UB Paderborn / Katalog / Suche / in CDI

First stages of the MBE growth of InAs on (001)GaAs

Journal of crystal growth, 1987-02, Vol.81 (1), p.67-72

1987

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Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy

Journal of applied physics, 1987, Vol.61 (1), p.215-219

1987

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Comparison of crystal orientation dependence for the solid phase epitaxial process in ion implanted Si and GaAs

Applied physics letters, 1986-05, Vol.48 (21), p.1441-1443

1986

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Scanning electron microscopy investigations of the initial degradation mechanism of GaAs quantum well lasers grown on silicon substrates

Journal of applied physics, 1990-08, Vol.68 (3), p.937-942

1990

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A model for the degradation of Ga(Al)As single-quantum-well lasers

Journal of applied physics, 1991-07, Vol.70 (2), p.554-561

1991

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Synthesis and microstructural studies of Er3+-doped fluorozirconate devitrified glasses

Journal of non-crystalline solids, 1993-08, Vol.161, p.70-76

1993

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Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature

Journal of applied physics, 1982-09, Vol.53 (9), p.6202-6207

1982

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Electron beam-induced current in direct band-gap semiconductors

Journal of applied physics, 1981-01, Vol.52 (12), p.7245-7250

1981

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Luminescence in highly conductive n -type ZnSe

Journal of applied physics, 1975-08, Vol.46 (8), p.3549-3555

1975

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Study of buried silicon nitride layers synthesized by ion implantation

Journal of applied physics, 1980-12, Vol.51 (12), p.6169-6175

1980

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Reaction kinetics of molybdenum thin films on silicon (111) surface

Journal of applied physics, 1978-01, Vol.49 (1), p.233-237

1978

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Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition

Thin solid films, 1978-12, Vol.55 (3), p.375-386

1978

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Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

Journal of applied physics, 1988-01, Vol.63 (2), p.400-403

1988

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Evaluation and measurement of changes in intensity of the characteristic lines and background of Auger electron spectra due to crystalline effects. Application to an aluminium target bombarded with electrons

Surface and interface analysis, 1990-01, Vol.15 (1), p.7-14

1990

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Solid phase epitaxial regrowth of ion-implanted amorphized InP

Applied physics letters, 1986-08, Vol.49 (6), p.316-318

1986

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SEM direct observation of the degradation in Ga(Al)As grin-SCH lasers grown on a silicon substrate

Electronics letters, 1990, Vol.26 (7), p.448-450

1990

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On the formation of binary compounds in Au/InP system

Journal of applied physics, 1981-01, Vol.52 (8), p.5112-5117

1981

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Impurity segregation during explosive crystallization of amorphous silicon

Journal of applied physics, 1983-06, Vol.54 (6), p.3485-3488

1983

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Flash lamp crystallization of amorphous silicon films on glass substrates

Thin solid films, 1984-01, Vol.117 (2), p.117-123

1984

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Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers

Applied physics letters, 1981-01, Vol.39 (1), p.49-51

1981

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MBE growth of AlxGayIn1−x−yAs for a DHBT structure

Journal of crystal growth, 1987-02, Vol.81 (1-4), p.396-399

1987

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Phagocytosis by cells of the pulmonary alveoli. Transformation of crystalline particles

The American journal of pathology, 1978-10, Vol.93 (1), p.27-44

1978

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Influence of cw laser scan speed in solid-phase crystallization of amorphous Si film on Si3N4/glass substrate

Applied physics letters, 1981-01, Vol.38 (8), p.613-615

1981

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Metallurgical and electrical properties of chromium silicon interfaces

Solid-state electronics, 1980, Vol.23 (1), p.55-64

1980

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Molybdenum germanide ohmic contact to n-GaAs

Electronics letters, 1987, Vol.23 (1), p.17-18

1987

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First stages of the MBE growth of InAs on (001)GaAs

Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy

Comparison of crystal orientation dependence for the solid phase epitaxial process in ion implanted Si and GaAs

Scanning electron microscopy investigations of the initial degradation mechanism of GaAs quantum well lasers grown on silicon substrates

A model for the degradation of Ga(Al)As single-quantum-well lasers

Synthesis and microstructural studies of Er3+-doped fluorozirconate devitrified glasses

Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature

Electron beam-induced current in direct band-gap semiconductors

Luminescence in highly conductive n -type ZnSe

Study of buried silicon nitride layers synthesized by ion implantation

Reaction kinetics of molybdenum thin films on silicon (111) surface

Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition

Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

Evaluation and measurement of changes in intensity of the characteristic lines and background of Auger electron spectra due to crystalline effects. Application to an aluminium target bombarded with electrons

Solid phase epitaxial regrowth of ion-implanted amorphized InP

SEM direct observation of the degradation in Ga(Al)As grin-SCH lasers grown on a silicon substrate

On the formation of binary compounds in Au/InP system

Impurity segregation during explosive crystallization of amorphous silicon

Flash lamp crystallization of amorphous silicon films on glass substrates

Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers

MBE growth of AlxGayIn1−x−yAs for a DHBT structure

Phagocytosis by cells of the pulmonary alveoli. Transformation of crystalline particles

Influence of cw laser scan speed in solid-phase crystallization of amorphous Si film on Si3N4/glass substrate

Metallurgical and electrical properties of chromium silicon interfaces

Molybdenum germanide ohmic contact to n-GaAs

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