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American Exceptionalism? Similarities and Differences in National Attitudes Toward Energy Policy and Global Warming

Environmental science & technology, 2006-04, Vol.40 (7), p.2093-2098

2006

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Representing energy technologies in top-down economic models using bottom-up information

Energy economics, 2004-07, Vol.26 (4), p.685-707

2004

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What future for carbon capture and sequestration?

Environmental science & technology, 2001-04, Vol.35 (7), p.148A-153A

HERZOG, Howard J

2001

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Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

Applied physics letters, 2000-06, Vol.76 (24), p.3552-3554

2000

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Relaxed SiGe buffers with thicknesses below 0.1 μm

Thin solid films, 2000-07, Vol.369 (1-2), p.152-156

2000

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The LITFASS project of DWD and the LITFASS-98 experiment: The project strategy and the experimental setup

Theoretical and applied climatology, 2002-01, Vol.73 (1-2), p.3-18

2002

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High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

Applied physics letters, 2000-06, Vol.76 (26), p.3920-3922

2000

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Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Journal of applied physics, 2002-10, Vol.92 (8), p.4290-4295

2002

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LLM - a nonhydrostatic model applied to high-resolving simulations of turbulent fluxes over heterogeneous terrain

Theoretical and applied climatology, 2002-01, Vol.73 (1-2), p.67-86

2002

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Developing a set of regulatory analogs for carbon sequestration

Energy (Oxford), 2004-07, Vol.29 (9), p.1561-1570

2004

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Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Solid-state electronics, 2004-08, Vol.48 (8), p.1317-1323

2004

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Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

IEEE electron device letters, 2002-08, Vol.23 (8), p.485-487

2002

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IEEE_Xplore

Microwave noise performance and modeling of SiGe-based HFETs

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2409-2415

2005

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IEEE_Xplore

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

Solid-state electronics, 2007-03, Vol.51 (3), p.449-459

2007

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High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

Semiconductor science and technology, 1992-02, Vol.7 (2), p.260-266

1992

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Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Applied physics letters, 2004-01, Vol.84 (4), p.610-612

2004

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Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications

Thin solid films, 1998-12, Vol.336 (1-2), p.141-144

1998

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SiGe-based FETs: buffer issues and device results

Thin solid films, 2000-12, Vol.380 (1), p.36-41

2000

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Microwave performances of silicon heterostructure-FETs

Applied surface science, 2004-03, Vol.224 (1), p.370-376

2004

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Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Journal of applied physics, 2004-08, Vol.96 (3), p.1745-1747

2004

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Thin SiGe buffers with high Ge content for n-MOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.341-345

2002

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Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.29-34

1999

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Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers

Applied physics letters, 1992-04, Vol.60 (14), p.1729-1731

1992

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Alternatives to thick MBE-grown relaxed SiGe buffers

Thin solid films, 2000-07, Vol.369 (1-2), p.148-151

2000

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SiGe/Si hetero-field-effect-transistor with PN-junction gate

Thin solid films, 2000-12, Vol.380 (1), p.204-206

2000

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American Exceptionalism? Similarities and Differences in National Attitudes Toward Energy Policy and Global Warming

Representing energy technologies in top-down economic models using bottom-up information

What future for carbon capture and sequestration?

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

Relaxed SiGe buffers with thicknesses below 0.1 μm

The LITFASS project of DWD and the LITFASS-98 experiment: The project strategy and the experimental setup

High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

LLM - a nonhydrostatic model applied to high-resolving simulations of turbulent fluxes over heterogeneous terrain

Developing a set of regulatory analogs for carbon sequestration

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

Microwave noise performance and modeling of SiGe-based HFETs

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications

SiGe-based FETs: buffer issues and device results

Microwave performances of silicon heterostructure-FETs

Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation

Thin SiGe buffers with high Ge content for n-MOSFETs

Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers

Alternatives to thick MBE-grown relaxed SiGe buffers

SiGe/Si hetero-field-effect-transistor with PN-junction gate

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