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Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

New journal of physics, 2007-10, Vol.9 (10), p.389-389

2007

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Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

Applied physics letters, 2007-01, Vol.90 (2), p.022105-022105-3

2007

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MOVPE growth of GaN on Si – Substrates and strain

Thin solid films, 2007-03, Vol.515 (10), p.4356-4361

2007

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Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate

Journal of applied physics, 2007-02, Vol.101 (3)

2007

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Improving GaN-on-silicon properties for GaN device epitaxy

Physica status solidi. C, 2011-05, Vol.8 (5), p.1503-1508

2011

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Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Journal of crystal growth, 2015-03, Vol.414, p.105-109

2015

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On the growth mechanism and optical properties of ZnO multi-layer nanosheets

Applied physics. A, Materials science & processing, 2004-12, Vol.79 (8), p.1895-1900

2004

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Reduction of stress at the initial stages of GaN growth on Si(111)

Applied physics letters, 2003-01, Vol.82 (1), p.28-30

2003

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Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering

Applied physics letters, 2010-11, Vol.97 (18), p.181105-181105-3

2010

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Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

Journal of crystal growth, 2007-10, Vol.308 (1), p.170-175

2007

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MOVPE growth of high-quality AlN

Journal of crystal growth, 2006-12, Vol.297 (2), p.306-310

2006

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The case for using the repeatability coefficient when calculating test-retest reliability

PloS one, 2013-09, Vol.8 (9), p.e73990-e73990

2013

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In situ monitoring of the stress evolution in growing group-III-nitride layers

Journal of crystal growth, 2005-02, Vol.275 (1), p.209-216

2005

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Growth of single-domain GaN layers on Si(0 0 1) by metalorganic vapor-phase epitaxy

Journal of crystal growth, 2006-04, Vol.289 (2), p.485-488

2006

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Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile

Applied physics letters, 2004-10, Vol.85 (16), p.3441-3443

2004

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Optical and structural microanalysis of GaN grown on SiN submonolayers

Journal of applied physics, 2006-06, Vol.99 (12), p.123518-123518-8

2006

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Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains

Applied physics letters, 2010-04, Vol.96 (17)

2010

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Self-guided psychological treatment for depressive symptoms: a meta-analysis

PloS one, 2011-06, Vol.6 (6), p.e21274-e21274

2011

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Stranski–Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014041

2011

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Experimental cathodoluminescence studies of exciton transport in gallium nitride

Bulletin of the Russian Academy of Sciences. Physics, 2012-09, Vol.76 (9), p.970-973

2012

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Does ownership matter? An overview of systematic reviews of the performance of private for-profit, private not-for-profit and public healthcare providers

PloS one, 2014-12, Vol.9 (12), p.e93456-e93456

2014

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Can team-based care improve patient satisfaction? A systematic review of randomized controlled trials

PloS one, 2014-07, Vol.9 (7), p.e100603-e100603

2014

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Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(0 0 1) substrates

Journal of crystal growth, 2007-02, Vol.299 (2), p.399-403

2007

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Small-molecule library screening by docking with PyRx

Methods in molecular biology (Clifton, N.J.), 2015, Vol.1263, p.243

2015

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Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

MOVPE growth of GaN on Si – Substrates and strain

Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate

Improving GaN-on-silicon properties for GaN device epitaxy

Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

On the growth mechanism and optical properties of ZnO multi-layer nanosheets

Reduction of stress at the initial stages of GaN growth on Si(111)

Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering

Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

MOVPE growth of high-quality AlN

The case for using the repeatability coefficient when calculating test-retest reliability

In situ monitoring of the stress evolution in growing group-III-nitride layers

Growth of single-domain GaN layers on Si(0 0 1) by metalorganic vapor-phase epitaxy

Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile

Optical and structural microanalysis of GaN grown on SiN submonolayers

Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains

Self-guided psychological treatment for depressive symptoms: a meta-analysis

Stranski–Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures

Experimental cathodoluminescence studies of exciton transport in gallium nitride

Does ownership matter? An overview of systematic reviews of the performance of private for-profit, private not-for-profit and public healthcare providers

Can team-based care improve patient satisfaction? A systematic review of randomized controlled trials

Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(0 0 1) substrates

Small-molecule library screening by docking with PyRx

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