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Effect of fluorine implantation dose on boron thermal diffusion in silicon

Journal of applied physics, 2004-10, Vol.96 (8), p.4114-4121

2004

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Physica status solidi: March 16

Görlich

2021

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Physica status solidi: Volume 12, Number 1 July 16

Görlich

2021

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Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

Journal of applied physics, 2002-12, Vol.92 (11), p.6924-6926

2002

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Comparison of arsenic diffusion in Si1−xGex formed by epitaxy and Ge+ implantation

Journal of applied physics, 2003-04, Vol.93 (8), p.4526-4528

2003

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Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers

Journal of applied physics, 1999-01, Vol.85 (1), p.168-173

1999

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Electrical and materials characterization of GSMBE grown Si1−x−yGexCy layers for heterojunction bipolar transistor applications

Semiconductor science and technology, 2005-01, Vol.20 (1), p.95-102

2005

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SiC buried layer formation by ion beam synthesis at 950 °C

Applied physics letters, 1995-05, Vol.66 (20), p.2646-2648

1995

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Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy

Solid-state electronics, 2005-04, Vol.49 (4), p.529-534

2005

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Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.35-42

1999

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Study of Cu gettering to cavities in separation by implantation of oxygen substrates

Applied physics letters, 1998-02, Vol.72 (7), p.830-832

1998

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High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing

Applied physics letters, 1986-02, Vol.48 (8), p.532-534

1986

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Kinetics of wet oxidation at 1000 °C of Si0.5Ge0.5 relaxed alloy

Semiconductor science and technology, 1999-05, Vol.14 (5), p.484-487

1999

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Analysis of thin-film silicon-on-insulator structures formed by low-energy oxygen ion implantation

Journal of applied physics, 1991-10, Vol.70 (7), p.3605-3612

1991

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Mechanism of buried β-SiC formation by implanted carbon in silicon

Thin solid films, 1990-10, Vol.191 (1), p.147-164

1990

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Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers

Journal of luminescence, 1998-12, Vol.80 (1), p.269-273

1998

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SiGe HBTs on bonded SOI incorporating buried silicide layers

IEEE transactions on electron devices, 2005-03, Vol.52 (3), p.317-324

2005

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Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance

Solid-state electronics, 2004-04, Vol.48 (4), p.511-519

2004

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Recombination processes in erbium-doped MBE silicon

Semiconductor science and technology, 1993-02, Vol.8 (2), p.236-242

1993

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Optical investigation of structures formed by 2 MeV oxygen implantation into silicon

Thin solid films, 1996-11, Vol.289 (1), p.90-94

1996

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Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon

Journal of applied physics, 1995-01, Vol.77 (2), p.577-586

1995

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Formation and characterization of Si/SiO2 multilayer structures by oxygen ion implantation into silicon

Journal of applied physics, 1996-11, Vol.80 (9), p.4960-4970

1996

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Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation

IEEE transactions on electron devices, 2003-06, Vol.50 (6), p.1487-1493

2003

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MeV H+ and He+ Irradiations of Arsenic Diffused Layers in Silicon

March 16, 2021, Vol.46, Number 1, p.225-232

2021

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Non-selective growth of SiGe heterojunction bipolar trasistor[transistor] layers at 700°C with dual control of n- and p-type dopant profiles

Journal of materials science. Materials in electronics, 2003-05, Vol.14 (5-7), p.261-265

2003

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Effect of fluorine implantation dose on boron thermal diffusion in silicon

Physica status solidi: March 16

Physica status solidi: Volume 12, Number 1 July 16

Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

Comparison of arsenic diffusion in Si1−xGex formed by epitaxy and Ge+ implantation

Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers

Electrical and materials characterization of GSMBE grown Si1−x−yGexCy layers for heterojunction bipolar transistor applications

SiC buried layer formation by ion beam synthesis at 950 °C

Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy

Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys

Study of Cu gettering to cavities in separation by implantation of oxygen substrates

High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing

Kinetics of wet oxidation at 1000 °C of Si0.5Ge0.5 relaxed alloy

Analysis of thin-film silicon-on-insulator structures formed by low-energy oxygen ion implantation

Mechanism of buried β-SiC formation by implanted carbon in silicon

Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers

SiGe HBTs on bonded SOI incorporating buried silicide layers

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance

Recombination processes in erbium-doped MBE silicon

Optical investigation of structures formed by 2 MeV oxygen implantation into silicon

Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon

Formation and characterization of Si/SiO2 multilayer structures by oxygen ion implantation into silicon

Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation

MeV H+ and He+ Irradiations of Arsenic Diffused Layers in Silicon

Non-selective growth of SiGe heterojunction bipolar trasistor[transistor] layers at 700°C with dual control of n- and p-type dopant profiles

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