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Infrared Photodetectors in Heterostructure Nanowires

Nano letters, 2006-02, Vol.6 (2), p.229-232

2006

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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core–Shell Nanowires

Nano letters, 2019-04, Vol.19 (4), p.2674-2681

2019

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Temperature effect on single chain MEH-PPV spectra

Chemical physics letters, 2004-04, Vol.388 (1), p.40-45

2004

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Random telegraph noise in photoluminescence from individual self-assembled quantum dots

Physical review. B, Condensed matter, 1999-04, Vol.59 (16), p.10725-10729

1999

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Excited states of individual quantum dots studied by photoluminescence spectroscopy

Applied physics letters, 1996-08, Vol.69 (6), p.749-751

1996

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GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopy

Review of scientific instruments, 2019-10, Vol.90 (10)

2019

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Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy

Journal of applied physics, 2007-06, Vol.101 (12)

2007

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Band filling at low optical power density in semiconductor dots

Applied physics letters, 1995-09, Vol.67 (13), p.1905-1907

1995

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Fundamental limits to force detection using quartz tuning forks

Review of scientific instruments, 2000-07, Vol.71 (7), p.2776-2780

2000

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Optical Interference from Pairs and Arrays of Nanowires

Nano letters, 2006-04, Vol.6 (4), p.862-865

2006

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Electron accumulation in single InP quantum dots observed by photoluminescence

Physical review. B, Condensed matter, 2001-12, Vol.64 (23), Article 233308

2001

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Cathodoluminescence investigations of three-dimensional island formation in InAs/InP quantum wells

Journal of crystal growth, 1995-01, Vol.147 (1-2), p.27-34

1995

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Measurements of the band gap of wurtzite InAs 1 − x P x nanowires using photocurrent spectroscopy

Journal of applied physics, 2007-06, Vol.101 (12), p.123701-123701-4

2007

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STM-based luminescence spectroscopy on single quantum dots

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-12, Vol.42 (1), p.82-87

1996

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Assembling strained InAs islands by chemical beam epitaxy

Solid-state electronics, 1996, Vol.40 (1), p.609-614

1996

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Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy

Applied physics letters, 1996-04, Vol.68 (16), p.2228-2230

1996

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Charging control of InP ∕ GaInP quantum dots by heterostructure design

Applied physics letters, 2004-11, Vol.85 (21), p.5043-5045

2004

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Band-filling in InP dots: Single dot spectroscopy and carrier dynamics

Solid-state electronics, 1996, Vol.40 (1), p.357-361

1996

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Optical characterization of quantum wires and quantum dots

Physica status solidi. A, Applied research, 1995-11, Vol.152 (1), p.269-280

1995

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Spectroscopic studies of ultra-thin quantum-wells of GaAs and GaInAs in InP grown by MOVPE

Solid-state electronics, 1994, Vol.37 (4), p.899-904

1994

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On-wafer photoacid determination and imaging technique for chemically amplified photoresists

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-11, Vol.16 (6), p.3767-3772

1998

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On-wafer spectrofluorometric evaluation of the response of photoacid generator compounds in chemically amplified photoresists

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-01, Vol.18 (1), p.136-139

2000

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Formation of interface layers in Ga sub x In sub 1 sub - sub x As /InP heterostructures: a reevaluation using ultrathin quantum wells as a probe

Journal of applied physics, 1994-01, Vol.75 (3), p.1501-1510

1994

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Nano-optical studies of individual nanostructures

Japanese Journal of Applied Physics, 1995, Vol.34 (8B), p.4392-4397

1995

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Optical and theoretical investigations of small InP quantum dots in GaxIn1-xP

Physical review. B, Condensed matter and materials physics, 2003-01, Vol.67 (3)

2003

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Infrared Photodetectors in Heterostructure Nanowires

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core–Shell Nanowires

Temperature effect on single chain MEH-PPV spectra

Random telegraph noise in photoluminescence from individual self-assembled quantum dots

Excited states of individual quantum dots studied by photoluminescence spectroscopy

GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopy

Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy

Band filling at low optical power density in semiconductor dots

Fundamental limits to force detection using quartz tuning forks

Optical Interference from Pairs and Arrays of Nanowires

Electron accumulation in single InP quantum dots observed by photoluminescence

Cathodoluminescence investigations of three-dimensional island formation in InAs/InP quantum wells

Measurements of the band gap of wurtzite InAs 1 − x P x nanowires using photocurrent spectroscopy

STM-based luminescence spectroscopy on single quantum dots

Assembling strained InAs islands by chemical beam epitaxy

Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy

Charging control of InP ∕ GaInP quantum dots by heterostructure design

Band-filling in InP dots: Single dot spectroscopy and carrier dynamics

Optical characterization of quantum wires and quantum dots

Spectroscopic studies of ultra-thin quantum-wells of GaAs and GaInAs in InP grown by MOVPE

On-wafer photoacid determination and imaging technique for chemically amplified photoresists

On-wafer spectrofluorometric evaluation of the response of photoacid generator compounds in chemically amplified photoresists

Formation of interface layers in Ga sub x In sub 1 sub - sub x As /InP heterostructures: a reevaluation using ultrathin quantum wells as a probe

Nano-optical studies of individual nanostructures

Optical and theoretical investigations of small InP quantum dots in GaxIn1-xP

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