs and MESFETs

Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device

InAlAs/InGaAs heterojunction bipolar transistors with AlAs etch-stop layer

Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

Diets of Lesser Scaup Breeding in Manitoba (Dieta de Individuos de Aythya Affinis que se Están Reproduciendo)

Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results

Microwave performance of pulse-doped-heterostructure GaInAs MESFETs

Microwave performance of pulse-doped-heterostructure GalnAs MESFETs

High-current pulse-doped GaInAs MESFET

Trajectory domains in a wide-well double-barrier tunneling structure in crossed electric and magnetic fields

Submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxy

DC and RF characteristics of doped multichannel AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As field effect transistors with variable gate-lengths

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